TRANSISTOR C 616 Search Results

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

transistor c 616

Abstract: ksp25
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP25/26/27 DARLINGTON TRANSISTOR TO-92 • Collector-Em itter Voltage: V ces=KSP25: 40V KSP26:50V KSP27:60V • Collector Dissipation:Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) C haracteristic Collector-Base Voltage

MU2030

Abstract: MU-2030 MM3726 MM3725
Contextual Info: MM3726 SILICON PNP silicon annular transistor designed for medium-current, high-speed saturated switching and core driver applications, and for complementary c ir ­ cuitry with NPN type MM3725. C o lle c to r c o n n e c te d to ca»«> CASE 31 (TO -5)

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

cl 740

Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
Contextual Info: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

lm 9805

Abstract: LM 886 IC chip transistor smd za 28 ferroxcube 4322 tantalum 106 h el 817 LM 858 IC chip BO 536 OF sk 733
Contextual Info: DISC RETE S E M IC O N D U C TO R S A SlnlEET BLV2047 UHF power transistor 1998 Mar 10 Product specification Supersedes data of 1998 Jan 28 File under Discrete Semiconductors, SC08b Philips Semiconductors PHILIPS PHILIPS Phi l i ps S e m i c o n d u c t o r s

Contextual Info: AUIRG4PH50S AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency

smd ya transistor

Abstract: TRANSISTOR BO 344 BSH203 SMD TRANSISTOR qd
Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH203 P-channel enhancement mode MOS transistor 1998 Mar 31 Preliminary specification Supersedes data of 1997 Nov 26 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s

smd ya transistor

Abstract: smd AYA
Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH206 P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s

Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ PHP222 Dual P-channel enhancement mode MOS transistor 1998 Apr 01 Preliminary specification Supersedes data of 1998 Mar 24 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s

smd transistor GY

Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH205 P-channel enhancement mode MOS transistor 1998 Apr 01 Preliminary specification Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s

2SC2718

Abstract: 2SA1151 47 HFK 05B2 TL 5551 eu025 PA33 3773 transistor amplifier A0886
Contextual Info: NPN Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use Om , \ 7 ^ 7 + > /, Îïl'Â Î'X 100 m A t ' C c n ft Ml 1- -7 "/J1J i t IT lït JIJT ë i t e o ri’óifníf r . T " , hKn' 3 . ' . W f â t L ' C i ' H ÿfïfêig/PACKAGE DIMENSIONS

CA3045

Abstract: CA3046 equivalent ca301b CA3046 Harris CA3046 CA3046M
Contextual Info: rp CA3045, CA3046 H A R R IS S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays M arch 1993 Features Description • Two Matched Transistors: V BE Matched ±5mV; Input Offset Current 2 iA Max at lc = 1mA T h e C A 3 0 4 5 and C A 3 0 4 6 each consist of five general

transistor smd ba rn

Abstract: sot494
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c

Contextual Info: Unear 1C Processing INTRODUCTION NPN TRANSISTOR Integra ted c irc u its are d ivid e d in to three general categories: 1 linear, (2) d ig ita l, and (3) MOS. D is tin c tly d iffe re n t design and process te c h n iq u e s are used fo r each type. T he m ain d iffe re n c e betw een lin e a r p ro c ­

CA3046 equivalent

Abstract: CA3046 CA3045 Harris CA3046 an5296 CA3018 CA3045F CA3046M CA3046M96
Contextual Info: CA3045, CA3046 S E M I C O N D U C T O R General Purpose N-P-N Transistor Arrays May 1994 March 1993 Features Description • Two Matched Transistors: VBE Matched ±5mV; Input Offset Current 2µA Max at IC = 1mA The CA3045 and CA3046 each consist of five general

mechanical pressure switch

Abstract: Pressure Switches "Pressure Switches" transistor 14305
Contextual Info: Electronic pressure switches Type 616 Technical The type 616 electronic differential pressure switches measure pressure by means of highly resistant ceramic elements. An open collector transistor output accommodates loads up to 100 mA. data Either an N/C or N/O contact may be used, and the upper and lower switching point

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

transistor d 2389

Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

TRANSISTOR C 2577

Abstract: transistor A62
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Preliminary specification UHF wideband transistor PRF957 PINNING - SOT323 FEATURES • Small size PIN SYMBOL • Low noise 1 b • Low distortion 2 e emitter • High gain 3 c collector