TRANSISTOR C 2 SUB Search Results

TLP621

Abstract: MARKING toshiba TLP621-4 e152349 TLP621-4 11-5B2 E67349 TLP621-2
Contextual Info: TOSHIBA TLP621,TLP621-2#TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T L P 6 2 1 . T L P 6 2 1 -2 . T L P 6 2 1 -4 PROGRAMMABLE CONTROLLER A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor

TLP620

Abstract: TLP620-2 TLP620-4
Contextual Info: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN EPITAXIAL PLANAR TYPE DESCRIPTION O UTLINE DRAWING 2 S C 2 6 2 9 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design­ OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,

DMC50601

Contextual Info: DMC50601 Spice Parameter Reference Total pages page 1 1 Device symbol 6 Product name: DMC50601 Product type: Composite Transistor NPNx2 5 C 4 C TR 1 B TR 2 E B E 1 2 3 Parameters *$ .SUBCKT DMC50601 1 2 3 4 5 6 Q_Q1 6 5 1 QN1 Q_Q2 4 3 2 QN1 .MODEL QN1 NPN

nc1117

Abstract: DMC26402 rr22 BR165
Contextual Info: DMC26402 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 6 DMC26402 5 C 4 R1 Tr1 R2 Product type: Composite Transistor with Built-in Resistor NPNx2 E B B E R2 R1 1 2 Tr2 C 3 Parameters *$ .SUBCKT DMC26402 1 2 3 4 5 6 R_R11 2 IN1 22k

AVF300

Abstract: ASI10572
Contextual Info: AVF300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF300 is a high power Class C transistor, Designed for IFF/DME/TACAN Applications in 960-1215 MHz. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G • Internal Input/Output Matching Networks

ASI10573

Abstract: AVF350
Contextual Info: AVF350 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° The ASI AVF350 is a high power Class C transistor, designed for Avionics Applications in 1030-1090 MHz. ØD C E F G FEATURES: H • Internal Input/Output Matching Networks

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 6 3 0 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm FU

TRANSISTOR SE 135

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2 S C 2 0 8 6 is a silicon N P N epitaxial planar type transistor designed Dimensions in mm for R F power am plifiers in H F band m obile radio applications. FE A T U R ES

2SA1802

Abstract: 2SC4681
Contextual Info: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4681 MEDIUM POWER AMPLIFIER APPLICATIONS • • • • E x cellen t hFE L inearity : hFE 1 = 2 0 0 - 6 0 0 (V c e = 2 V , I c = 0.5 A) : h pE (2) = 140 (M in.) (V q e = 2 V , I c = 3 A)

AVF250

Abstract: ASI10571
Contextual Info: AVF250 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B The ASI AVF250 is a high power ClassC transistor designed for IFF/BME/TACAN applications in 1025-1150 MHz range. ØD C E F G H FEATURES:

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3017 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING Dimensions in mm 2 S C 3 0 1 7 is a silicon NPN epitaxial planar typ e transistor specifi­ cally designed for V H F p ow er amplifiers applications. FEATURES •

Contextual Info: 6N135, 6N136 www.vishay.com Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output FEATURES NC 1 8 C VCC • Isolation test voltages: 5300 VRMS A 2 7 B (VB) • TTL compatible C 3 6 C (VO) • High bit rates: 1 Mbit/s NC 4

ASI2302

Abstract: ASI10534
Contextual Info: ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG A The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MHz. 2 ØD B .060 x 45° CHAMFER 3 C E 1 G FEATURES: L • PG = 9.5 dB min. at 2 W / 2300 MHz

BLV25

Contextual Info: BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG A C The ASI BLV25 is a 28 V silicon NPN power transistor designed primarily for VHF FM broadcast transmitters. 1 2 2x Ø N FULL R D FEATURES: 3 • 28 V operation • PG = 10 dB at 175 W/108 MHz

2SC4413

Abstract: 2923 MARKING
Contextual Info: Ordering num ber: EN 2 9 2 3 No.2923 _ 2 S C 4 4 1 3 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp Applications F e a tu re s . Very small-sized package permitting the 2SC4413-applied sets to be made small and slim

Contextual Info: SFH6315T/SFH6316T/SFH6343T Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES SFH6315/6 NC 1 8 VCC • Surface mountable A 2 7 BVB • Industry standard SOIC-8 footprint C 3 6 C NC 4 5 E • Compatible with infrared vapor phase reflow

Contextual Info: SFH6135, SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES NC 1 8 C VCC • Isolation test voltage 5300 VRMS A 2 7 B (VB) • TTL compatible C 3 6 C (VO) • High bit rates: 1 MBit/s NC 4 5 E (GND) • High common mode interference immunity

SFH6136-X001

Abstract: SFH6136X001 Transistor 03 smd Optocoupler 701 8-SMD SMD TRANSISTOR MARKING 904 smd transistor RL
Contextual Info: SFH6135, SFH6136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES NC 1 8 C VCC • Isolation test voltage 5300 VRMS A 2 7 B (VB) • TTL compatible C 3 6 C (VO) • High bit rates: 1 MBit/s NC 4 5 E (GND) • High common mode interference immunity

by205

Abstract: BY205-400 diode by205 2n2222 transistor pin b c e by205 diode BUT11 D44H11 2N2222 2N2904 D45H11
Contextual Info: BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE TOP VIEW B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA

ASI2223-4

Abstract: ASI10531
Contextual Info: ASI2223-4 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG A The ASI 2223-4 is Designed for General Purpose Clacc C Applications up to 2.3 GHz. .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G H • Internal Input/Output Matching Networks

Contextual Info: IflE SILICONIX INC D Ô55473S 0 0 1 4 0 3 ^ 4 • BS208 fT S iB c a n ix JLW in c o rp o ra te d T -2-7-Z5 P-Channel Enhancem ent-M ode MOS Transistor PRODUCT SUMMARY TO-92 V BR DSS (V) fDS(ON) ( Í1 ) Id (A) PACKAGE -2 0 0 14 - 0 .2 TO-92 RM BOTTOM VIEW 1 DRAIN

A 4503

Contextual Info: SFH6345 www.vishay.com Vishay Semiconductors High Speed Optocoupler, 1 Mbd, 15 kV/ s CMR, Transistor Output FEATURES NC 1 8 VCC A 2 7 NC C 3 6 C NC 4 5 E • Direct replacement for HCPL 4503 • High-speed connection optocoupler without base • Isolation test voltage: 5300 VRMS