TRANSISTOR C 373 Search Results

ic TT 2222

Abstract: BLY91A transistor 1971 transistor c 1971 transistor tt 2222 a10 transistor
Contextual Info: ObE D N AMER P H I L I P S /D IS C RE TE 8 60 1 1936 D • bbS3T31 0014174 T - ? 3 ~ I BLY91A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and

sm 9112

Abstract: three phase generator 9110 equivalent fairchild 9112 "THREE-PHASE GENERATOR" MQS3700 micrologic IV-11 9109 DC 9112
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A F A IR C H IL D C O M P A T IB L E C U R R E N T S IN K IN G LO G IC P R O D U C T O 'C TO 7 5 * C T E M P E R A T U R E RA N G E GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor M icrologic* Integrated Circuit

2SA1464

Abstract: 1S955 2SC3739
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE 2S A 1464 HIGH FREQUENCY AMPLIFIER AND SW ITCHING PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High f T : f T = 4 0 0 M H z 2.8 ± 0.2 • Complementary to 2S C 3739

CSA1012

Abstract: CSC2562 ic 356 transistor CSA1012
Contextual Info: CSA1012, CSC2562 CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications i— i * r: * .4 IP U = ,C . e , •il t * j DJ g 1 tl DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1.40 3,75

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

fairchild micrologic

Abstract: D9109 10-JK 9110 F 9109
Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit

transistor 131 8D

Abstract: transistor k 3728 QBE+61.2+dp2
Contextual Info: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­

Contextual Info: FS 50 R 12 KF Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,068 R th J C DC, pro Zweig / per arm 0,410 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 50

transistor L6

Abstract: BLY92C BLY92 PL 431 transistor
Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • btSB'îBl 002*1732 T13 ■ APX JL BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: / NEC ELECTRON DEVICE SILICON TRANSISTOR / 2SC3734 HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in m illim eters • High Speed: t stfl < 200 rts • C om plem entary to 2SA1461 ABSOLUTE M AXIM UM RATINGS

bfq68 scattering

Abstract: BFQ68 d 1556 transistor ha 1452 Amplifiers IEC134 1685 transistor
Contextual Info: b b 5 3 ^ 3 1 P h ilip s S e m ic o n d u c to rs 0 Q 3 ]ib 5 3 437 M l AP X P ro d u c t s p e c ific a tio n NPN 4 GHz wideband transistor •— BFQ68 N A ME R P H IL IP S /D IS C R E T E b *1 E I> PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A

transistor equivalenti

Contextual Info: TYPE TIS105 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 1 2 8 0 , M A R C H 1 9 7 0 - R E V IS E D M A R C H 1973 HIGH-FREQUENCY SILECTt TRANSISTOR* DESIGNED FOR TV MIXERS AND NON-AGC IF STAGES Full Characterization to Simplify Circuit Design

CSA1012

Contextual Info: CSA1012, CSC2562 L CSA1012 PNP PLASTIC POWER TRANSISTOR CSC2562 NPN PLASTIC POWER TRANSISTOR High Current Switching Applications OlM A B C D e F G H J K L _ * M N MSN MAX 16.51 10.67 4.83 _ 0.90 1,15 ! ,40 3,75 3.88 2,29 2.79 2,54 3.43 0,56 12,70 14,73 _ 6.35

CSA1012

Abstract: CSC2562
Contextual Info: CSA1012, CSC2562 CSA1012 CSC2562 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR High Current Switching Applications •E oa ai DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4,83 0.90 1.15 1,40 3,75 3.88 2,29 2.79 2.54 3.43 0,56 12.70 14,73 6,35

AVF1000

Abstract: c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w
Contextual Info: AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG B A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 • Internal Input/Output Matching Networks

SF 369

Abstract: TRANSISTOR C 369 TB531 t03 package transistor pin dimensions BUZ83 K 3911
Contextual Info: PowerMOS transistor N AUER P H IL IP S /D IS C R ET E BUZ83 OLE D • OOlMbfiE 1 ■ T - 2 1 - 1 1 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effeci power transistor in a metal envetope. This device is intended for use in Switched Mode Power Supplies

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

darlington pair transistor 1A

Abstract: ECG904 alu schematic circuit with transistor Darlington pair MHO16 BT 156 transistor
Contextual Info: PHILIPS E C G INC bbSSÌHfl 000350^ t 17E D ECG904 GENERAL-PURPOSE TRANSISTOR ARRAY semiconductors DIMENSIONAL OUTLINE D im e n sio n s In In c h e s and m illim eters Fof-Low -Pow sr Applications at Frequencies from D C Through the V H F Range FEATURES •

Contextual Info: Central CMPT591E Semiconductor Corp. E N H A N C E D S P E C IF IC A T IO N SURFACE MOUNT PNP SILICON TRANSISTOR EN H AN CED <E> - 'V S P E C IFIC A T IO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP

Contextual Info: N AMER PHI L I P S / D I S CR E T E bbSBTBl 0015531 h □ hE D RZ2731B45W r-s s - 3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 2,7 to 3,1 GHz.

cis 280v

Contextual Info: Mfafxm w an A M P com pany RF MOSFET Power Transistor, 15W, 28V 100-500 MHz UF2815B Features • • • • • • N -C hannel H nhancem ent M ode Device DMOS S tru ctu re Lower C apacitances for B ro a d b an d O p e ra tio n C o m m o n S ource C onfiguration