Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BJT 547 B Search Results

    TRANSISTOR BJT 547 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR BJT 547 B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    42019 AC

    Contextual Info: RF RF2127 MICRO •DEVICES MEDIUM POWER LINEAR AM PLIFIER Typical A pplications • DECT Cordless Applications Commercial and Consumer Systems • PCS Communication Systems Portable Battery Powered Equipment IL s < cc Product Description LU The RF2127 is a medium power, high efficiency linear


    OCR Scan
    RF2127 RF2127 1800MHz 1900MHz, 100mW RF2125 1000pF, 50WVDC 330pF. 42019 AC PDF

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


    Original
    2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp PDF

    NE68135

    Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
    Contextual Info: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o


    Original
    NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009 PDF

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original
    NE681 NE681 24-Hour 2SC3583 kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE68139 NE68118 PDF

    LB 1639

    Abstract: transistor TT 3043
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP


    OCR Scan
    NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B LB 1639 transistor TT 3043 PDF

    BJT characteristics

    Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
    Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original
    NE681 BJT characteristics NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE68100 NE68118 NE68119 PDF

    transistor "micro-x" "marking" 102

    Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
    Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e


    Original
    NE681 transistor "micro-x" "marking" 102 laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009 PDF

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


    Original
    NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor PDF

    Transistors BF 494

    Abstract: Transistor BJT 547 b transistor kf 469
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)


    OCR Scan
    NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 Transistors BF 494 Transistor BJT 547 b transistor kf 469 PDF

    lm 1723 cp equivalent

    Abstract: K 1723 isolated 4 to 20ma self-powered analog transmitter circuit USES OF BJT 547 2N3904 npn bjt transistor Bjt 547 BJT isolated Base Drive circuit BJT 2n3904 bjt 500v 74LVC125
    Contextual Info: DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops 1.0 General Description 2.0 Applications The DAC161P997 is a 16- bit ∑Δ digital-to-analog converter DAC for transmitting an analog output current over an industry standard 4-20 mA current loop. It offers 16-bit accuracy


    Original
    DAC161P997 16-bit 4-20mA DAC161P997 29ppm/ lm 1723 cp equivalent K 1723 isolated 4 to 20ma self-powered analog transmitter circuit USES OF BJT 547 2N3904 npn bjt transistor Bjt 547 BJT isolated Base Drive circuit BJT 2n3904 bjt 500v 74LVC125 PDF

    1820 0944

    Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s


    Original
    NE681 NE681 1820 0944 NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 PDF

    USES OF BJT 547

    Abstract: K 1723 2N3904 npn bjt transistor isolated 4 to 20ma self-powered analog transmitter circuit lm 1723 cp equivalent bjt 500v lm 35 sensor interface WITH ADC
    Contextual Info: DAC161P997 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Literature Number: SNAS515C DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops 1.0 General Description 2.0 Applications The DAC161P997 is a 16- bit ∑Δ digital-to-analog converter DAC for transmitting an analog output current over an industry standard 4-20 mA current loop. It offers 16-bit accuracy


    Original
    DAC161P997 DAC161P997 16-bit 4-20mA SNAS515C USES OF BJT 547 K 1723 2N3904 npn bjt transistor isolated 4 to 20ma self-powered analog transmitter circuit lm 1723 cp equivalent bjt 500v lm 35 sensor interface WITH ADC PDF

    kf 203 transistor

    Abstract: 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118
    Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL


    Original
    NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 kf 203 transistor 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE68100 NE68118 PDF

    transistor Bf 444

    Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original
    UPA801T NE856 100mA UPA801T 24-Hour transistor Bf 444 LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN S21E UPA801T-T1 PDF

    LM2936-3

    Contextual Info: DAC161P997 www.ti.com SNAS515D – JULY 2011 – REVISED MARCH 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog


    Original
    DAC161P997 SNAS515D DAC161P997 16-bit 4-20mA WQFN-16 LM2936-3 PDF

    Contextual Info: DAC161P997 www.ti.com SNAS515F – JULY 2011 – REVISED JANUARY 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog


    Original
    DAC161P997 SNAS515F DAC161P997 16-bit 4-20mA 29ppm/Â PDF

    Contextual Info: DAC161P997 www.ti.com SNAS515E – JULY 2011 – REVISED OCTOBER 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog


    Original
    DAC161P997 SNAS515E DAC161P997 16-bit 4-20mA 29ppm/Â PDF

    Contextual Info: DAC161P997 www.ti.com SNAS515D – JULY 2011 – REVISED MARCH 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog


    Original
    DAC161P997 SNAS515D DAC161P997 16-bit 4-20mA 29ppm/Â PDF

    Contextual Info: DAC161P997 www.ti.com SNAS515D – JULY 2011 – REVISED MARCH 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES 1 • • • • • • • • • • 2 16-bit Linearity Single-Wire Interface SWIF , with Handshake


    Original
    DAC161P997 SNAS515D DAC161P997 16-bit 4-20mA WQFN-16 PDF

    Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents Reference Design DAC161P997 SNAS515G – JULY 2011 – REVISED DECEMBER 2014 DAC161P997 Single-Wire 16-bit DAC for 4- to 20-mA Loops 1 Features 3 Description • • • •


    Original
    DAC161P997 SNAS515G DAC161P997 16-bit 20-mA 16-bit PDF

    80K-40

    Contextual Info: DAC161P997 www.ti.com SNAS515C – JULY 2011 – REVISED AUGUST 2011 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES 1 • • • • • 2 16-bit linearity Single-Wire Interface SWIF , with handshake Digital Data transmission (no loss of fidelity)


    Original
    DAC161P997 SNAS515C DAC161P997 16-bit 4-20mA LLP-16 16-bi 80K-40 PDF

    LB 1639

    Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA


    Original
    UPA801T NE856 100mA UPA801T LB 1639 BF 830 transistor UPA801T-T1-A S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem PDF

    BJT BF 331

    Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original
    NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018 PDF

    diode 0A70

    Abstract: GA05JT01-46
    Contextual Info: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity


    Original
    GA05JT01-46 GA05JT01 8338E-48 0733E-26 16E-10 021E-10 050E-2 diode 0A70 GA05JT01-46 PDF