TRANSISTOR COMMON EMITTER CONFIGURATION Search Results

c 1685 transistor

Abstract: 1685 transistor transistor c 1685 1615mhz PH1617-60
Contextual Info: Wireless Power Transistor, 60 Watts, 1615 - 1685 MHz PH1617-60 PH1617-60 Wireless Power Transistor 60 Watts, 1615 - 1685 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Emitter Configuration Diffused Emitter Ballasting Resistors

Contextual Info: CA3081, CA3082 Semiconductor September 1998 General Purpose High Current NPN Transistor Arrays 480.4 Features • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter

ca3081

Abstract: ca3082 common collector npn array transistor Common collector configuration F16 DIODE 3082
Contextual Info: 33 CA3081, CA3082 ^ «f ":.l! ; General Purpose High Current NPN Transistor Arrays " Features Description • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter

F300

Contextual Info: CW Power Transistor A fa PH0303-8 8.0 Watts, 300-325 MHz Features • • • • • • • Outline Drawing NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation Diffused Emitter Ballasting Resistors Gold Metallization System

100 N 37

Contextual Info: CW Power Transistor PH0303-37 37 Watts, 300-325 MHz Features Outline Drawing • NPN Silicon Power Transistor • Common Emitter Configuration • Class AB Linear Operation • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input Impedance Matching

Contextual Info: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system

transistor f20

Contextual Info: Aß Oscillator Power Transistor PH2022-1OSC 1 Watt, 2.00-2.20 GHz Outline Drawing Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Emitter Configuration Designed for S-Band Applications Interdigitated Geometry Diffused Emitter Ballasting Resistors

13MM

Abstract: 817j18
Contextual Info: I .-em _- an AMP company Linear Power Transistor, 40W 850 - 1450 MHz Features l l l l l l l l NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System

transistor Common emitter configuration

Abstract: PH1617-60
Contextual Info: PH1617-60 Wireless Power Transistor 60W, 1615-1685 MHz M/A-COM Products Released, 05 Sep 07 Package Outline Features • • • • • • • NPN Silicon microwave power transistor Common emitter configuration Diffused emitter ballasting resistors Gold metallization system

MS1409

Contextual Info: MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS Features • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high

vp 3082

Abstract: CA3081 CA3082
Contextual Info: CA3081, CA3082 M A ßE»» General Purpose High Current NPN Transistor Arrays November 1996 Features D escription • CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter

ARC-182

Abstract: transistor Common emitter configuration PHOI
Contextual Info: an AMP company CW Power Transistor, 30 - 400 MHz 85W PHOI 04-85 v2.00 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 85 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Proven in Thousands of ARC-182 Airborne Radios

ARC-182

Abstract: transistor Common emitter configuration transistor t 04 27 PHOI an/ARC-182
Contextual Info: an AMP company CW Power Transistor, 30 - 400 MHz 16W PHOI 04-I 6 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 16 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Prqqn in Thousands of ARC-182 Airborne Radios

13MM

Abstract: PH3134-2OL transistor f20 PH3134
Contextual Info: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

PH0810-15

Contextual Info: PH0810-15 Wireless Power Transistor 15W, 850-960MHz, 26V Features • Designed for linear amplifier applications • Class AB: -30 dBc typ. 3rd IMD at 15 W PEP • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

TRANSISTOR Z4

Contextual Info: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

Contextual Info: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors

PH1214-2M

Abstract: .15 j63 1.5 j63 1035 transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

J37 transistor

Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
Contextual Info: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors

13MM

Abstract: PH1214-4M
Contextual Info: =7 an AMP comDanv = E Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty PH1214-4M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

MS1409

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS Features • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter

7107 ic

Abstract: 7107 7107 datasheet 7107 GP IC 7107 MS1649
Contextual Info: MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features • • • • 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: TO-39 The MS1649 is a 12.5V epitaxial NPN planar transistor

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS )HDWXUHV • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter