TRANSISTOR BL 100 Search Results

NPN Bipolar Transistor

Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
Contextual Info: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package

buk456

Contextual Info: N AUER PHILIPS/DISCRETE bRE ] • bbSa^Bl DDBQbBQ 5?B * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor 6bt

Abstract: DC/transistor 6bt
Contextual Info: N AMER PHILIPS/DISCRETE bbSB^Bl bTE ]> 0026345 Philips Semiconductors 050 « A P X Product Specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

BUK457-400B

Abstract: T0220AB
Contextual Info: PHILIPS IN TE RNA TI ONA L bSE J> Bl 7110flEb ODb413b Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband

2SB624

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.

Contextual Info: SAMSUNG ELE CTRONICS INC 42E D MMBTA92 Bl 7 ^ 4 1 4 2 OGDTDSS T Œ S M Û K PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Sym bol Rating Unit Collector-Base Voltage Collector-Emltter Voltage

Contextual Info: N AMER PHILIPS/DISCRETE bbSB^Bl DDSfiBbR 5T4 « A P X b'lE P Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

tca150c

Abstract: 1j99 SOLITRON
Contextual Info: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications

Contextual Info: SAMSUNG ELECTRONICS INC MEE D MPSA92/93 Bl 7 U 4 1 4 2 000=1070 0 H S M G K PNP EPITAXIAL SILICON TRANSISTOR -T -Z 7 -1 S HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage r MPSA92 : MPSA93 Collector-Emitter Voltage: MPSA92

Contextual Info: • bbSB^Bl DDESSMfl ^5T H A P X N AUER PHILIPS/DISCRETE BSP206 b7E D ; v P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.

bcx5316

Abstract: BCX5616
Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage

BUK553-60A

Abstract: BUK553-60B
Contextual Info: PHILIPS INTERNATIONAL bSE D Bl 7110fiSb D0b4aEb T5b • P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ G E N E R A L D E S C R IP T IO N N-cnannel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: Philips Semiconductors ^ bbSB^Bl 0 Q3 1 7 flfl b37 M APX Preliminary specification PNP HDTV video transistor BFQ295 — FEATURES N AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product

Contextual Info: • bbSB^Bl 0025137 440 APX N AUER PHI LIPS/DISCRETE b?E BFR30 BFR31 T> J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Planar epitaxial symmetrical junction field effect transistor in a microminiature plastic envelope. It is intended for low level general purpose amplifiers in thick and thin-film circuits.

Contextual Info: Philips Sem iconductors fl i bbSa^Bl 0 D3 2 EQ3 1 7 S APX Product specification PNP 4 GHz wideband transistor X3A-BFQ32 crystal ^ N Afl ER PHILIPS/DISCRETE b*lE D DESCRIPTION M ECHANICAL DATA PNP crystal used in BFQ32S SOT37 , BFQ149 (SOT89) and BFG31 (SOT223). Crystals are supplied as whole

bup4

Contextual Info: MAE D 6133167 DDDOmfl DD3 SEM EFA BL HIGH POWER DIE w - ^ ~ DIFFUSIO N SEMELAB DIFFUSED B Y SE M E F A B ISMLB LTD 1 G135 chip family The G 1 3 5 chip family is an NPN bipolar multiepitaxial planar transistor intended for applications requiring fast switching, low saturation, high power

Contextual Info: 2DI15OMA-O5O 150a ✓ < 7 - hv la ± / < r7—^ ) V i POWER TRANSISTOR MODULE : F e a tu re s • hFE/)''BL' High DC Current Gain • KA'"jSL' • 7 'J —:f c'i') • High speed sw itching K rti Including Free W heeling Diode Insulated Type • A p p lic a t io n s

Contextual Info: • bbSa^Bl □□25cm 754 ■ APX N AUER PHILIPS/DISCRETE PXTA77 b?E D J V SMALL-SIGNAL DARLINGTON TRANSISTOR PNP small-signal darlington transistors, housed in a microminiature envelope SOT89 . The complementary type is the P X T A 27 . Q U IC K R E F E R E N C E D A T A

C3656

Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
Contextual Info: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)

C1815 GR

Abstract: 2SC1815 NPN C1815 2SC1815-BL transistor c1815 2SC1815Y 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR
Contextual Info: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

C1815 GR

Abstract: 2SC1815 2SC1815GR 2sc1815 transistor micro transistor 2SC1815-GR 2SC1815-BL OF C1815 GR 2SC1815BL 2SC1815 GR
Contextual Info: MCC TM Micro Commercial Components 2SC1815 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

2SC1815

Abstract: 2SC1815GR 2SC1815-BL 2SC1815-GR 2SC1815BL 2SC1815 GR 2SC1815 Y 2SC1815O NPN C1815 C1815 bl
Contextual Info: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF

2sc1815gr

Abstract: 2SC1815-GR 2SC1815 2SC1815-BL 2SC1815BL 2SC1815 GR 2SC1815O c1815 marking transistor C1815
Contextual Info: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF