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    TRANSISTOR BFR96 Search Results

    TRANSISTOR BFR96 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR BFR96 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFR96

    Abstract: BFR96 TRANSISTOR transistor bfr96
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers


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    Transistor C G 774 6-1

    Abstract: C G 774 6-1 transistor a 1941 a/Transistor C G 774 6-1 RLF100-11/12/Transistor C G 774 6-1
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor The BFR96 transistor uses the sam e s ta te -o f-th e -a rt microwave transistor chip which features fine -line geometry, ion-im planted arsenic em itters and gold top metallization. This transistor is intended for low -to -m e dium power amplifiers


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    transistor bfr96

    Abstract: BFR96 BFR964 RF NPN POWER TRANSISTOR 3 GHZ 200 watts motorola J50 datasheet for transistor bfr96 BFR96 TRANSISTOR BFR961 RF TRANSISTOR 1.5 GHZ BFR96 motorola
    Contextual Info: MOTOROLA Order this document by BFR96/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor BFR96 The BFR96 transistor uses the same state–of–the–art microwave transistor chip which features fine–line geometry, ion–implanted arsenic emitters and gold


    Original
    bfr96/dbfr96devicebfr96/dtransistor bfr96+8bfr964rf npn power transistor 3 ghz 200 wattsmotorola j50datasheet for transistor bfr96bfr96 transistorbfr961rf transistor 1.5 ghzbfr96 motorola PDF

    BFR96

    Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n H igh -Frequ en cy Thransistor The BFR96 transistor uses the same state-of-the-art microwave transistor chip which features fine-line geometry, ion-implanted arsenic emitters and gold top metallization. This transistor is intended for low-to-medium power amplifiers


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    bfr96 PDF

    lc 945 p transistor NPN

    Abstract: BFR96S
    Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device


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    hhs3r31d031a15bfr96sbfq32s+2bfr96s/02lc 945 p transistor npn PDF

    BFR96

    Abstract: BFR96 philips BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFQ32 4 20 mA 1992 transistor bfr96 philips bfq32 BFR96$ a 933 transistor
    Contextual Info: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor DESCRIPTION VllDfiEb D04577b lfl7 « P H I N SbE D PHILIPS INTERNA TIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


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    BFR96S

    Abstract: 6852 d TRANSISTOR lc 945 p transistor BFr96s philips bfr96s scattering lc 945 p transistor NPN transistor a 1707 lc 945 transistor B 557 PNP TRANSISTOR transistor B 764
    Contextual Info: Prod uct specification Philips S em iconductors -T < S /'2 - 3 c NPN 5 GHz wideband transistor HILIPS INTERNATIONAL DESCRIPTION 5LE 711002b BFR96S 0043704 253 H P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device


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    BFR96

    Abstract: BFR96 philips Transistor 933 Transistor s44 transistor bfr96 transistorbfr96
    Contextual Info: Philips Semiconductors Product specification - 3 /- . Z 3 NPN 5 GHz wideband transistor DESCRIPTION 711002b 004577b 1A7 • P H I N 5bE D PHILIPS INTERNATIONAL BFR96 PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


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    transistor bfr96

    Abstract: BFR96 philips BFR96 BFR96 LOW POWER TRANSISTOR for transistor bfr96 BFR96 TRANSISTOR a 933 transistor BFR96 pins resistance BFQ32 Transistor 933
    Contextual Info: ^ 5 3 ^ 3 1 Philips Semiconductors 0031ÛÔ7 b fll M APX Product specification BFR96 NPN 5 GHz wideband transistor N AMER PHILIPS/DISCRETE DESCRIPTION □TE D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


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    bbs3131bfr96on4487bfq32+8transistor bfr96bfr96 philipsbfr96 low power transistorfor transistor bfr96bfr96 transistora 933 transistorbfr96 pins resistancetransistor 933 PDF

    transistor bfr96

    Abstract: SL 100 NPN Transistor BFR96 BFR96 LOW POWER TRANSISTOR transistor 936 M8B916 BFR96 pins resistance BFR96 TRANSISTOR BFQ32 a 933 transistor
    Contextual Info: Philips Sem iconductors Product specification ^ NPN 5 GHz wideband transistor PHILIPS DESCRIPTION 711DÔ2t> 0 0 4 5 7 7 b Sfc.E D INTERNATIONAL BFR96 lfl7 « P H I N PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


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    BFR96 philips

    Contextual Info: ^ 5 3 ^ 3 1 Philips Semiconductors 0 0 3 1 flfl7 b fll M APX Product specification BFR96 NPN 5 GHz w ideband transistor N AflER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF wideband amplifiers such as


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    bfr96bfr96/02on4487hbs3t31+1bfr96 philips PDF

    lc 945 p transistor

    Abstract: lc 945 p transistor NPN lc 945 transistor BFR96S 6852 d TRANSISTOR s5D transistor SL 100 NPN Transistor transistor B 764 BFr96s philips FP 801
    Contextual Info: □□31ÖRS 7 s ö P hilips Sem ico n d u cto rs IAPX Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE D ESC R IP T IO N hTE T> PINNING NPN transistor in a plastic SO T37 envelope primarily intended for MATV applications. The device


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    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    Contextual Info: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband


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    bfq32bfq32/02bfr96bbs3t31 PDF

    BFQ32S

    Abstract: BFR96S
    Contextual Info: Philips Semiconductors 53^31 ^ 0031544 543 M AP X Product specification PNP 4 GHz wideband transistor ^ «p BFQ32S - n AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It Is Intended for use in UHF applications such as broadcast


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    bfq32sbfr96s PDF

    Contextual Info: Philips Semiconductors b bS 3T 31 0 031544 543 APX Product specification PNP 4 GHz wideband transistor BFQ32S N AMER PHILIPS/DISCRETE DESCRIPTION blE D • PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast


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    philips bfq32

    Abstract: BFQ32
    Contextual Info: Product specification Philips Semiconductors 7 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION 5bE » ^ 3 / - 2 . 3 BFQ32 711üfl5b G045420 41D H P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband


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    BFQ32

    Abstract: for transistor bfr96 MB8347 philips bfq32 BFR96 philips transistor bfr96 BFR96 UBB345
    Contextual Info: Philips Semiconductors ^33^31 G031S31 'HS IA P X Product specification PNP 4 GHz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b^E D PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband


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    Contextual Info: BFR96T ViSHAY _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features


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    bfr96t20-jan-99 PDF

    Contextual Info: ViSH A Y ▼ BFR96TS _ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications RF amplifier up to GHz range specially for wide band antenna amplifier.


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    bfr96ts20-jan-99 PDF

    philips bfq32

    Abstract: BFQ32 BFR96 philips PNP transistor 263 transistor bfr96 BFR96 BFR96 pins resistance GHz PNP transistor BFQ-32
    Contextual Info: Product specification Philips Sem iconductors 7=v3/ -JZ3 PNP 4 GHz wideband transistor PH IL IPS INTERNATIONAL DESCRIPTION BFQ32 7 1 1 0 0 2 b Ü Ü 4 S M 2 Ü 41D H I P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband


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    bfr96ts

    Contextual Info: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


    Original
    bfr96tsd-7402522-jan-01 PDF

    BFR96TS

    Contextual Info: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure


    Original
    bfr96tsd-7402522-jan-01 PDF