TRANSISTOR C 2 SUB Search Results

TLP621

Abstract: MARKING toshiba TLP621-4 e152349 TLP621-4 11-5B2 E67349 TLP621-2
Contextual Info: TOSHIBA TLP621,TLP621-2#TLP621-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T L P 6 2 1 . T L P 6 2 1 -2 . T L P 6 2 1 -4 PROGRAMMABLE CONTROLLER A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor

TLP620

Abstract: TLP620-2 TLP620-4
Contextual Info: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode

BC250

Abstract: transistor bc250 transistor bc 102 BC 250 transistor bc 100
Contextual Info: BC250 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its D C current gain. Plastic package = J E D E C T O -9 2 T O -1 8 com patible The ca se is im pervious to light

Contextual Info: TO SHIBA TLP621,TLP621-2JLP621-4 TOSHIBA PHOTOCOUPLER T L P 621, T L P GaAs IRED & PHOTO-TRANSISTOR 6 2 1 -2 , T L P 6 2 1 -4 PRO G RAM M ABLE CONTROLLER A C /D C -IN PU T MODULE SOLID STATE RELAY The TOSHIBA TLP621, -2, and -4 consists of a photo-transistor

BR 9014

Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2629 NPN EPITAXIAL PLANAR TYPE DESCRIPTION O UTLINE DRAWING 2 S C 2 6 2 9 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm C 1 .5 M A X

TLP521

Abstract: TLP521-4 TLP521-1 TLP521-2 Toshiba tlP521 Photocoupler tlp521 Photocoupler TLP521-2GB TLP521 gr TLP521-1GB TLP521-2 gr
Contextual Info: TOSHIBA TLP521-1,TLP521-2,TLP521-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP521-1, TLP521-2, TLP521-4 PROGRAMMABLE CONTROLLERS A C /D C -IN P U T MODULE SOLID STATE RELAY The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design­ OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,

PH2729-65M

Contextual Info: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

Contextual Info: RN4985AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4985AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 2 5 3 4 R1 fS6 1. EMITTER1

Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage

C1016 transistor

Abstract: transistor c1016 1J51 13MM ATC100A PH3135-90S c330 TRANSISTOR 1J512
Contextual Info: an A M P company Radar Pulsed Power Transistor, 90W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-90S V2.00 Features • • • • • • • • .900 2 2 .8 6 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

BC pnp 200mA

Abstract: BC856 BC856A BC857 BC857A BC858 BC858A BC859 PNP -50V -200mA sot23 transistor BC SERIES
Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage

Contextual Info: RN4993FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4993FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q1 Q2 C B C R1 R1 B fS6 E 2 5 3 4 0.1±0.05

220E-12

Abstract: 016385
Contextual Info: DMA20403 Reference Spice Parameter Total pages page 1 1 Device symbol 6 Product name: DMA20403 Product type: Composite Transistor PNPx2 5 4 E C TR 1 B B TR 2 C E 1 2 3 Parameters *$ *PART NUMBER: DMA20403 .SUBCKT DMA20403 1 2 3 4 5 6 Q_Q1 6 2 1 QN1 Q_Q2

transistor bc237 bc337

Abstract: BC238 NPN transistor download datasheet BC239 BC237 BC238 BC239 NPN transistor download datasheet BC238 datasheet transistor bc237 datasheet
Contextual Info: BC237.BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC

Contextual Info: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon * “G” Lead Pb -Free COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code (See 2 Table Below) 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating

dmc26400

Contextual Info: DMC26400 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 6 DMC26400 5 4 C TR 1 Product type: Composite Transistor with Built-in Resistor NPNx2 B R21 E E B R 11 TR 2 C 1 2 3 Parameters *$ .SUBCKT DMC26400 1 2 3 4 5 6 R_R11 2 IN1 47k

RN4991FS

Contextual Info: RN4991FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4991FS Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Q2 C B C R1 R1 B fS6 E E 1 6 2 5 3 4 0.1±0.05

Contextual Info: DMC20601 Spice Parameter Reference Total pages page 1 1 Device symbol 6 Product name: DMC20601 Product type: Composite Transistor NPNx2 5 C 4 C TR 1 B TR 2 E B E 1 2 3 Parameters *$ .SUBCKT DMC20601 1 2 3 4 5 6 Q_Q1 6 5 1 QN1 Q_Q2 4 3 2 QN1 .MODEL QN1 NPN

Contextual Info: DME20501 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DME20501 Product type: Composite Transistor PNP+NPN 6 5 C 4 E TR 1 C B TR 2 B E 1 2 3 Parameters .SUBCKT DME20501 1 2 3 4 5 6 Q_Q1 6 2 1 QN1 Q_Q2 4 3 5 QN2 .MODEL QN1 PNP

DMC206E2

Contextual Info: DMC206E2 Spice Parameter Reference Total pages page 1 1 Device symbol 6 Product name: DMC206E2 Product type: Composite Transistor NPNx2 5 C 4 C TR 1 B TR 2 E B E 1 2 3 Parameters *$ .SUBCKT DMC206E2 1 2 3 4 5 6 Q_Q1 6 5 1 QN1 Q_Q2 4 3 2 QN1 .MODEL QN1 NPN

BF280

Contextual Info: DMC96406 Spice Parameter Reference Total pages page 1 1 Device symbol Product name: 6 DMC96406 5 4 C TR 1 Product type: Composite Transistor with Built-in Resistor NPNx2 B R21 E E B R 11 TR 2 C 1 2 3 Parameters *$ .SUBCKT DMC96406 1 2 3 4 5 6 R_R11 2 IN1 4.7k

transistor smd marking BA RE

Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)