TRANSISTOR BJ 115 Search Results

PH1012

Contextual Info: y H fe C O H Coming Attractions M a r t A M P com pany Avionics Pulsed Power Transistor, 70W, TACAN Format 1025-1150 MHz PH1012-70 V1.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor C om m on Base C onfiguration Broadband Class C O peration

marking CEZ

Abstract: bav99 nxp
Contextual Info: TPS65146 www.ti.com . SLVS869 – NOVEMBER 2008 Compact LCD Bias IC with LDO, VCOM Buffer and Reset Function

MOSFET SOT-23 marking code M2

Abstract: CDRH3D14 CDRH5D28 TPS65146RGER FYV0704S characteristics of zener diode in reverse bias
Contextual Info: TPS65146 www.ti.com . SLVS869 – NOVEMBER 2008 Compact LCD Bias IC with LDO, VCOM Buffer and Reset Function

Contextual Info: TPS65146 www.ti.com. SLVS869A – NOVEMBER 2008 – REVISED JUNE 2009 Compact LCD Bias IC with LDO, VCOM Buffer and Reset Function

Contextual Info: TPS65146 www.ti.com. SLVS869A – NOVEMBER 2008 – REVISED JUNE 2009 Compact LCD Bias IC with LDO, VCOM Buffer and Reset Function

2SK2078

Contextual Info: TOSHIBA 2SK2078 Field Effect Transistor Industrial A pplications Unit in m m Silicon N Channel MOS Type rc-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance ' Rds(on) = 1-0Q (Typ-) • High Forward Transfer Admittance

8050d transistor

Abstract: winbond powerspeech W523X W56000 equivalent of transistor 8050 winbond powerspeech W528X W528X 8050 TRANSISTOR equivalent w528 W562S10
Contextual Info: W562XXX DESIGN GUIDE 2-tone Melody+ADPCM Voice Synthesizer BandDirectorTM Family INTRODUCTION The W562xxx is a family of multi-engine speech synthesizers. These synthesizers incorporate part of the following parts into a single chip: a simple 4-bit uC core (including RAM, register file,

pa501

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only BURR-BROW NS OPA5Q1 n OPA5Q1 f^ n = APPLICATIONS • HIGH OUTPUT CURRENT: ±10A Peak • MOTOR DRIVER • WIDE POWER SUPPLY RANGE: +10 to +40V • SERVO AMPLIFIER • LOW QUIESCENT CURRENT: 2.6mA • SYNCRO DRIVER

transistor BJ 102 131

Contextual Info: PBSS4021PT 20 V, 3.5 A PNP low VCEsat BISS transistor Rev. 01 — 29 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

25 uF capacitor

Abstract: RAYTHEON RMPA61800
Contextual Info: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT

transistor kf 469

Abstract: transistor HAN 819 diode "jyw" JYW SOT KF 469 JYW diode r778 bjt ce amplifier transistor KF 507 transistor d 2389
Contextual Info: ¥ ti¡%HEWLETT ft "KM PACKARD High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Surface Mount Plastic Package/SOT-343 SC-70 Outline 4T • Transition Freque ncy

FMC7G10US60

Contextual Info: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

Contextual Info: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMC6G10US60

Abstract: FMC7G10US60
Contextual Info: IGBT FMC6G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

1SNA607222R0700

Abstract: F0004 60810-1 1SVR405613R1100 1SVR405622R9000 1SVR405613R8200
Contextual Info: Interface relays and optocouplers Product group picture 5 5/1 ABB | Catalog Electronic Products and Relays 2013/2014 | 2CDC 110 004 C0209 Interface relays and optocouplers Table of contents Interface Relays and Optocouplers Pluggable interface relays 5/3 Table of contents

Contextual Info: MOS M n f î - Ï Ü B & 'W MOS Field Effect Power Transistor 2SK1491 N MOS FET i i f 2SK1491 ! i , N - < , X -i -y f- > £ f l M OS F E T T * 9 , ¡ t î J U 'i & X 4 -y -f > m m VnM , : mm DC- D C 3 > ' < — ? iZ - M iiÊ 'V - i'o ft & o Vdss = 250 V, I D DC)= ±25 A

TESLA KY 703

Abstract: TESLA NU 73 service-mitteilungen servicemitteilungen 2 PN 66 145 silizium diode "service-mitteilungen" Tesla Scans-048 Leipzig
Contextual Info: SERVICE-MITTEILUNGEN V EB IN D U ST R IE V E R T R IE B RU N D FU N K UND FE R N SE H E N r a d i o -television Als Weiterentwicklung des bekannten Rundfunkgerätes SELECT wird aus der Sozia­ listischen Republik Rumä­ nien der Heimempfänger R O Y A L AUSGABE:

2SK993

Abstract: KJE 17 transistor sje 360 jb 5531 KJE transistor transistor sje 360 KJE transistor KJE F108 diode JE 33 F108
Contextual Info: MOS M O S Field Effect Pow er Transistor N ^ * ; i ^ \ 0r7 - MOS FET x i f f l 2 S K 9 9 3 là , N :* J ' f f i J f r ô M S y i / Z ' f # 7 K , M O S F E T T", 5 V H * I C < , y y ’c o f t m i z M M T t o i t V gs = 10 V, R DS o„ ^ 0 . 2 5 Q f ^D S (o n )

Contextual Info: LMV116,LMV118 LMV116/LMV118 Low Voltage, 45MHz, Rail-to-Rail Output Operational Amplifiers with Shutdown Option T ex a s In s t r u m e n t s Literature Number: SNOSA87A LM V116/LMV118 Semiconductor Low Voltage, 45MHz, Rail-to-Rail Output Operational Amplifiers with Shutdown Option

TLC271

Abstract: TLC271 equivalent
Contextual Info: TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS D 3 1 3 7 , N O V E M B E R 1 9 8 7 - R E V IS E D J U N E 1991 D, JG, OR P PAC KAGE Input Offset Voltage Drift. .Typically 0.1 |iV/Month, Including the First 30 Days u TOP VIEW

photo transistor til 78

Abstract: Transistor AC 187 transistor tl 187 TL 187 TRANSISTOR NPN TIL188-4 AC 187 npn transistor TO 1 E65085 Til 160 Phototransistor Til 78 TIL187-4
Contextual Info: T IL 1 87 1 THRU TIL1B7-4 TIL188 1 THRU TIL188-4 AC INPUT OPTOCOUPLERSfOPTOISOLATORS SOOS012A D29BO, JANUARY 19 8 7 —HEVISÊD JULY 1989 AC Signal Input • Gallium Arsenide Dual-Diode Infrared Source Optically Coupled to a Silicon N-P-IV Darlinaton Phototransistor

Contextual Info: u n m . TECHNOLOGY _ LT1509 Power Factor and PWM Controller F€OTUR€S D C S C R IP T IO n • PFC and PWM Single Chip Solution ■ Synchronized Operation up to 300kHz ■ 99% Power Factor over 20:1 Load Current Range ■ Current Mode PWM

tlc271

Abstract: TLC271 equivalent thyristor tic 126 Tlc2711
Contextual Info: TLC271, TLC271A, TLC271B LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS _ SLO S090B- NOVEMBER 1987 - REVISED AUGUST 1996 Input Offset Voltage D rift. . . Typically 0.1 iV/Month, Including the First 30 Days D, JG, OR P PACKAGE (TOP VIEW