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    TRANSISTOR CR Search Results

    TRANSISTOR CR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR CR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.


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    BU406 BU406 O-220 QW-R203-021 PDF

    Contextual Info: UTC BU406 NPN EXPITAXIAL PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTION The UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110° CRT.


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    BU406 BU406 O-220 QW-R203-021 PDF

    DTC114TE

    Abstract: SMD310 motorola DTC114TE
    Contextual Info: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a


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    DTC114TE/D DTC114TE 416/SC DTC114TE/D* DTC114TE SMD310 motorola DTC114TE PDF

    transistor sc 308

    Abstract: DTC114TE SMD310
    Contextual Info: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310 PDF

    DTA114YE

    Abstract: SMD310
    Contextual Info: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


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    DTA114YE/D DTA114YE 416/SC DTA114YE/D* DTA114YE SMD310 PDF

    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


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    2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500 PDF

    transistor BUX

    Abstract: BUX14 TR07
    Contextual Info: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection


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    BUX14 CB-19 transistor BUX BUX14 TR07 PDF

    Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


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    NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D PDF

    N5 npn transistor

    Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
    Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


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    NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6 PDF

    Contextual Info: CRO BFX48 PNP SILICON TRANSISTOR DESCRIPTION BFX48 is PNP silicon transistor designed for general purpose, saturated switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous


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    BFX48 BFX48 100mA 360mW 100MHz 300/xS, Jan-97 PDF

    TO92A

    Contextual Info: CRO PN3565 PNP SILICON TRANSISTOR TO-92A DESCRIPTION PN3565 is PNP silicon planar transistor designed for AF small signal amplifier stages. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


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    PN3565 O-92A PN3565 300mW 100/uA Sep-96 TO92A PDF

    transistor D 2578

    Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting


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    BLW90 SC08a transistor D 2578 BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook PDF

    Contextual Info: Ordering number:EN5099 FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features Package Dimensions • Composite type with NPN transistor and a PNP transistor contained in the conventional CP package,


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    EN5099 FC154 FC154 2SC4270 2SA1699, FC154] PDF

    BLX94C

    Abstract: MBH100 BLX94
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended


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    BLX94C OT122A OT122A BLX94C MBH100 BLX94 PDF

    Contextual Info: BF550 _ SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection application:;. •


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    BF550 PDF

    marking code e2

    Abstract: BF547W transistor with marking 4266 "MARKING CODE E2" TRANSISTOR S 813 BF547 equivalent transistor A 2497 marking 28 SOT323 vhf MA 0253 000
    Contextual Info: Product specification Philips Semiconductors NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION • Stable oscillator operation • Good thermal stability. Silicon NPN transistor in a plastic SOT323 S-mini package. The BF547W uses the same crystal as the


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    BF547W OT323 BF547W BF547. 711DflSh 07M3UD marking code e2 transistor with marking 4266 "MARKING CODE E2" TRANSISTOR S 813 BF547 equivalent transistor A 2497 marking 28 SOT323 vhf MA 0253 000 PDF

    RN1110FS

    Abstract: RN1111FS RN2110FS RN2111FS
    Contextual Info: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


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    RN1110FS RN1111FS RN1110FS, RN2110FS, RN2111FS RN1111FS RN2110FS RN2111FS PDF

    Contextual Info: CRO CL117 NPN SILICON TRANSISTOR TO-92F LEAD FORM to MELF-002 DESCRIPTION CL117 is NPN silicon planar transistor designed for general purpose high voltage and video amplifier application. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage


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    CL117 O-92F MELF-002) CL117 100mA 625mW 300/iS, Jul-98 PDF

    Philips 4312 020

    Abstract: blv75
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


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    BLV75/12 OT-119) Philips 4312 020 blv75 PDF

    mda324

    Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in


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    BLU30/12 OT-119) mda324 MDA325 transistor D 2395 4313-020-15170 MDA327 PDF

    TRANSISTOR GENERAL DIGITAL L6

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor


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    BFG35 OT223 BFG35 MSB002 OT223. R77/03/pp14 771-BFG35-T/R TRANSISTOR GENERAL DIGITAL L6 PDF

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Contextual Info: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


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    RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS RN1113FS RN2112FS RN2113FS PDF

    Contextual Info: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


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    RN49A6FS PDF

    RN4993FS

    Contextual Info: RN4993FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4993FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


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    RN4993FS RN4993FS PDF