TRANSISTOR BFR 36 Search Results

TRANSISTOR BFR 36 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR BFR 36 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Transistor BFR 35 Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91 Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package	OCR Scan	fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 35 Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91	PDF
BFR106 Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor Contextual Info: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	OT-23 Q62702-F1219 900MHz Dec-11-1996 BFR106 Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor	PDF
BFr pnp transistor Abstract: BFR106 Transistor BFR 80 BFR 30 transistor Contextual Info: BFR 106 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR 194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	VPS05161 OT-23 Oct-26-1999 BFr pnp transistor BFR106 Transistor BFR 80 BFR 30 transistor	PDF
Contextual Info: BFR 35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking	Original	VPS05161 OT-23 900MHz Nov-30-2000	PDF
Transistor BFr 99 Abstract: Transistor BFR 96 transistor 2sc 548 Contextual Info: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed	OCR Scan	fl235bOS Transistor BFr 99 Transistor BFR 96 transistor 2sc 548	PDF
bfr 547 Abstract: Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39 Contextual Info: —— SSC D • - fl235bOS 0QQ4bfc>2 3 M S I E G NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF T BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 200 mil package similar to TO 120. It is outstanding for a low noise	OCR Scan	fl235bOS bfr 547 Transistor BFR 93 PS229 Transistor BFR 97 Transistor BFr 99 BFR14C Q62702-F543 S-12 Transistor BFR 96 Transistor BFR 39	PDF
Contextual Info: BFR 35AP NPN Silicon RF Transistor 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 0.5 mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 35AP	Original	VPS05161 OT-23 Oct-13-1999	PDF
Q62702-F938 Abstract: IS21E K2112 Contextual Info: SIEMENS BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA Q62702-F938 1=B O GEs LU II CM BFR 35AP CO II ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	Q62702-F938 OT-23 IS21e K2112	PDF
2gma Abstract: Q62702-F938 121-996 Contextual Info: BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration	Original	OT-23 Q62702-F938 S21/S12\| Dec-12-1996 2gma Q62702-F938 121-996	PDF
30227 Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23 Contextual Info: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration	Original	OT-23 Q62702-F1062 900MHz Dec-13-1996 30227 Transistor BFT 10 Q62702-F1062 w1s sot23	PDF
Contextual Info: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage	Original	MBT2222ADW1T1G MBT2222ADW1T1/D	PDF
Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration	OCR Scan	Q62702-F1062 OT-23 BFT92 H35bD5 900MHz	PDF
MMBT4124LT1G Contextual Info: MMBT4124LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage	Original	MMBT4124LT1G MMBT4124LT1/D MMBT4124LT1G	PDF
Marking W1s Abstract: bft92 w1s sot23 Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Type Marking Ordering Code	OCR Scan	OT-23 Q62702-F1062 BFT92 900MHz Marking W1s bft92 w1s sot23	PDF

1N914 Abstract: MBT2222ADW1T1G Contextual Info: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage	Original	MBT2222ADW1T1G MBT2222ADW1T1/D 1N914 MBT2222ADW1T1G	PDF
Contextual Info: MMBT4124LT1G General Purpose Transistor NPN Silicon Features http://onsemi.com • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage	Original	MMBT4124LT1G MMBT4124LT1/D	PDF
sot-23 Transistor MARKING CODE ZG Abstract: ZG SOT23 transistor marking zg Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz OT-23 Q62702-F1298 sot-23 Transistor MARKING CODE ZG ZG SOT23 transistor marking zg	PDF
transistor marking R2s Abstract: SC-75 bfr 135 Contextual Info: BFR 93AT NPN Silicon RF Transistor Preliminary data 3 For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	VPS05996 SC-75 900MHz Dec-16-1998 transistor marking R2s SC-75 bfr 135	PDF
BFR 965 Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705 Contextual Info: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!	Original	Q62702-F1315 OT-23 BFR 965 BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705	PDF
Q62702-F1494 Contextual Info: BFR 280W NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	900MHz OT-323 Q62702-F1494 Dec-11-1996 Q62702-F1494	PDF
MJE 280 power transistor Abstract: Q62702-F1298 bfr280 Contextual Info: BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	900MHz OT-23 Q62702-F1298 Dec-11-1996 MJE 280 power transistor Q62702-F1298 bfr280	PDF
Contextual Info: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7.5GHz F = 1.5dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	900MHz Q62702-F1298 OT-23 D155144 flE35fc D12514S	PDF
30227 Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23 Contextual Info: BFT 92 PNP Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz at collector currents up to 20 mA Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s	Original	VPS05161 OT-23 900MHz Oct-25-1999 30227 IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23	PDF
BFT92 Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23 Contextual Info: BFT92 PNP Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz at collector currents up to 20 mA Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration	Original	BFT92 VPS05161 900MHz Jul-16-2001 BFT92 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23	PDF

TRANSISTOR BFR 36 Search Results

TRANSISTOR BFR 36 Result Highlights (5)

TRANSISTOR BFR 36 Datasheets Context Search

Transistor BFR 35

BFR106

BFr pnp transistor

Transistor BFr 99

bfr 547

Q62702-F938

2gma

30227

MMBT4124LT1G

Marking W1s

1N914

sot-23 Transistor MARKING CODE ZG

transistor marking R2s

BFR 965

Q62702-F1494

MJE 280 power transistor

30227

BFT92