y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
|
PDF
|
|
Contextual Info: SS9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • High total pow er dissipation. PT=625mW High C ollector Current. (Ic= -500m A) C om plem entary to S S 9013 Excellent hpE linearity.
|
OCR Scan
|
ss9012625mw-500m |
PDF
|
9014 ch
Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
Contextual Info: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011
|
OCR Scan
|
o-92a9014 chtransistor npn c 90149018 transistor+7transistor c 90189011 9012 9013 9014 9018100-10l9018transistor 9013 npn audio output90119012 pnp transistor
|
PDF
|
2sc 9015
Abstract: 2236A 2482 TRANSISTOR 9014 to-92 KTC2229 2SC 9012 966a KTC9016 ktp87 9015 TO-92
Contextual Info: @] TV TRANSISTOR USE TYPE VC E 0 V 7K O ELECTRICAL CHARACTERISTICS (Ta = 2 5 C ) MAXIMUM RATINGS lC pC T. ICBO (mA) (mW) <°C) (M A) hFE V c e (M t) MAX VCB [E V CE k' (V) (m A) (V) (mA) (V) Ic Ib (m A) (mA) (MHz) Z*J C o b , * Cre T yp (MIN) h VCE lc (V)
|
OCR Scan
|
382/ktn383/ktn88a/ktn2229/ktn+11ktc90132sc 90152236a2482 transistor9014 to-92ktc22292sc 9012966aktc9016ktp879015 to-92
|
PDF
|
kec kta
Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068
Contextual Info: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)
|
OCR Scan
|
382/ktn383/ktn88a/ktn2229/ktn+13o-92aktc90uktc9013kec kta9014 keckta966a966atransistor 9012transistor 9014ktc388a2236aktc2120ktc2068
|
PDF
|
transistor c 9018
Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Contextual Info: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF
|
OCR Scan
|
t0-92b500fi10kfitransistor c 9018+9transistor cl 1009011 9012 9013 9014 9018transistor 9014 npntransistor 9013 npn audio outputv. 9014 c9016 transistoraudio output transistor npn 90139011 npn transistornpn 9016 transistor
|
PDF
|
transistor BR 9013
Abstract: NPN 9013 transistor c 9013 9013 npn transistor br 9013 transistor 9012 9013 9013 transistor Transistor 9013 9013 pnp transistor npn c 9013
Contextual Info: HN 9013 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, G and H, according to its DC current gain. As complementary type
|
OCR Scan
|
transistor br 9013npn 9013transistor c 90139013 npn transistor+6br 9013transistor 9012 90139013 transistortransistor 90139013 pnptransistor npn c 9013
|
PDF
|
transistor BR 9013
Abstract: BR 9013 transistor 9012 data sheet NPN 9013 9013 transistor 9013 npn transistor datasheet transistor 9013 data sheet transistor 9012 transistor c 9013 9013 npn
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As
|
Original
|
transistor br 9013br 9013transistor 9012data sheet npn 9013+69013 transistor9013 npn transistordatasheet transistor 9013data sheet transistor 9012transistor c 90139013 npn
|
PDF
|
transistor BR 9013
Abstract: transistor c 9013 transistor 9013 NPN 9013 s 9013 h PNP 9013 9013 transistor BR 9012 c 9013 g 9013 npn transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As
|
Original
|
50mhztransistor br 9013transistor c 9013transistor 9013+7npn 9013s 9013 hpnp 90139013 transistorbr 9012c 9013 g9013 npn transistor
|
PDF
|
transistor BR 9013
Abstract: transistor c 9013 transistor 9013 9013 transistor BR 9013 9013 pnp NPN 9013 9013 NPN Transistor Transistor-9013 h 9013 NPN Output Transistor
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As
|
Original
|
50mhztransistor br 9013transistor c 9013transistor 9013+79013 transistorbr 90139013 pnpnpn 90139013 npn transistortransistor-9013 h9013 npn output transistor
|
PDF
|
transistor c 9013
Abstract: transistor BR 9013 NPN 9013 9013 transistor transistor 9013 BR 9013 9013 npn transistor 9013 pnp pin configuration NPN transistor 9013 npn 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As
|
Original
|
50mhztransistor c 9013transistor br 9013npn 9013+79013 transistortransistor 9013br 90139013 npn transistor9013 pnppin configuration npn transistor 9013 npn9013
|
PDF
|
NPN 9013
Abstract: transistor BR 9013 pin configuration NPN transistor 9013 npn 9013 npn transistor 9013 transistor pin configuration NPN transistor 9012 PNP 9013 NPN transistor c 9013 9013 pnp data sheet NPN 9013
Contextual Info: ST 9013 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As
|
Original
|
50mhznpn 9013transistor br 9013pin configuration npn transistor 9013 npn+79013 npn transistor9013 transistorpin configuration npn transistor 9012 pnp9013 npntransistor c 90139013 pnpdata sheet npn 9013
|
PDF
|
9013 npn transistor
Abstract: 9012 Unisonic
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1 FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.
|
Original
|
625mw500ma9013l-x-t92-b9013g-x-t92-b+59013l-x-t92-k9013g-x-t92-kqw-r201-0309013 npn transistor9012 unisonic
|
PDF
|
9012 Unisonic
Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER
|
Original
|
625mw-500ma-50ma-10ma+2qw-r201-0299012 unisonic
|
PDF
|
|
|
|
Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER
|
Original
|
625mw-500maqw-r201-029 |
PDF
|
9012 pnp
Abstract: UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013
Contextual Info: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER
|
Original
|
625mw-500maqw-r201-0299012 pnp+9utc 90139012 transistordata sheet transistor 9012transistor 9012 gpnp 9012transistor c 90129012 pnp transistor9013 transistortransistor 9013
|
PDF
|
UTC 9013
Abstract: 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic
Contextual Info: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER
|
Original
|
625mw500maqw-r201-030utc 9013+99013 npndata sheet npn 9013transistor c 90139013 npn transistornpn silicon transistor 9013utc9013npn 9013 pdf data sheet9013npn9012 unisonic
|
PDF
|
9013 npn
Abstract: NPN 9013 transistor c 9013 9013 npn transistor 9013G C 9013 transistor transistor 9013 9013 NPN Output Transistor IC 9013 transistor 9013 H NPN
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 1 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity. * Complementary to UTC 9012
|
Original
|
625mw500ma9013-x-t92-b9013l-x-t92-b+169013g-x-t92-b9013-x-t92-k9013l-x-t92-k9013g-x-t92-k9013-x-t92-r9013l-x-t92-r9013 npnnpn 9013transistor c 90139013 npn transistor9013gc 9013 transistortransistor 90139013 npn output transistoric 9013transistor 9013 h npn
|
PDF
|
9013 NPN Output Transistor
Abstract: transistor c 9013 transistor cs 9012 transistor cs 9013
Contextual Info: UNISONICTECHNOLOGIESCO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1 W OU T PU T AM PLI FI ER OF POT ABLE RADI OS I N CLASS B PU SH -PU LL OPERAT I ON ̈ 1 FEAT U RES * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.
|
Original
|
625mw500ma9013-x-t92-b9013l-x-t92-b+109013g-x-t92-b9013-x-t92-k9013l-x-t92-k9013g-x-t92-k9013-x-t92-r9013l-x-t92-r9013 npn output transistortransistor c 9013transistor cs 9012transistor cs 9013
|
PDF
|
9011 9012 9013 9014 9018
Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Contextual Info: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER
|
OCR Scan
|
cl9000t0-92b10kfi9011 9012 9013 9014 9018+99011 npn transistortransistor c 9018npn 9016 transistorf 9016 transistortransistor 9014 c npnc 9014 transistor9018 transistor9016 transistorpnp transistor 9015
|
PDF
|
VTT9012
Abstract: Vactec 25CC VTT9013 transistor FC 9013 Transistor 9013
Contextual Info: BDBGbG'ì OGGllfiM =lbl 5bE ì> .050" NPN Phototransistors Clear Epoxy TO-106 Ceramic Package IVCT VTT9012, 9013 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 .7 ) .1 2 6 MAX. H (3 .2 0 ) .0 6 5 ( 2 .1 6 ) 1 .2 0 5 ( 5 .2 1 ) .1 9 5 ( 4 .9 5 )
|
OCR Scan
|
3d30bo-106vtt9012t0-106+6400fcvtt9013vactec25cctransistor fc 9013transistor 9013
|
PDF
|
transistor case To 106
Abstract: case to106 9013 transistor VTT9012 vtt9012 transistor h 9013 NPN 9013 VTT9013 TO-106 TRANSISTOR
Contextual Info: 3D3DbCH OGGllfiM Tbl 5bE V .050“ NPN Phototransistors Clear Epoxy TO-106 Ceramic Package VCT VTT9012, 9013 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS .5 0 .1 2 6 M AX. - | 3 .2 0 Inch (mm) ( 1 2 .7 ) ( 2 . 16) .0 6 5 M IN IM U M 1 <5 . 2 1 ) ( 4 .9 5 )
|
OCR Scan
|
o-106vtt9012t-41-61400fc+8vtt9013transistor case to 106case to1069013 transistorvtt9012 transistorh 9013npn 9013to-106 transistor
|
PDF
|
9013G
Abstract: 9012 SOT-23 9012 pnp MMBT9012LT1 9012 transistor sot-23 transistor SOT23 PD j6 9012 SOT23 MMBT901
Contextual Info: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW
|
Original
|
mmbt9012lt1ot-239013g-500ma+7225mw9012 sot-239012 pnp9012 transistor sot-23transistor sot23 pd j69012 sot23mmbt901
|
PDF
|
9013G
Abstract: 9012 transistor sot-23 9012 pnp MMBT9012LT1
Contextual Info: MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G Collector Current :Ic=-500mA 1.BASE 2.EMITTER 3.COLLECTOR 2.4 1.3 0.4 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW
|
Original
|
mmbt9012lt1ot-239013g-500ma+3225mw9012 transistor sot-239012 pnp
|
PDF
|
