TRANSISTOR C-111 M Search Results

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem entary to T IP 1 10/111/112

Contextual Info: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112

Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117

Contextual Info: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117

MPF111

Contextual Info: MPF 111 SILICON SILICON N-CHANNEL JUNCTION F IE L D -E F F E C T TRANSISTOR D e p le tio n M ode N-CHANNEL JUNCTION F IE LD -E F FE C T TRANSISTOR device designed fo r general-purpose a m p lifie r and s w itc h in g ap p lic a tio n s . • L o w T ra n s fe r C apacitance — C rss = 1.5 pF (T y p ) @ V q s = 10 V d c

2N4115

Abstract: 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285 2N5346
Contextual Info: llP NPMTO-111 ^ 84aa_^ 2 D I Q D E ISOlaledcnllBntn.-ltenn.-rt' l a f l H B 3 S E TRANSISTOR GO I N C . Ö4D 0G0Q13S □ I 00128 ^— — — t D1DDE TRANSISTOR CQ.J(\IC. FAX ^201^6755883 139-385 * 0u,8lde NV 4 NJ area ca|l T O LL FR EE 800-526-4581 PNP

PS2016B

Abstract: HP 2531 ic ps2016b PS2741 PS2016 H2525 PS2041 TLP112A 4534 PC417
Contextual Info: — 250— LED-Photo Diode Buffered by Transistor L E D - 7 t h rn L m m n ft I r * 111 2 01 ft *,‘i TLP112 # tt * € 2 T L P 112A If max mA) 25 * Vr max (V ) 5 -c 1HJ ft ;* Po 1 max (mW) 45 VCE max (V ) Vcc* 15 P dz IOL max max (m A ) (mW) 8 100 £

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management

TIP110 equivalent

Contextual Info: TIP110/111/112 TIP110/111/112 Monolithic Construction With Built In BaseEmitter Shunt Resistors • • • • Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage Industrial Use TO-220

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

phototransistor til 33

Abstract: TIL112 TIL111 Til 160 h11a H11A1 H11A2 H11B1 TIL116 H11D2
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

NQFP-32

Abstract: nqfp package 30521 amis microcontroller step motor driver nxt AMIS-30521 h-bridge gate drive schematics circuit NQFP-32 ONsemi step motor driver sla stepper motor sla
Contextual Info: AMIS-30521, NCV70521 AMIS-30521/NCV70521 Micro-Stepping Motor Driver Introduction • Dual H−Bridge for 2 Phase Stepper Motors • Programmable Peak−Current Up to 1.2 A Continuous 1.5 A Short • • • • • • • 29 28 MOTXP 30 MOTXP 31 VBB DO

NCV70522

Abstract: 30522 AMIS-30522 NQFP-32 nqfp stepper motor sla A114 AMIS30522C5222G AMIS30522C5222RG JESD22
Contextual Info: AMIS-30522, NCV70522 Micro-Stepping Motor Driver Introduction • • • • • • • • • • • • • • • • Time , Using a 5−Bit Current DAC On−Chip Current Translator SPI Interface Speed and Load−Angle Output 7 Step Modes from Full−Step up to 32 Micro−Steps

BUK637-600A

Abstract: BUK637-600B BUK637-600C
Contextual Info: Philips Components BUK637-600A BUK637-600B BUK637-600C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode,

1n 4148 diode

Abstract: Diode ph 4148 3904 transistor P111-1A 4148 diode 2N 3904 transistor 4148 ph diode ph 4148 diode ph 4148 1n ADP1 Series
Contextual Info: ANALO G D E V IC E S Micropower, Step-Up/Step-Down SW Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V ADP1111 FEATURES Operates from 2 V to 30 V Input V oltage Range 72 kHz Frequency Operation Utilizes Surface M ount Inductors Very Few External Components Required

1N4003 specs

Abstract: 1.8 degree BIPOLAR 4 PIN stepper motor step motor driver sla nqfp AMIS-30522 0.65mm pitch BGA 30521 h-bridge gate drive schematics circuit h-bridge pwm schematics circuit AMIS30522C5222G
Contextual Info: AMIS-30522 Micro-Stepping Motor Driver 1.0 Introduction The AMIS-30522 is a micro-stepping stepper motor driver for bipolar stepper motors. The chip is connected through I/O pins and a SPI interface with an external microcontroller. It has an on-chip voltage regulator, reset-output and watchdog reset, able to supply

AMIS-30512

Abstract: smd 103 stepper motor driver h-bridge gate drive schematics circuit h-bridge pwm schematics circuit 1N4003 A114 JESD22 3 phase MOTOR CONTROL ic 941 smd transistor
Contextual Info: AMIS-30512 Micro-Stepping Motor Driver Introduction Key Features http://onsemi.com PIN ASSIGNMENT DO VDD GND DI CLK NXT DIR ERR SLA CPN CPP VCP • Dual H−Bridge for 2−phase Stepper Motors • Programmable Peak−current up to 800 mA Using a 5−bit Current

D-77761

Abstract: E30R vegacap 11 VEGACAP SERIES 60 CBAR6 SW6020 DN 111 E30C
Contextual Info: Level and Pressure Operating Instruction VEGACAP 1 Safety information Safety information The described module must only be installed and operated as described in this operating instruction. Please note that other action can cause damage for which VEGA does not take

Tico 735

Abstract: switching transistor msd hengstler 735 tico WIRING OF 12 VOLT RELAY LATCHING HOW TO AND MORE
Contextual Info: Operating Instructions tico 735 - Temperature Indicator Introduction Your Hengstler tico 735 Temperature Indicator is one model in a family of 1/8 DIN units which offers breakthrough display technology as well as easy-to-program single-line parameters. Designed to provide instant visual feedback regarding an application’s key input value, the tico 735 not

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.

HP 4N46

Abstract: 4N45 4N46 6N138 6N139 HCPL-0700 HCPL-0701 HCPL-5700 HCPL-5701 TLP553
Contextual Info: - LED -P hoto Diode Buffered by Darlington Transistor with Inter Base Connection L E D - 7 * h • ¿-T K + 2 '- U > h > • 257- m m in fn # IjJ LlJ UJ LU * ft 1 59 # tt. £ JE D E C 6N 138 '-k 2 m T LP553 3K H C P L -0 7 0 0 HP £ H C P L -0 7 0 1 * If

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

Contextual Info: P hilips Sem iconductors bb53T31 DDETT?! 525 AP X Product specification VHF push-pull power MOS transistor BLF245C N AUER PHILIPS/DISCRETE FEATURES b'lE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures