TRANSISTOR BF370 Search Results

BF370

Abstract: 2108 npn transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF370 NPN medium frequency transistor Product specification Supersedes data of 1997 Jul 11 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BF370 FEATURES PINNING

BF370

Abstract: SC-43A transistor BF370 transistor NPN BF370
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF370 NPN medium frequency transistor Product specification Supersedes data of 1999 Apr 21 2004 Nov 08 Philips Semiconductors Product specification NPN medium frequency transistor BF370 FEATURES PINNING

BF370R

Contextual Info: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION

BF370R

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage

BF370

Abstract: SC-43A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BF370 NPN medium frequency transistor Product data sheet Supersedes data of 1999 Apr 21 2004 Nov 08 NXP Semiconductors Product data sheet NPN medium frequency transistor BF370 FEATURES PINNING • Low current max. 100 mA

BF370R

Contextual Info: Transys Electronics L I M I T E D NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 4.5 Emitter Base Voltage IC

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BF370

Contextual Info: N AMER PHILIPS/DISCRETE ME » • bbS3«i31 0027bôü TOO H A P X oro/u J L SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope, intended fo r use in large-signal handling i.f. pre­

bf370

Contextual Info: N AMER PHILIPS/DISCRETE bTE D I I bbS3^31 DD27b8D TOO APX o ro /u SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope, intended for use in large-signal handling i.f. pre­ amplifiers of TV receivers in combination with surface acoustic wave filters.

BF370

Abstract: ai 972
Contextual Info: DISCRETE SEMICONDUCTORS 1999 Apr 21 Product specification Supersedes data of 1997 Jul 11 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BF370 PINNING FEATURES • Low current max. 100 mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF370 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. COLLECTOR 0.5 W (Tamb=25℃) 2. BASE Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 40 V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BF370 TRANSISTOR NPN 1.COLLECTOR FEATURES z Low Saturation Medium Current Application z High Transition Frequency 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF370 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.5 W（Tamb=25℃） Collector current ICM : 0.1 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range

BF370

Contextual Info: BF370 BF370 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. COLLECTOR 0.5 W (Tamb=25℃) 2. BASE Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃

TRANSISTOR BC 448 smd

Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors

993 395 pnp npn

Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Contextual Info: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10

BF370

Abstract: transistor BF370
Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistors FEATURES BF370; BF370R PINNING • Low current max. 100 mA PIN • Low voltage (max. 15 V). DESCRIPTION PIN BF370 APPLICATIONS • IF pre-amplifiers of television receivers. DESCRIPTION

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

Philips TdA3619

Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Contextual Info: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

sc74750

Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Contextual Info: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes