TRANSISTOR C 616 Search Results

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

MU2030

Abstract: MU-2030 MM3726 MM3725
Contextual Info: MM3726 SILICON PNP silicon annular transistor designed for medium-current, high-speed saturated switching and core driver applications, and for complementary c ir ­ cuitry with NPN type MM3725. C o lle c to r c o n n e c te d to ca»«> CASE 31 (TO -5)

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

Contextual Info: Unear 1C Processing INTRODUCTION NPN TRANSISTOR Integra ted c irc u its are d ivid e d in to three general categories: 1 linear, (2) d ig ita l, and (3) MOS. D is tin c tly d iffe re n t design and process te c h n iq u e s are used fo r each type. T he m ain d iffe re n c e betw een lin e a r p ro c ­

mechanical pressure switch

Abstract: Pressure Switches "Pressure Switches" transistor 14305
Contextual Info: Electronic pressure switches Type 616 Technical The type 616 electronic differential pressure switches measure pressure by means of highly resistant ceramic elements. An open collector transistor output accommodates loads up to 100 mA. data Either an N/C or N/O contact may be used, and the upper and lower switching point

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

NEC k 2134 transistor

Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Contextual Info: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

CA3046 equivalent

Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S
Contextual Info: H A RR IS S E M I C O N D S E CT OR blE D • 43 D2 27 1 CA3045, CA3046 CSÌ H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays March 1993 Description Features • Q O H b 'H S 37b ■ HAS Two Matched Transistors: V BE Matched ±5mV; Input

2SC155

Abstract: 2SC1552 s36ca IC1510
Contextual Info: 2 s c 1552 O ^ ^ SILICON NPN EPITAXIAL PLANAR TRANSISTOR H U H F - S - ^ KÊIMMilBffl o O I I * ffl INDUSTRIAL APPLICATIONS U H F ~ S Ban d Low N o i s e A m p l f i e r A pp i i c a t iong O H igh S p e ed S w itc h in g A p p l i c a t i o n s • fiH ff-e -f S

702 TRANSISTOR

Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE

2SC4813

Abstract: VDF pn C40r
Contextual Info: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è

2SD588

Abstract: 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

614h

Abstract: 138B 2SC595
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Transistor NP 3773

Abstract: TC-6233 jb 5531 F530 T108 L32* MARKING DU 9 marking js 2b K/AK-34
Contextual Info: zr— S • V — H Compound Transistor GAI F4M n m o s < i T X ÎS ÎÆ è lA] / l L T ^ £ ~ t„ R i =22 kû , R 2= 22 ki2 o GN1F4M > 3 > 7" )Ì / > 9 ]) Ti'-Sim X " ë â ~ t, ( T a = 25 "C ) m h «s- al fô -¥ jL a l , 7 9 - -ì-xFh*]' )± ^CBO 60

TT 46 N 12 LOF

Abstract: MX 0542 CL 2181 ic TT 46 N 16 LOF mmi 2740 02B2 PA33 TC-6168 6168 sc
Contextual Info: -y -57 . S/ 1^ NEC IS-ê- ^ > > 7.9 Compound Transistor iï f /v r* AA1L3M f t t t F*3JgNP N i »J□ > & m 7121*1 o y<y[ 7 x i f f i £ l*3j& L T ^ -fi : mm i-0 ( R i = 4.7 kû, R 2= 4.7 kû) o A N 1 L 3 M t 3 >-7° 'J / y 9 'J T f ê f f l ' C ë i i ~ 0

TRANSISTOR si 6822

Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
Contextual Info: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to

transistor working principle

Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron
Contextual Info: RF Power Innovations 310 320-6160 AN3025 Transistor Mounting and Soldering Brett Kelley and Eric Hokenson 18 December 2003 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. 1. Solder pre-tin the transistor leads.

DC solid state relay 12vdc

Abstract: opto-switch 307913 rs 306-061 Optical proximity sensor through beam solid state variable relay 5A Solid State RELAY IC 307-913 306-061 30606 optoswitch
Contextual Info: Issued November 1989 009-912 Data Pack E Data Sheet Optical proximity switch system RS stock numbers 633-616, 633-818, 633-824, 633-830, 633-846, 633-852, 633-868 The RS optical proximity switch interface board with associated photoheads or opto-switches form a low

306-061

Abstract: Optical proximity sensor through beam 307-913 rs 306-061 DC solid state relay 12vdc opto-switch 307913 5A Solid State RELAY IC opto-switch optoswitch solid state variable relay
Contextual Info: Issued March 1997 232-3175 Data Pack E Data Sheet Optical proximity switch system RS stock numbers 633-616, 633-818, 633-824, 633-830, 633-846, 633-852, 633-868 The RS optical proximity switch interface board with associated photoheads or opto-switches form a low

Contextual Info: Memory IC Reset 1C with battery backup function BA6129 AF/BA6162/BA6162 F T h e BA6129AF, BA6162, and B A 6162F are reset ICs with a battery backup function, designed for equ ipm ent using SR A M s and other sim ilar c om po nen ts. T h e s e IC s are configured of a reset signal and C S signal o utpu t unit an d a