TRANSISTOR BUK9508 Search Results

TRANSISTOR BUK9508 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR BUK9508 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor D 982 Abstract: gis 110 kv Contextual Info: Philips Semiconductors Product specification BUK9508-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very	OCR Scan	BUK9508-55 T0220AB transistor D 982 gis 110 kv	PDF
BUK9508-55 Abstract: BUK9608-55 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology	Original	OT404 BUK9608-55 BUK9508-55 BUK9608-55	PDF
BUK9508-55 Abstract: PHB125N06LT 4100us Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology	Original	OT404 PHB125N06LT BUK9508-55 PHB125N06LT 4100us	PDF
buk9508 Abstract: BUK9508-55 BUK9608-55 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology	Original	OT404 BUK9608-55 buk9508 BUK9508-55 BUK9608-55	PDF
45118 Abstract: TRANSISTOR SMD MARKING CODE RG F/45118 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology	Original	BUK9608-55 OT404 drT404 BUK9608-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9608-55 45118 TRANSISTOR SMD MARKING CODE RG F/45118	PDF
TRANSISTOR BUK9508 Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features	Original	O220AB OT404 BUK9508-55A BUK9608-55A O220AB TRANSISTOR BUK9508 BUK9508-55A BUK9608-55A transistor smd 412 BE	PDF
a6585 Abstract: smd transistor k 1540 BUK9508-55A Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features	Original	O220AB OT404 BUK9508-55A BUK9608-55A O220AB a6585 smd transistor k 1540	PDF
BUK9508-55 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	Original	O220AB BUK9508-55 BUK9508-55	PDF
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	OCR Scan	BUK9508-55 T0220AB	PDF
BUK950 Abstract: BUK9508-55 BUK9508-55A Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	Original	BUK9508-55 O220AB BUK9508-55 /\\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000819\081. \BUK9508-55 BUK950 BUK9508-55A	PDF
BUK9508-55 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	Original	O220AB BUK9508-55 BUK9508-55	PDF
S25 zener diode Contextual Info: Philips Semiconductors Product specification TrenehMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	OCR Scan	BUK9508-55 T0220AB IE-02 1E-05 S25 zener diode	PDF
transistor BUK9508 Abstract: BUK9508-55 BUK950 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has	Original	O220AB BUK9508-55 transistor BUK9508 BUK9508-55 BUK950	PDF
transistor BUK9508 Abstract: BUK9508-55B BUK95 Contextual Info: BUK9508-55B N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	BUK9508-55B transistor BUK9508 BUK9508-55B BUK95	PDF

K950 Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on B U K9508-55 T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t re n ch ’	OCR Scan	K9508-55 K950	PDF
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance	Original	PHP125N06LT, PHB125N06LT PHP125N06LT O220AB)	PDF
DIODE 542 SMD Abstract: transistor smd code marking nc g Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance	Original	PHP125N06LT, PHB125N06LT PHP125N06LT O220AB) OT404 PHB125N06LT PHP125N06LT DIODE 542 SMD transistor smd code marking nc g	PDF
buk9508 Abstract: sunstar BUK9508-55 PHB125N06LT PHP125N06LT BUK950855 Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance	Original	PHP125N06LT, PHB125N06LT PHP125N06LT szss20 SUNS8888 TEL010-81159046 FAX010-62543996 TEL021-28311762 FAX021-56703037 TEL029-81022619 buk9508 sunstar BUK9508-55 PHB125N06LT BUK950855	PDF
PHP125N06LT Abstract: BUK9508-55 PHB125N06LT Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance	Original	PHP125N06LT, PHB125N06LT PHP125N06LT BUK9508-55 PHB125N06LT	PDF
SMD fet MARKING 34 Abstract: transistor smd code marking nc g TRANSISTOR SMD mos fet Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance	Original	PHP125N06LT, PHB125N06LT PHP125N06LT O220AB) conventiPHB125N06LT PHP125N06LT PHB125N06LT SMD fet MARKING 34 transistor smd code marking nc g TRANSISTOR SMD mos fet	PDF
BUK9E08-55b Abstract: BUK9508-55B BUK9608-55B Contextual Info: BUK95/96/9E08-55B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.	Original	BUK95/96/9E08-55B OT404, OT226 BUK9E08-55b BUK9508-55B BUK9608-55B	PDF
BUK9508-55A Contextual Info: BUK95/9608-55A TrenchMOS logic level FET Rev. 03 — 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:	Original	BUK95/9608-55A BUK9508-55A O-220AB) BUK9608-55A OT404 OT404,	PDF
Contextual Info: D2 PA K BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	BUK9608-55A	PDF
BUK95 Abstract: BUK9608-55A Contextual Info: D2 PA K BUK9608-55A N-channel TrenchMOS logic level FET Rev. 04 — 31 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	BUK9608-55A BUK95 BUK9608-55A	PDF

TRANSISTOR BUK9508 Search Results

TRANSISTOR BUK9508 Result Highlights (5)

TRANSISTOR BUK9508 Datasheets Context Search

transistor D 982

BUK9508-55

BUK9508-55

buk9508

45118

TRANSISTOR BUK9508

a6585

BUK9508-55

BUK950

BUK9508-55

S25 zener diode

transistor BUK9508

transistor BUK9508

K950

DIODE 542 SMD

buk9508

PHP125N06LT

SMD fet MARKING 34

BUK9E08-55b

BUK9508-55A

BUK95