TRANSISTOR BJT 547 B Search Results

42019 AC

Contextual Info: RF RF2127 MICRO •DEVICES MEDIUM POWER LINEAR AM PLIFIER Typical A pplications • DECT Cordless Applications Commercial and Consumer Systems • PCS Communication Systems Portable Battery Powered Equipment IL s < cc Product Description LU The RF2127 is a medium power, high efficiency linear

mj150* darlington

Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35

NE68135

Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o

2SC3583

Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

LB 1639

Abstract: transistor TT 3043
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP

BJT characteristics

Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e

transistor "micro-x" "marking" 102

Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

Transistors BF 494

Abstract: Transistor BJT 547 b transistor kf 469
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)

lm 1723 cp equivalent

Abstract: K 1723 isolated 4 to 20ma self-powered analog transmitter circuit USES OF BJT 547 2N3904 npn bjt transistor Bjt 547 BJT isolated Base Drive circuit BJT 2n3904 bjt 500v 74LVC125
Contextual Info: DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops 1.0 General Description 2.0 Applications The DAC161P997 is a 16- bit ∑Δ digital-to-analog converter DAC for transmitting an analog output current over an industry standard 4-20 mA current loop. It offers 16-bit accuracy

1820 0944

Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s

USES OF BJT 547

Abstract: K 1723 2N3904 npn bjt transistor isolated 4 to 20ma self-powered analog transmitter circuit lm 1723 cp equivalent bjt 500v lm 35 sensor interface WITH ADC
Contextual Info: DAC161P997 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Literature Number: SNAS515C DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops 1.0 General Description 2.0 Applications The DAC161P997 is a 16- bit ∑Δ digital-to-analog converter DAC for transmitting an analog output current over an industry standard 4-20 mA current loop. It offers 16-bit accuracy

kf 203 transistor

Abstract: 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

LM2936-3

Contextual Info: DAC161P997 www.ti.com SNAS515D – JULY 2011 – REVISED MARCH 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog

Contextual Info: DAC161P997 www.ti.com SNAS515F – JULY 2011 – REVISED JANUARY 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog

Contextual Info: DAC161P997 www.ti.com SNAS515E – JULY 2011 – REVISED OCTOBER 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog

Contextual Info: DAC161P997 www.ti.com SNAS515D – JULY 2011 – REVISED MARCH 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES DESCRIPTION • • • • • • • • • • The DAC161P997 is a 16- bit ∑Δ digital-to-analog

Contextual Info: DAC161P997 www.ti.com SNAS515D – JULY 2011 – REVISED MARCH 2013 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES 1 • • • • • • • • • • 2 16-bit Linearity Single-Wire Interface SWIF , with Handshake

Contextual Info: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents Reference Design DAC161P997 SNAS515G – JULY 2011 – REVISED DECEMBER 2014 DAC161P997 Single-Wire 16-bit DAC for 4- to 20-mA Loops 1 Features 3 Description • • • •

80K-40

Contextual Info: DAC161P997 www.ti.com SNAS515C – JULY 2011 – REVISED AUGUST 2011 DAC161P997 Single-Wire 16-bit DAC for 4-20mA Loops Check for Samples: DAC161P997 FEATURES 1 • • • • • 2 16-bit linearity Single-Wire Interface SWIF , with handshake Digital Data transmission (no loss of fidelity)

LB 1639

Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

BJT BF 331

Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

diode 0A70

Abstract: GA05JT01-46
Contextual Info: GA05JT01-46 Normally – OFF Silicon Carbide Junction Transistor Features Package •          RoHS Compliant 225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity