TRANSISTOR BJS 50 Search Results

2SK425

Abstract: NEC 2SK425 S-10 X17 marking SX50V 4511B1 N-Channel Silicon Junction Field Effect Transistor
Contextual Info: Junction Field Effect Transistor 2SK425 <BJSìli Hi « ffl N-Channel Silicon Junction Field Effect Transistor A u d io F re q u e n cy A m p lifier fl'JK E l/ P A C K A G E DIMENSIONS ftë / F E A T U R E U nit ; mm U High gn, t " f -i 1 - ì 'V ? u > ^ frû ; <

marking 724G

Abstract: specifications of scr rating package marking 724g 724G marking 3FW sot-23 specifications of scr diode vx marking sot23-6 SOT23-6 Marking .64 SP724 diode array
Contextual Info: Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection Pb RoHS GREEN SP724 Lead-Free/Green Series Description


vx marking sot23-6

Contextual Info: Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection Pb RoHS GREEN SP724 Lead-Free/Green Series Description


3SK151

Abstract: TRANSISTOR BJs 50
Contextual Info: 3SK151 SILICON N CHANNEL DUAL GATE MOS TYPE FIELD EFFECT TRANSISTOR Unit in mm T V TU N E R V H F M IX E R A P P LIC A T IO N S . V H F RF A M P LIF IE R A P P LIC A T IO N S . 4 0 .2 2.9 - 0.3 • High Conversion Fain: GQg = 24.5dB Typ. • Low Noise Figure

Contextual Info: SILICON N CHANNEL JUNCTION TYPE g S K FIELD EFFECT TRANSISTOR O 1 U nit in mm FM TUNER APPLICATIONS. VHF BAN D AMPLIFIER APPLICATIONS. Low Noise Figure : NF = 2.5dB Typ. ( f = 100MHz) High Forward Transfer Admittance : |yfs| = 9mS(Typ.) i 2 -EÖ M A X IM U M RATINGS (Ta = 25°C)

G8ms

Abstract: 4HL1
Contextual Info: 3SK225 SILICON N CHANNEL DUAL GATE MOS TYPE FE LD EFFECT TRANSISTOR U n it in mm T V T U N E R , V H F RF A M P L I F I E R A P P L I C A T I O N S . + 0.2 Z.9 -C13 F M T U N E R APPLIC A TIO NS. T V T U N E R , U H F RF A M P L I F I E R A P P L I C A T I O N S .

Contextual Info: TOSHIBA 3SK256 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3 S K2 5 6 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : = 0.015pF Typ. • Low Noise Figure

0025PF

Contextual Info: TOSHIBA 3SK153 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL D U A L GATE MOS TYPE 3 S K 1 53 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. TV TUNER VHF W ID E B A N D RF AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9 - Û 3 • Superior Cross Modulation Performance.

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

buv51

Contextual Info: 7^537 0056751 S • " T 7 3>'3>"13 S C S -T H O M S O N IIL U m * ! S G S-TH0MS0N B U V 51 30E D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIMES ■ LOW SW ITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA­ TION

3SK87

Abstract: 2SD20 Tma UHF
Contextual Info: NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 3SK87 RF AM P. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR DISK MOLD FEATURES P A C K A G E D IM E N S IO N S { U n it : m m • Suitable fo r use as RF a m plifier in UHF T V tuner.

2SC1009A

Abstract: CIL 108
Contextual Info: SILICON TRANSISTOR ELECTRON DEVICE 2SC1009A F M /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f j = 250 MHz TYP. 2.8 ± 0.2 • Low Output Capacitance: CQb = 1.8 pF TYP.

transistor marking t04

Abstract: NF 846 3SK225
Contextual Info: TOSHIBA 3SK225 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK225 TV TUNER, VHF RF AMPLIFIER APPLICATIONS. FM TUNER APPLICATIONS. TV TUNER, UHF RF AMPLIFIER APPLICATIONS. U nit in mm + 0.2 2.9 - Û3 1 • Superior Cross Modulation Performance.

marking BJG sot-23

Abstract: MMBF5484LT1 wire wound IR source MARKING YG SOT-23
Contextual Info: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE M M B F 5 48 4L T 1 Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit VDG 25 Vdc v GS r 25 Vdc Forward Gate Current 'G(f) 10 mAdc

TRANSISTOR 2n65s

Abstract: 2N65S 2N498 2N657 transistor 2N656 ad 303 transistor 2N856 2N497 2N656 transistor afr 22
Contextual Info: ➤ ✌ ✍✚ —. ‘“”-”” — MIL-s-19500/74E 17 Wtober l’dLi7 SUPSRSED2NT MIL-S-19500/74D 20 March 1964 See 6.3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, MEDIUM- POWER, TYPES 2N497, 2N498, 2N656, AND 2N657 This specification

BCW61FF

Abstract: BCs sot23
Contextual Info: BCW 61, BCX 71 PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking

BCX71

Abstract: marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN
Contextual Info: BCW61, BCX71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration

71 SOT-23

Contextual Info: BCW 61, BCX 71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking Pin Configuration

BCW61

Abstract: BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF
Contextual Info: BCW61, BCX71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Am plifier Transistor N-Channel MMBF4416LT1 M otorola Preferred Device 2 SOURCE 1 DRAIN MAXIMUM RATINGS Symbol Value Unit D ra in -S o u rc e Voltage VdS 30 V dc D ra in -G a te Voltage Vd G 30 V dc G a te -S o u rc e Voltage

bcx71

Contextual Info: BCW61, BCX71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration

BCX 71G E6327

Abstract: BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23
Contextual Info: BCW61, BCX71 PNP Silicon AF Transistor
For AF input stages and driver applications 3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration

TRANSISTOR XL08

Abstract: XL08 tr xl08 988u 2SD1579 T460
Contextual Info: NEC Ì Ì T / \ f S ilic o n Z T r a n s is to r 2SD1579 r N P N X tf 9 3 V 1-7 |J > “ h > - ^ 3 S 5 S ffiJS iftW * i t « , « J S * x iffl NPN Silicon Epitaxial Darlington Transistor Low Frequency Power Amplifier, Low Speed Switching Industrial Use 2SD1579ÌÌ 3 V ? 9 •

MMBF5486LT1

Abstract: 318C8 marking gfg 6f
Contextual Info: MOTOROLA Order this document by MMBF5486LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N-Channel 2 SOURCE MMBF5486LT1 M o to ro la P re fe rre d D e vic e MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol