TRANSISTOR COLLECTOR EMITER BASE Search Results

MMBT3904LT1

Abstract: 9B SOT23
Contextual Info: Hnnnm SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITER FEATURES 3. COLLECTOR Power dissipation 0-2 Pcm: 2.4 W (T am b=25t) Collector current I CM: 0 .2 A Collector-base voltage 60 V Operating and storage junction temperature range

BC327

Contextual Info: BC327 TO-92 Plastic-Encapsulate Transistor s Transistor PNP TO-92 1.COLLECTOR 2.BASE 3.EMITTER 1 2 3 TYPICAL CHARACTERISTICS -1.0 -1.0 o T A =25 o C T j =25 C V BE (sat)@Ic/I B =10 -0.8 Ic=-500mA -0.6 -0.4 Ic=-300mA -0.2 V VOLTAGE(VOLTS) V CE ,COLLECTOR EMITTER VOLTAGE(VOLTS)

transistor collector emiter base

Contextual Info: 2223-1.7 1.7 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE GENERAL DESCRIPTION The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It

microwave amplifier 2.4 ghz 10 watts

Abstract: transistor Common Base amplifier
Contextual Info: 2223-1.7 1.7 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE GENERAL DESCRIPTION The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It

microwave amplifier 2.4 ghz 10 watts

Abstract: 2223 2223-9A transistor Common Base amplifier
Contextual Info: 2223-9A 9 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE 55AW, STYLE 1 GENERAL DESCRIPTION The 2223-9 is a COMMON BASE transistor capable of providing 9 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

MDS400

Contextual Info: MDS400 400 Watts Pk, 45 Volts, 32µs, 2% Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE The MDS400 is a COMMON BASE transistor capable of providing 400 Watts Peak, Pulsed, RF Output Power over the band 1030-1090 MHz. The transistor includes double input prematching for full broadband capability. Gold

9BSE55

Contextual Info: 9BSE55 55 Watts, 25 Volts CELLULAR 850-960 MHz CASE OUTLINE GENERAL DESCRIPTION The 9BSE55 is a COMMON BASE, silicon bipolar transistor capable of providing 55 watts of output power at 960 MHz. The device is designed for cellular base station applications in the 850 to 960 MHz frequency range.

C5201 transistor

Abstract: 2sc5201 c5201 25j1A
Contextual Info: 2SC5201 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5201 High-Voltage Switching Applications • High breakdown voltage: VCEO = 600 V • Low saturation voltage: VCE sat = 1.0 V (max) Unit: mm (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C)

transistor H 649A

Contextual Info: WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO

WTM2222A

Abstract: WTM2907A MARKING 2907A npn 2907A wtm290
Contextual Info: WTM2907A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER Features: 2 3 * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With NPN Type WTM2222A ABSOLUTE MAXIMUM RATINGS (TA=25˚C)

transistor 649A

Abstract: 101B WTM649A
Contextual Info: WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO

transistor 669A

Abstract: wtm669a h 669A 101B transistor marking 04
Contextual Info: WTM669A NPN Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO

transistor 669A

Abstract: h 669A wtc66 101B 669a transistor 160v 1.5a pnp
Contextual Info: WTM669A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO

Contextual Info: WTM2907A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER Features: 2 3 * Low Collector Saturation Voltage * High Spwwd Switching * For Complementary Use With NpN Type WTM2222A ABSOLUTE MAXIMUM RATINGS (TA=25˚C)

transistor collector emiter base

Abstract: NTE363
Contextual Info: NTE363 Silicon NPN Transistor RF Power Amp, PO = 4W Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: D Designed for UHF Military and Commercial Equipment D 4W Min with Greater than 8dB Gain

transistor C128

Abstract: c128 transistor 28c128 C1-28Z transistor c1-28 GHZ TECHNOLOGY C1-28 55FT
Contextual Info: C1-28/C1-28Z 1 Watts - 28 Volts, Class C Defcom 400 MHz GENERAL DESCRIPTION CASE OUTLINE The C1-28 / Z is a COMMON EMITTER transistor capable of providing1 Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This transistor is designed for Class AB or C amplifier applications. It utilizes

SQD65BB75

Abstract: sqd65B
Contextual Info: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.

2N2894

Abstract: 2n2894 transistor TRANSISTOR 533
Contextual Info: 2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS:

UTV8100B

Abstract: 55RT GHz Technology
Contextual Info: UTV8100B 100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55RT, STYLE 2 The UTV8100B is a COMMON EMITTER transistor capable of providing 100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The transistor includes double input and output prematching for full

UTV100B

Abstract: UTV100
Contextual Info: UTV100B 100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55RT, STYLE 2 The UTV100B is a COMMON EMITTER transistor capable of providing 100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz. The transistor includes double input and output prematching for full broadband

capacitor ceramic 33pF

Abstract: 1mF CAPACITOR 10pf ceramic CAPACITOR capacitors ceramic 33pF ceramic capacitor 10pf L9 transistor capacitor 10mf 10MF ELECTROLYTIC 50w rf power transistor
Contextual Info: 0204-125 125 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz CASE OUTLINE GENERAL DESCRIPTION 55JT- Style 2 The 0204-125 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

0105-50

Contextual Info: 0105-50 50 Watts, 28 Volts, Class AB Defcom 100 - 500 MHz GENERAL DESCRIPTION CASE OUTLINE The 0105-50 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

Contextual Info: 0104-100 100 Watts, 28 Volts, Class AB Defcom 100 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The 0104-100 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

s175-50

Contextual Info: S175 - 50 175 Watts, 50 Volts, Class AB Milcom 1.5 - 30 MHz CASE OUTLINE GENERAL DESCRIPTION 55HX, Style 2 The S175-50 is a 50 Volt, COMMN EMITTER device designed for Class A, AB or C operation in the HF/VHF frequency bands. Its high collector voltage simplifies the design of wideband, SSB linear amplifiers. The transistor chip is