TRANSISTOR BF 235 Search Results

transistor BF 235

Abstract: BF968 transistor bf 968
Contextual Info: asE D • û 235 b a s a a c m s a a 1 ■ jg sieg ■ PNP Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BF 968 D - for input stages up to 900 M H z BF 968 is a PNP silicon UHF planar transistor with passivated surface in a low-capacitance

CPH5705

Abstract: transistor BF 235
Contextual Info: CPH5705 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 512.6 f IS 390.0 BF 0.994 NF VAF 13.0 IKF 1.086 10.8 f ISE 2.499 NE 5.00 BR 1.00 NR 20.8 VAR 100.9 m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value

ULN2003NA

Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Contextual Info: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

15C02MH

Contextual Info: 15C02MH SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 130.0f NF 1 IKF 230.0m NE 2 NR 1 235.0m IKR NC 2 IRB 30.00m RE 92.00m XTB 1.5 XTI 3 VJE 660.0m TF 300p VTF 5 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

transistor 663a

Contextual Info: ANALO G ► D E V IC E S Tri-Mode: +3.3 V, +5 V, Adjustable Micropower Linear Voltage Regulators ADM663A/ADM666A* FEATURES Tri-M ode Operation 3.3 V, 5 V Fixed or +1.3 V to +16 V Adjustable Low Power CMOS: 9 jiA max Quiescent Current High Current 100 mA Output

transistor JSW

Abstract: diode JSW FL 576-K125
Contextual Info: 6DI30M-050 30 a Outline Drawings POWER TRANSISTOR MODULE ‘ F e a tu re s • ifi5hFE High DC Current Gain • iS i S TA'V’f-'sif High Speed Switching : A p p lic a tio n s • 9 General Purpose Inverter • Uninterruptible Power Supply • N C lflM S tM

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

BFG425W

Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
Contextual Info: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

BFP520F

Contextual Info: SIEGET
45 BFP520F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1
For oscillators up to 15 GHz
Transition frequency fT = 45 GHz TSFP-4

Contextual Info: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

CIL TRANSISTOR

Abstract: BF 331 TRANSISTORS CIL 167 bf 333 transistor transistor BF 236 33T4 CIL TRANSISTOR 343 CIL373 CIL 331 JYs transistor
Contextual Info: METALtCAN & EPOXY TRANSISTORS • CONTINENTAL DEVICE INDIA 32E D ■ 53033=14 00000CH 5 ■ 71 PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min IC VCE mA - Volts hFE at bias min/max ICM mA max PTA mW max Cob ts ICBO VCE sat fT

CIL TRANSISTOR

Abstract: BF 331 TRANSISTORS bf 333 transistor JYs transistor TO 106 transistor CIL TRANSISTOR 343 transistor case To 106 transistor CG 391 33T4 CIL TRANSISTOR 331
Contextual Info: METALtCAN & EPOXY TRANSISTORS • CONTINENTAL DEVICE INDIA 32E D ■ 53033=14 00000CH 5 ■ 71 PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min IC VCE mA - Volts hFE at bias min/max ICM mA max PTA mW max Cob ts ICBO VCE sat fT

BF 331 TRANSISTORS

Abstract: CIL TRANSISTOR 331 CIL TRANSISTOR TRANSISTOR TO-106 CIL 167 CIL 331 CIL331 00000CH CIL TRANSISTOR 343 transistor Bf 331
Contextual Info: METALtCAN & EPOXY TRANSISTORS • CONTINENTAL DEVICE INDIA 32E D ■ 53033=14 00000CH 5 ■ 71 PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min IC hFE at bias VCE ICM PTA ICBO VCE sat fT mA - Volts mA mW MA Volts MHz max

KRT 30

Abstract: DIODE 8236 LT 8236 30H3 EV1277 T151 T760 T930
Contextual Info: EV1277 30a : Outline Drawings s < r7 — b 7 > Z > Z 9 * i > a . — iU POWER TRANSISTOR MODULE • it # : F e a tu re s • AflHJE High Voltage • "7 'J — >J > ? ? ' ( # — Kl*3i0c Including Free W heeling Diode Insulated Type • W & ffc ■ f f lj S s : A p p lic a tio n s

5252 F led driver 4pin

Abstract: RTC BASED AUTOMATIC STREET LIGHT CONTROLLER free tc35301bp TCD1208P TC35133 TC35306p tc35133f TA31075AS TC35305P TC35301
Contextual Info: SYSTEM CATALOG FOR FACSIMILES Facsimile System Block Diagrams G3 / B4 Facsimiles Mechanical Block Diagram Compatibility of Toshiba Semiconductors for Facsimile Use Facsimile use can be divided into business use, in which facsimiles have become indispensable in the

Contextual Info: BFP 182W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

IC 2272

Abstract: Q62702-F1502
Contextual Info: BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code