TRANSISTOR CEY Search Results

BF 182 transistor

Abstract: transistor 182 marking code M21
Contextual Info: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5

transistor cey npn

Abstract: BFX62 LC 7621 transistor cey
Contextual Info: B F X 62 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN SILIC IU M . PLAN A R E P ITAXIAL Input stages w ith forward automatic gain Self oscillating mixers up to 1 GHz 20 V v CEO Etages d'entrée à commande automatique de gain

S-8324AXXM

Abstract: HA2010
Contextual Info: Contents Features. 1 A Block D iagram . 1 Selection G u id e .2

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

transistor C9012

Abstract: transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram transistor c9014 c9015 transistor c9018 transistor transistor C9015
Contextual Info: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

BUV41

Contextual Info: • 7^53537 0056751 7 ■ S C ô « ^ S - T o H m O M [ l O T S O "T-33r^3t._ N ( s [ * S B S G S-THOMSON F A S T U V 4 1 30E T> S W IT C H IN G P O W E R T R A N S IS T O R ■ FAST SW ITCHING TIM ES . LOW SWITCHING LOSSES ■ VER Y LOW SATURATION VOLTAGE AND

A1000-REV00k9040-IE

Abstract: AX-REM01K9050-IE a1000-fia3071-re A1000-FIV3005-RE A1000-REV00k6050-IE A1000FIA3105RE AX-FIM1024-RE
Contextual Info: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/23
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IC 7448

Abstract: 2N6477 transistor A05 transistors with beta value of 140 2N6478 2N5298 2N6478A TA8405 92CS-22442 of ic 7448
Contextual Info: Q1 3875081 Q E SOLID D É T l3 ñ 7 5 0 ñ l STATE 01E 0Q 17445 17445 T D T - ?7 V/ G e n e ra i-P u rp o a a Power Transistors 2N6477, 2N6478 File Number 6 8 0 TERMINAL DESIGNATIONS Medium-Power •Silicon N-P-N Transistors For Intermediate Power Applications

CEY 3-PIN

Abstract: mark cey transistor cey marking code sot-26 3.3v
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD LR3XXYYB CMOS IC 150mA 2CH LDO REGULATOR „ DESCRIPTION The UTC LR3XXYYB are CMOS voltage regulator ICs that have high output voltage accuracy, low dropout, low supply current, and high ripple rejection. Every voltage regulator IC of

Contextual Info: VITELIC V63C64 H IG H PE R FO R M A N C E , L O W PO W ER 8 K x 8 B IT C M O S S TA T IC R A M Features Description • High speed • Maximum access times of 25, 30, 35, 45, and 55 ns ■ Equal access and cycle times ■ Fully static operation • No clock or refresh required

ofdm transmitter

Abstract: CGH40010 CGH40010 ads GaN limiter GaN PA microwave transmitter circuit diagram GaN ADS Cree Microwave digital Pre-distortion nielsen
Contextual Info: A GaN HEMT Power Amplifier with Variable Gate Bias for Envelope and Phase Signals Ellie Cijvat1 , Kevin Tom2 , Mike Faulkner2 and Henrik Sjöland1 1 2 Dept. of Electrical and Information Technology, Lund University, Sweden P.O. Box 118, SE-221 00 Lund, Sweden

marking L0KA

Abstract: LP2985AIM5-5.0* LOUA LOUA sot23 LOra sot23 Lp2985im5-3.3 LORB marking loub
Contextual Info: tß Semiconductor LP2985 Micropower SOT, 150 mA Low-Noise Ultra Low-Dropout Regulator Designed for Use with Very Low ESR Output Capacitors General Description Features The LP2985 is a 150 mA, 1ixed-output voltage regulator de­ signed to provide ultra low-dropout and low noise in battery

orcad

Contextual Info: ACT 1 Series FPGAs Features • 5V and 3.3V Families fully compatible with JEDEC specifications A security fuse may be programmed to disable all further programming and to protect the design from being copied or reverse engineered. • Up to 2000 Gate Array Gates 6000 PLD equivalent gates

CS27B

Abstract: MTI GE relay CS-27B CHC12A NAA22L PJC31C JBCG53K BCA11AV CLPG12C GCX51
Contextual Info: INSTRUCTIONS Directional Comparison Carrier-Current Pilot Relaying With MHO-Type Distance Relays G E N E R A L E L E C T R IC GEK-7384 Contents Introduction . 3

Contextual Info: Introducing Trinket Created by lady ada Last updated on 2014-05-05 04:30:53 PM EDT Guide Contents Guide Contents 2 Introduction 4 Guided Tour 6 Pinouts 8 Power Pins 10 GPIO Pins 11 Reset and Regulator Output 12 Starting the Bootloader 13 About the bootloader

172CQFP

Abstract: A1225 A1225A A1240 A1240A A1280 A1280A actel a1280a unused pin SV50T actel a1240
Contextual Info: ém cM ACT“ 2 Family FPGAs Features • Up to 8000 Gate Array Gates 20,000 PLD equivalent gates Datapath Performance at 105 MHz • Replaces up to 200 TTL Packages • Replaces up to eighty 20-Pin PAL Packages Two In-Circuit Diagnostic Probe Pins Support Speed

MXT 276

Contextual Info: Æ te lê l ACT" 3 3.3 Volt Field Programmable Gate Arrays • Features • 3.3V Functionality fully compliant with JEDEC specifications • Highly Predictable Performance with 100% Automatic Placement and Routing • 13 ns Clock-to-Output Times • Up to 100 MHz On-Chip Performance

T86 MSOP

Abstract: AD7476A AD7477A AD7478A TMS320C541 AD7476AAKSZ-500RL7
Contextual Info: 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FEATURES FUNCTIONAL BLOCK DIAGRAM Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies

AD7476A

Abstract: AD7476AAKS-500RL7 AD7476AAKS-REEL AD7477A AD7478A DB10 7071D
Contextual Info: a 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A* FEATURES Fast Throughput Rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low Power: 3.6 mW Typ at 1 MSPS with 3 V Supplies 12.5 mW Typ at 1 MSPS with 5 V Supplies Wide Input Bandwidth:

MSOP-8 2fb 1

Abstract: AD7476AAKSZ-500RL7 AD7476A AD7477A AD7478A TMS320C541 ad8478
Contextual Info: 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FEATURES FUNCTIONAL BLOCK DIAGRAM Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies

Contextual Info: 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FEATURES FUNCTIONAL BLOCK DIAGRAM Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies

Contextual Info: 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FUNCTIONAL BLOCK DIAGRAM FEATURES Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies