TRANSISTOR BF 939 Search Results
TRANSISTOR BF 939 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA011 | Toshiba Electronic Devices & Storage Corporation | PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini | Datasheet | ||
| TPCP8513 | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet |
TRANSISTOR BF 939 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IC 4556
Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
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a23sbos62702-fg--14ic 4556+5 | |
TRANSISTOR G13
Abstract: c 939 transistor bf 4556 d BF939
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q62702-ffl235b050q04557transistor g13+4 | |
transistor BF 939Contextual Info: SIEMENS PNP Silicon High-Voltage Transistor • • • • • BF 623 Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary type: BF 622 NPN Type Marking Ordering Code (tape and reel) |
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q62702-f1053ot-89transistor bf 939 | |
BF199
Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
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m3d186bf199sca55117047/00/02/pp8+4 | |
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
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cb-f36c2sd16422sd21822sc4489+11 | |
dual-gateContextual Info: DISC RETE S E M IC O N D U C TO R S ATA S & flE E T BF 9 0 9 A; B F 9 0 9 A R Dual-gate MOS-FETs P relim inary specification File under D iscrete S em iconductors, SC 07 Philips Semiconductors 1998 M ar 06 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification |
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dual-gate | |
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6 | |
MBC964Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BFQ591 NPN 7 GHz wideband transistor Preliminary specification 2002 Jan 02 Philips Semiconductors Preliminary specification NPN 7 GHz wideband transistor BFQ591 PINNING FEATURES • High power gain PIN |
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m3d109bfq591mbk514sca73+2 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BFQ591 NPN 7 GHz wideband transistor Preliminary specification 2001 Dec 03 Philips Semiconductors Preliminary specification NPN 7 GHz wideband transistor BFQ591 PINNING FEATURES • High power gain PIN |
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m3d109bfq591mbk514sca73+1 | |
MARKING PQ* SOT89
Abstract: BFQ591 philips MATV amplifiers DIN45004B transistor fp 1016 equivalent transistor c 243
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m3d109bfq591sca74613516/03/pp12+5 | |
MT 5388 BGA
Abstract: Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
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12-03/ds/dl/bay/10kcorp-psg-00123mt 5388 bgabroadcom 7019+8 | |
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Contextual Info: BFQ591 NPN 7 GHz wideband transistor Rev. 04 — 2 October 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact |
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bfq591 | |
10GHz oscillator
Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
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m3d124bfu510sca73125104/00/04/pp12+9 | |
4 pin dual-emitter
Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
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m3d124bfu540sca73125104/00/04/pp12+7 | |
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V 7271 U
Abstract: 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E
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hfa310210ghzv 7271 u421506+8 | |
BFQ591
Abstract: transistor 09013 NPN 09013 NPN DIN45004B philips MATV amplifiers
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bfq591e20071002transistor 09013 npn09013 npn+2 | |
4 pin dual-emitter
Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN
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m3d124bfu540sca73125104/00/04/pp12+10 | |
BFU510
Abstract: SiGe POWER TRANSISTOR
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m3d124bfu510sca75613516/03/pp16+1 | |
BFU540
Abstract: SiGe POWER TRANSISTOR
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m3d124bfu540sca75613516/04/pp16+1 | |
transistor marking codes list
Abstract: BFG325W
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bfg325w/xrot343rtransistor marking codes listbfg325w | |
TRANSISTOR L2
Abstract: transistor bf 194 E C B
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bfg325/xrot143rtransistor l2transistor bf 194 e c b | |
transistor l2Contextual Info: BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features • ■ ■ ■ High power gain |
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bfg310/xrot143rtransistor l2 | |
A7 NPN EPITAXIAL
Abstract: Philips FA 145 BFG310W/XR BFG310W
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bfg310w/xrot343ra7 npn epitaxialphilips fa 145+1 | |
B.A date sheet karachi
Abstract: BF547W marking code e2 m1b marking BF547 SCD31
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bf547wot323bf547mbc870+5 | |