TRANSISTOR C 616 Search Results

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

702 TRANSISTOR

Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE

TRANSISTOR si 6822

Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
Contextual Info: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to

transistor working principle

Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron
Contextual Info: RF Power Innovations 310 320-6160 AN3025 Transistor Mounting and Soldering Brett Kelley and Eric Hokenson 18 December 2003 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. 1. Solder pre-tin the transistor leads.

TE809

Contextual Info: 2 SE d H/A-con p h o m sttaaos ddddssd ?th » m a p T-33-/S M/A-COM PHI, INC. AfiiCC 1742 CRENSHAW BLVD. TORRANCE. CALIFORNIA 9050 1 (213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET ABSOLUTE MAXIMUM RATINGS PH04045-400H

transistor BUJ100

Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
Contextual Info: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

BST70A

Abstract: j s switching transformer mos transistor equivalent book BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST70A N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor BST70A QUICK REFERENCE DATA

TRANSISTOR SMD MARKING CODE DK

Abstract: 301 marking code PNP transistor TRANSISTOR SMD CODE PACKAGE SOT23 501 smd transistor marking DK smd TRANSISTOR code marking pb sot23 transistor marking 44 sot23 339 marking code SMD transistor DK smd code sot23 TRANSISTOR SMD CODE 339 TRANSISTOR SMD MARKING CODE SP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA143ZT PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 12 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143ZT

lm 9805

Abstract: smd transistor marking B3 smd transistor marking DK diode SOT89 smd marking B mumbai SMD Transistor 6f BP317 BST120 transistor smd marking dk Transistor lm 358
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST120 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

BSP254A

Abstract: BSP254 MDA708
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP254; BSP254A P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical

IN5817 schottky diode symbol

Abstract: IN5817 diode Samsung Tantalum Capacitor TC1201 pin configuration transistor 2N2222 tc120x in5817 2N2222 NPN Transistor features A 673 C2 transistor 595D
Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller FEATURES GENERAL DESCRIPTION • TC120 is a 300 KHz PFM/PWM step-down Buck DC/DC regulator/controller combination for use in systems operating from two or more cells, or in line-powered applications. It uses PWM as the primary modulation scheme, but

transistor equivalent book FOR D 1047

Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor

transistor fp 1016

Abstract: BFQ34T ON4497 transistor 1548 b FP 801 QS 100 NPN Transistor npn transistor dc 558 transistor 828 "NPN Transistor" d 772 transistor
Contextual Info: Product specification P hilips Sem iconductors -T-33-QS NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL BFQ34T SbE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The device features high output voltage

MARKING CODE 13t sot363

Abstract: sot363 13t BC847BPN 301 marking code PNP transistor BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BPN NPN/PNP general purpose transistor Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 26 Philips Semiconductors Preliminary specification NPN/PNP general purpose transistor

LX1214E500X

Abstract: BD239 BY239 SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LX1214E500X NPN microwave power transistor Preliminary specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Preliminary specification NPN microwave power transistor

transistor BR 471 A

Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
Contextual Info: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

07256

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

03aa03

Contextual Info: PMBF170 N-channel enhancement mode field-effect transistor Rev. 03 — 23 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PMBF170 in SOT23.

PZB16035U

Abstract: SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PZB16035U NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

BSN20

Abstract: HZG303
Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

Contextual Info: PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

702 TRANSISTOR smd

Abstract: TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE dk 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 2N7002 PHILIPS MARKING TRANSISTOR SMD 702 G 702 transistor smd code SMD MARKING CODE TRANSISTOR 501 2N7002 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA