TRANSISTOR C 2 SUB Search Results

TLP621

Abstract: MARKING toshiba TLP621-4 e152349 TLP621-4 11-5B2 E67349 TLP621-2
Contextual Info: TOSHIBA TLP621,TLP621-2#TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T L P 6 2 1 . T L P 6 2 1 -2 . T L P 6 2 1 -4 PROGRAMMABLE CONTROLLER A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor

TLP620

Abstract: TLP620-2 TLP620-4
Contextual Info: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN EPITAXIAL PLANAR TYPE DESCRIPTION O UTLINE DRAWING 2 S C 2 6 2 9 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design­ OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,

C1016 transistor

Abstract: transistor c1016 1J51 13MM ATC100A PH3135-90S c330 TRANSISTOR 1J512
Contextual Info: an A M P company Radar Pulsed Power Transistor, 90W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-90S V2.00 Features • • • • • • • • .900 2 2 .8 6 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

BC pnp 200mA

Abstract: BC856 BC856A BC857 BC857A BC858 BC858A BC859 PNP -50V -200mA sot23 transistor BC SERIES
Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage

RN4983FS

Contextual Info: RN4983FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4983FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q1 Q2 C R1 C R1 fS6 R2 B R2 B E 6 2 5 3

220E-12

Abstract: 016385
Contextual Info: DMA20403 Reference Spice Parameter Total pages page 1 1 Device symbol 6 Product name: DMA20403 Product type: Composite Transistor PNPx2 5 4 E C TR 1 B B TR 2 C E 1 2 3 Parameters *$ *PART NUMBER: DMA20403 .SUBCKT DMA20403 1 2 3 4 5 6 Q_Q1 6 2 1 QN1 Q_Q2

transistor bc237 bc337

Abstract: BC238 NPN transistor download datasheet BC239 BC237 BC238 BC239 NPN transistor download datasheet BC238 datasheet transistor bc237 datasheet
Contextual Info: BC237.BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC

dmc26400

Contextual Info: DMC26400 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 6 DMC26400 5 4 C TR 1 Product type: Composite Transistor with Built-in Resistor NPNx2 B R21 E E B R 11 TR 2 C 1 2 3 Parameters *$ .SUBCKT DMC26400 1 2 3 4 5 6 R_R11 2 IN1 47k

RN4991FS

Contextual Info: RN4991FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4991FS Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Q2 C B C R1 R1 B fS6 E E 1 6 2 5 3 4 0.1±0.05

transistor smd marking BA RE

Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

ts 4141 TRANSISTOR smd

Abstract: CMBT2484
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

DMC50601

Contextual Info: DMC50601 Spice Parameter Reference Total pages page 1 1 Device symbol 6 Product name: DMC50601 Product type: Composite Transistor NPNx2 5 C 4 C TR 1 B TR 2 E B E 1 2 3 Parameters *$ .SUBCKT DMC50601 1 2 3 4 5 6 Q_Q1 6 5 1 QN1 Q_Q2 4 3 2 QN1 .MODEL QN1 NPN

nc1117

Abstract: DMC26402 rr22 BR165
Contextual Info: DMC26402 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 6 DMC26402 5 C 4 R1 Tr1 R2 Product type: Composite Transistor with Built-in Resistor NPNx2 E B B E R2 R1 1 2 Tr2 C 3 Parameters *$ .SUBCKT DMC26402 1 2 3 4 5 6 R_R11 2 IN1 22k

Contextual Info: DMC26105 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 4 5 DMC26105 C E E C TR 1 Product type: Composite Transistor with Built-in Resistor NPNx2 TR 2 B B R11 1 R 21 2 3 Parameters *$ .SUBCKT DMC26105 1 2 3 4 5 R_R11 1 IN1 10k

AVF300

Abstract: ASI10572
Contextual Info: AVF300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF300 is a high power Class C transistor, Designed for IFF/DME/TACAN Applications in 960-1215 MHz. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G • Internal Input/Output Matching Networks

vp 3082

Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082
Contextual Info: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,

Contextual Info: DMC26102 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 4 5 DMC26102 E C E C TR 1 Product type: Composite Transistor with Built-in Resistor NPNx2 TR 2 B B R 12 R 22 R 11 1 R 21 2 3 Parameters *$ .SUBCKT DMC26102 1 2 3 4 5 R_R11

Contextual Info: DMC26401 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 6 DMC26401 5 C R1 Tr 1 Product type: 4 R2 Composite Transistor with Built-in Resistor NPNx2 E B B E R2 R1 1 2 Tr2 C 3 Parameters *$ .SUBCKT DMC26401 1 2 3 4 5 6 R_R11 2 IN1 10k

Contextual Info: DMC26101 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 4 5 DMC26101 E C E C TR 1 Product type: Composite Transistor with Built-in Resistor NPNx2 TR 2 B B R 12 R 22 R 11 1 R 21 2 3 Parameters *$ .SUBCKT DMC26101 1 2 3 4 5 R_R11

Contextual Info: DMC26404 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 6 DMC26404 5 C R1 Tr 1 Product type: 4 R2 Composite Transistor with Built-in Resistor NPNx2 E B B E R2 R1 1 2 Tr2 C 3 Parameters *$ .SUBCKT DMC26404 1 2 3 4 5 6 R_R11 2 IN1 10k

transistor c101

Abstract: C102 M transistor 2SC40B c102 TRANSISTOR
Contextual Info: 2SC4725 / 2SC4082 / 2SC3837K 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S Transistors I High-Frequency Amplifier Transistor 18V, 1.5GHz 2S C 4 7 2 5 / 2S C 4 0 8 2 / 2 S C 38 37K •A b s o lu te maximum ratings (T a = 2 5 'C ) •F e a tu re s ) High I t . (fT= 1 .5 G H z )

ASI10573

Abstract: AVF350
Contextual Info: AVF350 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° The ASI AVF350 is a high power Class C transistor, designed for Avionics Applications in 1030-1090 MHz. ØD C E F G FEATURES: H • Internal Input/Output Matching Networks