TRANSISTOR COMMON BASE CONNECTION Search Results

Contextual Info: EMC5DXV5T1, EMC5DXV5T5 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with

Contextual Info: EMC2DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with

EMC3DXV5T5

Contextual Info: EMC3DXV5T1, EMC3DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with

marking u5

Contextual Info: EMC5DXV5T1, EMC5DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with

SMD310

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with

free transistor equivalent book

Abstract: RESISTOR footprint dimension all ic datasheet in one pdf file ic 4000 Aluminium Housed high Power Resistor high gain low voltage PNP transistor transistor equivalent table transistor equivalent book 1000 volt pnp transistor network resistor
Contextual Info: EMC2DXV5T1, EMC3DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 2 R1 The BRT Bias Resistor Transistor contains a single transistor with

UMC3NT1

Abstract: SMD310
Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with

Contextual Info: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with

norton amplifier

Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
Contextual Info: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output

SMD310

Abstract: SOT353 U1
Contextual Info: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbS3T31 DDETISS OES BLV94 Jl IAPX UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz communication band. Features

HFA08TA60C

Contextual Info: HFA08TA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 4 A FEATURES • • • • • • • Base Common Cathode • • • • • Anode 2 1 Common 3 Cathode RoHS* COMPLIANT Reduced RFI and EMI Reduced power loss in diode and switching transistor

M142

Abstract: SD1414-12
Contextual Info: SD1414-12  RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS PRELIMINARY DATA • ■ ■ ■ 960 MHz 13.5 VOLTS COMMON BASE POUT = 40 W MIN. WITH 4.3 dB gain DESCRIPTION The SD1414-12 is a 13.5 V Class C Epitaxial silicon NPN planar transistor designed for

SD1897

Contextual Info: SD1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS . . . 1.65 GHz 28 VOLTS CLASS C OPERATION COMMON BASE P OUT = 10 W MIN. WITH 11.0 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1897 BRANDING 1897 PIN CONNECTION DESCRIPTION The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz

SD1897

Contextual Info: SD1897 RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS . . . 1.65 GHz 28 VOLTS CLASS C OPERATION COMMON BASE POUT = 10 W MIN. WITH 11.0 dB GAIN .250 x .320 2LFL M170 epoxy sealed ORDER CODE SD1897 BRANDING 1897 PIN CONNECTION DESCRIPTION The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz

PS9634

Abstract: PS9634L power transistor vo1l
Contextual Info: POWER TRANSISTOR DRIVING BASE AMPLIFIER BUILT-IN TYPE OPTOCOUPLER PS9634 PS9634L FEATURES DESCRIPTION • HIGH INSTANTANEOUS COMMON MODE REJECTION VOLTAGE CMH = -1000 V/µs MIN, CML = 1000 V/µs MIN The PS9634 is an optical linkage device mounting a GaAs infrared LED on the light emitting side input side , and a

Contextual Info: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for

Contextual Info: MS2553C 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz GENERAL DESCRIPTION The MS2553C is a medium power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

TL 1838

Abstract: vs 1838 b a105 transistor TRANSISTOR a105 DS9667CN Darlington pair IC high current c 9647 transistor Deutsch Relays TL DS2003 DS9667
Contextual Info: DS2003 DS9667 DS2004 High Current Voltage Darlington Drivers General Description The DS2003 DS9667 DS2004 are comprised of seven high voltage high current NPN Darlington transistor pairs All units feature common emitter open collector outputs To maximize their effectiveness these units contain suppression diodes for inductive loads and appropriate emitter base

J154

Abstract: jmc5801 capacitor 220uF/63V RO4350 MS2553C
Contextual Info: MS2553C 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz GENERAL DESCRIPTION The MS2553C is a medium power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.

transistor j380

Abstract: J225 J22 transistor 200B AWG20 M210 MS3022 J380
Contextual Info: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for

transistor cq 529

Abstract: BLV94 sot-171 transistor zx series
Contextual Info: PHILIPS IN T E RN AT ION AL bSE D m 711GÛ5b 0Db3052 Jl 3T1 • PHIN BLV94 UHF P O W ER T R A N SIST O R NPN silicon planar epitaxial transistor prim arily intended fo r common base, class-B operation in mobile radio transmitters fo r the 900 MHz comm unication band.

KA 2717

Abstract: MDC2125
Contextual Info: b B L T E S M G l G l b S T Q7T M M O T b Order this data sheet by MDC2125/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC2125 SMALLBLOCK Products M o to ro la P referred D evice High Voltage Level Shifter This monolithic, PNP common base, high voltage transistor array is designed to