SQD65BB75
Abstract: sqd65B
Contextual Info: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.
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sqp65bb75sqd65bb7500dee22sqd65b |
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SQD35JA160
Abstract: SQD300BA60 SQD50AB100 sqd65bb75 SQD200A40 SQD200A60 SQD35JA140 CD 300-16 IO 34 SQD300AA100 TA8250
Contextual Info: - 1 9 6 t-y y -s X ? • N P N . lfiftii • ira m ° 7 ° «* u —rh-r /u- • ? - < * - k w ° 1 0 OJÌLh (S B W S lc r) » l iL S S & g : E T 6 I 0 2 (M) a i. H m % VcBO V ebo fé c VCEX # (V ) CV) fe CP B ( T , =25*0) If (I bis) (V ) (A) CA) CA)
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5oab10h-101sqd35ja160sqd300ba60+8sqd50ab100sqd65bb75sqd200a40sqd200a60sqd35ja140cd 300-16 io 34sqd300aa100ta8250
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mosfet ir 840
Abstract: 250A darlington transistor SF200AA20 FBA50BA50 FCA75BC50 SF150AA50 sqd65bb75 FBA75BA SF150AA20 FBA75BA50
Contextual Info: SANSHA ELECTRIC liF G 37E CO l i 7 ^ ^ 1 2 4 3 «- D Ü Q O O O S 3> I I • t —y — — I M O iin r m m h S F E T S / T R rnn A i i i N i S T I S £ f 1J n I S i l i- T O R Id Voss A V Sw itching Tim e ns
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fba50ba50fca50bc50fba75ba50fca75b+12sf100aa50sf150aa50sf100aa20sf150aa20frs200aafrs200bamosfet ir 840250a darlington transistorsf200aa20fca75bc50sqd65bb75fba75ba
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mosfet ir 840
Abstract: sf200aa20 FCA75BC50 sqd65bb75 FBA75BA50 SF150AA50 FCA50BC50 SF150AA20 250A darlington transistor FBA50BA50
Contextual Info: POW ER M OSFET MODULE Switching Time ns R d s (o n ) V d s (o n ) TYPE mO FBA50BA50 FCA50BC50 FBA50BA FBA75BA50 FCA75BC50 SF100AA50 SF150AA50 SF100AA20 SF150AA20 SF200AA20 SF200AA10 SF200AA10 ☆ New DARLINGTON TRANSISTOR le A VcBO V SQD50 35 50 SQD65 65
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fba50ba50fca50bc50fba75ba50fca75bc50+9sf100aa50sf150aa50sf100aa20sf150aa20sf200aa20frs200aamosfet ir 840sqd65bb75250a darlington transistor
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