TRANSISTOR C 616 Search Results
TRANSISTOR C 616 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLA1011-2 |
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Avionics LDMOS transistor |
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RX1214B300YI |
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RX1214B300Y - Microwave Power Transistor |
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CA3127MZ |
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CA3127 - Transistor Array |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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TRANSISTOR C 616 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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D 1437 transistorContextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the |
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2SC5004 D 1437 transistor | |
MU2030
Abstract: MU-2030 MM3726 MM3725
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MM3726 MM3725. 10-SATURATION MU2030 MU-2030 MM3726 MM3725 | |
1.4464
Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
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2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473 | |
2SC5012-T1Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . • |
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2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1 | |
TRANSISTOR GB 558Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . • |
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2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558 | |
LA 7693
Abstract: ic CD 4047 7737 transistor
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2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor | |
Contextual Info: Unear 1C Processing INTRODUCTION NPN TRANSISTOR Integra ted c irc u its are d ivid e d in to three general categories: 1 linear, (2) d ig ita l, and (3) MOS. D is tin c tly d iffe re n t design and process te c h n iq u e s are used fo r each type. T he m ain d iffe re n c e betw een lin e a r p ro c |
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mechanical pressure switch
Abstract: Pressure Switches "Pressure Switches" transistor 14305
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Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from |
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2SC5010 | |
NEC k 2134 transistor
Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
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NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612 | |
2SC 968 NPN TransistorContextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from |
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2SC5007 2SC 968 NPN Transistor | |
CA3046 equivalent
Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S
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CA3045, CA3046 CA3045 CA3046 CA3046 equivalent Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S | |
2SC155
Abstract: 2SC1552 s36ca IC1510
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2sc1552 Vce-10V 0SC155S3 2SC155 2SC1552 s36ca IC1510 | |
702 TRANSISTOR
Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
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NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663 | |
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2SC4813
Abstract: VDF pn C40r
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2SC4813 2SC4813 D15603JJ2V0DS00 TC-7819) VDF pn C40r | |
2SD588
Abstract: 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571
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2SD593 2SD596 2SD608 Ir-25 2SD610 2SD588 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571 | |
614h
Abstract: 138B 2SC595
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250nS 150nS KT-2003 614h 138B 2SC595 | |
Transistor NP 3773
Abstract: TC-6233 jb 5531 F530 T108 L32* MARKING DU 9 marking js 2b K/AK-34
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PWS10 CycleS50 Transistor NP 3773 TC-6233 jb 5531 F530 T108 L32* MARKING DU 9 marking js 2b K/AK-34 | |
TT 46 N 12 LOF
Abstract: MX 0542 CL 2181 ic TT 46 N 16 LOF mmi 2740 02B2 PA33 TC-6168 6168 sc
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SC-43B TT 46 N 12 LOF MX 0542 CL 2181 ic TT 46 N 16 LOF mmi 2740 02B2 PA33 TC-6168 6168 sc | |
TRANSISTOR si 6822
Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
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uPA2981 uPA2982 TRANSISTOR si 6822 SI 6822 PA2981C transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR TRANSISTOR NPN 6822 | |
transistor working principle
Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron
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AN3025 transistor working principle weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron | |
DC solid state relay 12vdc
Abstract: opto-switch 307913 rs 306-061 Optical proximity sensor through beam solid state variable relay 5A Solid State RELAY IC 307-913 306-061 30606 optoswitch
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12Vdc 100mA DC solid state relay 12vdc opto-switch 307913 rs 306-061 Optical proximity sensor through beam solid state variable relay 5A Solid State RELAY IC 307-913 306-061 30606 optoswitch | |
306-061
Abstract: Optical proximity sensor through beam 307-913 rs 306-061 DC solid state relay 12vdc opto-switch 307913 5A Solid State RELAY IC opto-switch optoswitch solid state variable relay
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12Vdc 100mA 306-061 Optical proximity sensor through beam 307-913 rs 306-061 DC solid state relay 12vdc opto-switch 307913 5A Solid State RELAY IC opto-switch optoswitch solid state variable relay | |
Contextual Info: Memory IC Reset 1C with battery backup function BA6129 AF/BA6162/BA6162 F T h e BA6129AF, BA6162, and B A 6162F are reset ICs with a battery backup function, designed for equ ipm ent using SR A M s and other sim ilar c om po nen ts. T h e s e IC s are configured of a reset signal and C S signal o utpu t unit an d a |
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BA6129 AF/BA6162/BA6162 BA6129AF, BA6162, 6162F BA6129AF BA6162 BA6162F, BA6162F |