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    TRANSISTOR C 616 Search Results

    TRANSISTOR C 616 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR C 616 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D 1437 transistor

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the


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    2SC5004 D 1437 transistor PDF

    MU2030

    Abstract: MU-2030 MM3726 MM3725
    Contextual Info: MM3726 SILICON PNP silicon annular transistor designed for medium-current, high-speed saturated switching and core driver applications, and for complementary c ir ­ cuitry with NPN type MM3725. C o lle c to r c o n n e c te d to ca»«> CASE 31 (TO -5)


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    MM3726 MM3725. 10-SATURATION MU2030 MU-2030 MM3726 MM3725 PDF

    1.4464

    Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S


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    2SC5289 2SC5289 SC-61 2SC5289-T1 1.4464 NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473 PDF

    2SC5012-T1

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •


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    2SC5012 2SC5012-T1 2SC5012-T2 2SC5012-T1 PDF

    TRANSISTOR GB 558

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


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    2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558 PDF

    LA 7693

    Abstract: ic CD 4047 7737 transistor
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain


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    2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor PDF

    Contextual Info: Unear 1C Processing INTRODUCTION NPN TRANSISTOR Integra ted c irc u its are d ivid e d in to three general categories: 1 linear, (2) d ig ita l, and (3) MOS. D is tin c tly d iffe re n t design and process te c h n iq u e s are used fo r each type. T he m ain d iffe re n c e betw een lin e a r p ro c ­


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    PDF

    mechanical pressure switch

    Abstract: Pressure Switches "Pressure Switches" transistor 14305
    Contextual Info: Electronic pressure switches Type 616 Technical The type 616 electronic differential pressure switches measure pressure by means of highly resistant ceramic elements. An open collector transistor output accommodates loads up to 100 mA. data Either an N/C or N/O contact may be used, and the upper and lower switching point


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    PDF

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from


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    2SC5010 PDF

    NEC k 2134 transistor

    Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
    Contextual Info: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


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    NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612 PDF

    2SC 968 NPN Transistor

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from


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    2SC5007 2SC 968 NPN Transistor PDF

    CA3046 equivalent

    Abstract: ca3046 CA3045 Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S
    Contextual Info: H A RR IS S E M I C O N D S E CT OR blE D • 43 D2 27 1 CA3045, CA3046 CSÌ H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays March 1993 Description Features • Q O H b 'H S 37b ■ HAS Two Matched Transistors: V BE Matched ±5mV; Input


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    CA3045, CA3046 CA3045 CA3046 CA3046 equivalent Harris CA3046 "an5296 Application of the CA3018" CA3046 NPN matched transistors "Application of the CA3018" 619 TRANSISTOR D430S PDF

    2SC155

    Abstract: 2SC1552 s36ca IC1510
    Contextual Info: 2 s c 1552 O ^ ^ SILICON NPN EPITAXIAL PLANAR TRANSISTOR H U H F - S - ^ KÊIMMilBffl o O I I * ffl INDUSTRIAL APPLICATIONS U H F ~ S Ban d Low N o i s e A m p l f i e r A pp i i c a t iong O H igh S p e ed S w itc h in g A p p l i c a t i o n s • fiH ff-e -f S


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    2sc1552 Vce-10V 0SC155S3 2SC155 2SC1552 s36ca IC1510 PDF

    702 TRANSISTOR

    Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE


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    NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663 PDF

    2SC4813

    Abstract: VDF pn C40r
    Contextual Info: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è


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    2SC4813 2SC4813 D15603JJ2V0DS00 TC-7819) VDF pn C40r PDF

    2SD588

    Abstract: 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571
    Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    2SD593 2SD596 2SD608 Ir-25 2SD610 2SD588 2sd586 transistor 2sD586 2sd588 data 2SD587 transistor 2SD587 2SD593 2SB601 2SD560 2SD571 PDF

    614h

    Abstract: 138B 2SC595
    Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    250nS 150nS KT-2003 614h 138B 2SC595 PDF

    Transistor NP 3773

    Abstract: TC-6233 jb 5531 F530 T108 L32* MARKING DU 9 marking js 2b K/AK-34
    Contextual Info: zr— S • V — H Compound Transistor GAI F4M n m o s < i T X ÎS ÎÆ è lA] / l L T ^ £ ~ t„ R i =22 kû , R 2= 22 ki2 o GN1F4M > 3 > 7" )Ì / > 9 ]) Ti'-Sim X " ë â ~ t, ( T a = 25 "C ) m h «s- al fô -¥ jL a l , 7 9 - -ì-xFh*]' )± ^CBO 60


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    PWS10 CycleS50 Transistor NP 3773 TC-6233 jb 5531 F530 T108 L32* MARKING DU 9 marking js 2b K/AK-34 PDF

    TT 46 N 12 LOF

    Abstract: MX 0542 CL 2181 ic TT 46 N 16 LOF mmi 2740 02B2 PA33 TC-6168 6168 sc
    Contextual Info: -y -57 . S/ 1^ NEC IS-ê- ^ > > 7.9 Compound Transistor iï f /v r* AA1L3M f t t t F*3JgNP N i »J□ > & m 7121*1 o y<y[ 7 x i f f i £ l*3j& L T ^ -fi : mm i-0 ( R i = 4.7 kû, R 2= 4.7 kû) o A N 1 L 3 M t 3 >-7° 'J / y 9 'J T f ê f f l ' C ë i i ~ 0


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    SC-43B TT 46 N 12 LOF MX 0542 CL 2181 ic TT 46 N 16 LOF mmi 2740 02B2 PA33 TC-6168 6168 sc PDF

    TRANSISTOR si 6822

    Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
    Contextual Info: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to


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    uPA2981 uPA2982 TRANSISTOR si 6822 SI 6822 PA2981C transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR TRANSISTOR NPN 6822 PDF

    transistor working principle

    Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron
    Contextual Info: RF Power Innovations 310 320-6160 AN3025 Transistor Mounting and Soldering Brett Kelley and Eric Hokenson 18 December 2003 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. 1. Solder pre-tin the transistor leads.


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    AN3025 transistor working principle weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron PDF

    DC solid state relay 12vdc

    Abstract: opto-switch 307913 rs 306-061 Optical proximity sensor through beam solid state variable relay 5A Solid State RELAY IC 307-913 306-061 30606 optoswitch
    Contextual Info: Issued November 1989 009-912 Data Pack E Data Sheet Optical proximity switch system RS stock numbers 633-616, 633-818, 633-824, 633-830, 633-846, 633-852, 633-868 The RS optical proximity switch interface board with associated photoheads or opto-switches form a low


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    12Vdc 100mA DC solid state relay 12vdc opto-switch 307913 rs 306-061 Optical proximity sensor through beam solid state variable relay 5A Solid State RELAY IC 307-913 306-061 30606 optoswitch PDF

    306-061

    Abstract: Optical proximity sensor through beam 307-913 rs 306-061 DC solid state relay 12vdc opto-switch 307913 5A Solid State RELAY IC opto-switch optoswitch solid state variable relay
    Contextual Info: Issued March 1997 232-3175 Data Pack E Data Sheet Optical proximity switch system RS stock numbers 633-616, 633-818, 633-824, 633-830, 633-846, 633-852, 633-868 The RS optical proximity switch interface board with associated photoheads or opto-switches form a low


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    12Vdc 100mA 306-061 Optical proximity sensor through beam 307-913 rs 306-061 DC solid state relay 12vdc opto-switch 307913 5A Solid State RELAY IC opto-switch optoswitch solid state variable relay PDF

    Contextual Info: Memory IC Reset 1C with battery backup function BA6129 AF/BA6162/BA6162 F T h e BA6129AF, BA6162, and B A 6162F are reset ICs with a battery backup function, designed for equ ipm ent using SR A M s and other sim ilar c om po nen ts. T h e s e IC s are configured of a reset signal and C S signal o utpu t unit an d a


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    BA6129 AF/BA6162/BA6162 BA6129AF, BA6162, 6162F BA6129AF BA6162 BA6162F, BA6162F PDF