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    TRANSISTOR CR Search Results

    TRANSISTOR CR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR CR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS


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    BU806/807 BU806 BU807 BU806 PDF

    BU806..807

    Abstract: BU806 BU807
    Contextual Info: BU806/807 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110°° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS


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    BU806/807 O-220 BU806 BU807 BU806..807 BU806 BU807 PDF

    Contextual Info: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.


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    BU406 BU406 O-220 QW-R203-021 PDF

    Contextual Info: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.


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    BU406 BU406 O-220 QW-R203-021 PDF

    Contextual Info: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.


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    BU406 BU406 O-220 500mA 500mA, QW-R203-021 PDF

    Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR BU806/807 FAST SWITCHING DARLINGTON TRANSISTOR HIGH VOLTAGE DARLINGTON TRANSISTOR USING IN HORIZONTAL OUTPUT STAGES OF 110° CRT VIDEO DISPLAYS TO-220 BUILT-IN SPEED-UP Diode Between Base and Emitter ABSOLUTE MAXIMUM RATINGS Ta=25°C


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    BU806/807 O-220 BU806 BU807 00201bS PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BU406 NPN PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR „ DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110°C CRT.


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    BU406 BU406 BU406L-x-TA3-T BU406G-x-TA3-T BU406L-x-TF1-T BU406G-x-TF1-T BU406L-x-TF3-T BU406G-x-TF3-T BU406L-x-T3P-T BU406G-x-T3P-T PDF

    Contextual Info: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling


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    O-340-T O-340-G O-34O0-T T0-360-T 852-26904858-Fax: PDF

    transistor sc 308

    Abstract: DTA143EE SMD310
    Contextual Info: DTA143EE Product Preview Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    DTA143EE DTA143EE 416/SC r14525 DTA143EE/D transistor sc 308 SMD310 PDF

    supersot 6 TE

    Abstract: Supersot 6
    Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor


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    FMB1020 300mA. 100uA 100mA 150mA 100MHz 100uA, 200mA, supersot 6 TE Supersot 6 PDF

    DTC114TE

    Abstract: SMD310 motorola DTC114TE
    Contextual Info: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a


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    DTC114TE/D DTC114TE 416/SC DTC114TE/D* DTC114TE SMD310 motorola DTC114TE PDF

    transistor sc 308

    Abstract: DTC114TE SMD310
    Contextual Info: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310 PDF

    BUX45

    Abstract: transistor et 460
    Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection


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    CB-19 BUX45 transistor et 460 PDF

    DTC114YE

    Abstract: SMD310 motorola DTC114YE
    Contextual Info: MOTOROLA Order this document by DTC114YE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a


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    DTC114YE/D DTC114YE 416/SC DTC114YE/D* DTC114YE SMD310 motorola DTC114YE PDF

    DTA143EE

    Abstract: SMD310 43 DTA143EE
    Contextual Info: MOTOROLA Order this document by DTA143EE/D SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


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    DTA143EE/D DTA143EE 416/SC DTA143EE/D* DTA143EE SMD310 43 DTA143EE PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


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    2SC3603 2SC3603 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise


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    2SC3587 PDF

    DTA114YE

    Abstract: SMD310
    Contextual Info: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


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    DTA114YE/D DTA114YE 416/SC DTA114YE/D* DTA114YE SMD310 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


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    2SD2403 2SD2403 2SB1572 PDF

    FC155

    Contextual Info: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one


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    EN5063 FC155 FC155] FC155 PDF

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


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    2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150 PDF

    2SC2150

    Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


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    2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X PDF

    PT 4304 a transistor

    Abstract: 2SC3587 noise diode
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise


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    2SC3587 2SC3587 PT 4304 a transistor noise diode PDF

    97CC

    Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
    Contextual Info: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection


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    CB-19 97CC transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18 PDF