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    TRANSISTOR C 373 Search Results

    TRANSISTOR C 373 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR C 373 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    fairchild micrologic

    Abstract: D9109 10-JK 9110 F 9109
    Contextual Info: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit


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    M3700 10--JK fairchild micrologic D9109 10-JK 9110 F 9109 PDF

    Contextual Info: FS 50 R 12 KF Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,068 R th J C DC, pro Zweig / per arm 0,410 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 50


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    34032T7 00D2Q74 PDF

    NEC 2705 L 107

    Abstract: IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The N E32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


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    NE32484A E32484A NEC 2705 L 107 IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET PDF

    The Japanese Transistor Manual 1981

    Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


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    NE32484A NE32484A NE32484A-SL The Japanese Transistor Manual 1981 japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking PDF

    2N3375

    Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
    Contextual Info: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted


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    2N3375 10/32-NF-2A-Thread O-117 O-128 O-131 O-129 2N3375 Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690 PDF

    d768 transistor

    Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
    Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent


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    NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442 PDF

    702 TRANSISTOR

    Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE


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    NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663 PDF

    Contextual Info: SIEM ENS BF 554 NPN Silicon RF Transistor • For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type Marking Ordering Code tape and reel BF 554 CC Q62702-F1042 Pin Co nfigural ion 1 2 3 B E Package1) C SOT-23


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    Q62702-F1042 OT-23 S35hDS fl235bDS PDF

    NE32584C-T1

    Abstract: nec 3435 transistor am 4428
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.


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    NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428 PDF

    Q2T3725

    Contextual Info: TYPE Q2T3725 QUAD N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 1 5 1 8 , A U G U S T 1 9 7 1 - R E V I S E D M A R C H 1 9 7 3 FAST, H IG H -V O LT A G E , H IG H -C U R R E N T CORE D R IV E R S TOP VIEW • h p e Guaranteed at 100 mA and 500 mA


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    Q2T3725 TIS127 14-PIN PDF

    a5t3565

    Contextual Info: TYPE A5T3565 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 731 1 9 5 1 , M A R C H 1 9 7 3 S IL E C T t T R A N S IS T O R ! FOR H I-F I A U D IO A N D G EN ER A L PURPOSE LOW -FR EQ UENC Y A M P L IF IE R APPLICATIO N S • High h F E • ■ • 150 to 600


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    A5T3565 IL-STD-202C, PDF

    2n243

    Abstract: 2N244 transistor all
    Contextual Info: TYPES 2N243, 2N244 N-P-N GROW N-JUNCTIO N SILICON TRANSISTORS B U L L E T I N NO. DL-S 6 1 2 2 3 8 , D E C E M B E R 1 9 6 1 Oval Welded Package mechanical data The transistor is in an oval w elded p ackag e with glass-to-metal hermetic seal between case an d leads.


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    2N243, 2N244 2n243 transistor all PDF

    2N335

    Contextual Info: TYPE 2N335 N-P-N GROWN-JUNCTION SILICON TRANSISTOR U LL E T IN NO. DL-S 591038. M A R C H 1959 Beta From 36 to 90 Specifically designed for high gain at high temperatures nw chw ical data W eld ed ca se w ith g lass-to -m etal h erm etic seal betw een ca se an d lead s. U n it w eig h t is ap p ro x im a te ly


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    2N335 PDF

    thyristor T122

    Abstract: TLP647 tlp 748 634 transistor TRANSISTOR P 3 TLP622 TLP121-4 51 ria 40 ic 747 cn R524
    Contextual Info: Page ” N” : Technical Data is not included in this Data Book. 3. Alphanumeric Index Type TLP1 37 TLP141G TLP1 60G TLP160J TLP161G TLP161J TLP168J TLP1 81 TLP1 90 TLP1 9 0B T L P 191 T L P 191 B TLP215 TLP216 TLP227G T LP 2 2 7 G -2 TLP250 TLP 2 5 1 T LP 2 9 6 G


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    TLP3520 TLP3520A TLP3521 TLP3526 TLP3527 TLP3530 TLP3560 TLP3561 TLP3566 thyristor T122 TLP647 tlp 748 634 transistor TRANSISTOR P 3 TLP622 TLP121-4 51 ria 40 ic 747 cn R524 PDF

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


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    1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 PDF

    LA 7612

    Abstract: 4727 TLE SO CAY transistor sd 3 phase monitoring IC IED01769 IED01772 IED01780 IED01781 IED01782
    Contextual Info: SIEMENS 2 -P hase S tepper-M o tor D river TLE 4727 Overview Bipolar 1C Features • 2 x 0.7 amp. outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Outputs free of crossover current


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    Q67000-A9099 P-DIP-20-3 S235b05 01G3b2Q 25I20X 01Q3b21 LA 7612 4727 TLE SO CAY transistor sd 3 phase monitoring IC IED01769 IED01772 IED01780 IED01781 IED01782 PDF

    QRB1134

    Abstract: QRB1114
    Contextual Info: [$o OPTOELECTRONICS REFLECTIVE OBJECT SENSORS P a rt N um ber Test C o n d itio n s Dust C over •f /V ce B V qeo m in u n its V m in • c (O N ) M ax R a tin g T a b le Phototransistor ;C> {E) (K) (A) COLLECTOR EMITTER CATHODE ANODE OPB703 YES 40 mA/5V<2-3>


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    OPB703 OPB704 QRB1113 QRB1114 OPB705 QRC1113 QRD1313) QRB1134 QRB1114 PDF

    2N3904D

    Abstract: SMPS SCHEMATIC DIAGRAM 36 Volt transistor BC rx 2N3904 npn bjt transistor 2n3904 transistor 2N3904 NPN transistor PM5346 PM5946 2N3904 EMK325BJ475KN-B
    Contextual Info: PM5946 SORD REFERENCE DESIGN ERRATA PMC-960831 ISSUE 3 S/UNI-LITE OPTICAL REFERENCE DESIGN PM5946 S/UNI- TM 155-LITE S/UNI-LITE OPTICAL REFERENCE DESIGN SORD ERRATA ISSUE 3: MARCH 1998 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000


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    PM5946 PMC-960831 PM5946 155-LITE PMC-950112 PM-960831 2N3904D SMPS SCHEMATIC DIAGRAM 36 Volt transistor BC rx 2N3904 npn bjt transistor 2n3904 transistor 2N3904 NPN transistor PM5346 2N3904 EMK325BJ475KN-B PDF

    8060 transistor

    Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
    Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,


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    8060-1G11 8060-1G6 MIL-S-83502/2 MIL-S-83502/5. 8060 transistor 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45 PDF

    transistor compatible 3660

    Abstract: marking code FA sot23 LCOS
    Contextual Info: TM TMP431 TMP432 P432 SBOS441C – SEPTEMBER 2009 – REVISED FEBRUARY 2011 www.ti.com ±1°C TEMPERATURE SENSOR with Series-R, η-Factor, and Automatic Beta Compensation Check for Samples: TMP431, TMP432 FEATURES DESCRIPTION • • • • • • • The TMP431 and TMP432 are remote temperature


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    TMP431 TMP432 SBOS441C TMP431, TMP432 transistor compatible 3660 marking code FA sot23 LCOS PDF

    Contextual Info: TM TMP431 TMP432 P432 www.ti.com SBOS441F – SEPTEMBER 2009 – REVISED AUGUST 2013 ±1°C Temperature Sensor with Series-R, η-Factor, and Automatic Beta Compensation Check for Samples: TMP431, TMP432 FEATURES DESCRIPTION • • • • • • • The TMP431 and TMP432 are remote temperature


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    TMP431 TMP432 SBOS441F TMP431, TMP431 TMP432 PDF

    Contextual Info: TM TMP431 TMP432 P432 www.ti.com SBOS441E – SEPTEMBER 2009 – REVISED DECEMBER 2012 ±1°C TEMPERATURE SENSOR with Series-R, η-Factor, and Automatic Beta Compensation Check for Samples: TMP431, TMP432 FEATURES DESCRIPTION • • • • • • • The TMP431 and TMP432 are remote temperature


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    TMP431 TMP432 SBOS441E TMP431, TMP431 TMP432 PDF

    led display module 32 16

    Abstract: IEC60038 3732 FMK coding gavazzi Faston 2.8 fk4c 3508 FK3C3616024
    Contextual Info: Du line Display for Digital Signals Types FK3C3, FK4C3 Fieldbus • • • • • Product Description Installationbus 8-, 16- or 32-channel status indicator 8-, 16- or 32-dot LED display NPN transistor output for loss of Dupline® carrier Horizontal or vertical panel mounting, DIN 43700


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    32-channel 32-dot 16-dot led display module 32 16 IEC60038 3732 FMK coding gavazzi Faston 2.8 fk4c 3508 FK3C3616024 PDF

    Contextual Info: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network


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    MUN2211/D MUN2211 MUN2212 MUN2213 PDF