BF 145 transistor
Abstract: transistor bf 968 transistor bf 600 BF968 Q62702-F612 BF 500 transistor
Contextual Info: E5E D • fl235bOS aoaMSaa 1 ■ SIEG ■ PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 968 D - fo r in p u t stages up to 9 0 0 M H z BF 9 6 8 is a PNP silicon UHF planar transistor w ith passivated surface in a low-capacitance
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t0119q62702-f612bf 145 transistortransistor bf 968+3transistor bf 600bf968bf 500 transistor
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BF967
Abstract: Q62702-F503 ft950 transistor 624
Contextual Info: 1 29E D aa3st»as oogmstô 3 SIEG st-/r - BF 967 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF for input stages up to 900 M H z BF 967 is a PNP silicon UHF planar transistor with passivated surface in a low-capacitance plastic package similar to T 0 119 50 B 3 DIN 41867 . The transistor is particularly suitable
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00g4sbf967t0119q62702-f503+5fi23stq04s7ci100mhzft950transistor 624
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transistor BF 235
Abstract: BF968 transistor bf 968
Contextual Info: asE D • û 235 b a s a a c m s a a 1 ■ jg sieg ■ PNP Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BF 968 D - for input stages up to 900 M H z BF 968 is a PNP silicon UHF planar transistor with passivated surface in a low-capacitance
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62702-f61225iq2transistor bf 235bf968+1transistor bf 968
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2f5 transistor
Contextual Info: 1 29E D aa3st»as oogmstô 3 SIEG ^ j t - r r BF 967 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF fo r in p u t stag e s up to 9 0 0 M H z BF 967 is a PNP silicon UHF planar transistor with passivateci surface in a low-capacitance plastic package similar to T 0 119 50 B 3 DIN 41867 . The transistor is particularly suitable
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BF569
Abstract: BF569R
Contextual Info: BF 569 / BF 569 R TELEFUNKEN Semiconductors Silicon PNP Planar RF Transistor Applications For selfoscillating RF mixter stages 1 2 1 3 3 2 94 9280 BF569 Marking Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 95 10527 BF569R Marking Plastic case (SOT 23R)
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transistor marking zg
Abstract: BF579 BF579R HF transistor
Contextual Info: BF 579 / BF 579 R TELEFUNKEN Semiconductors Silicon PNP Planar HF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 2 1 3 3 2 94 9280 BF579 Marking Plastic case SOT 23
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bf579bf579rd-74025transistor marking zg+1hf transistor
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transistor bf 198
Abstract: BF 212 transistor BF198 TFK 214 TFK 544
Contextual Info: BF 198 Silizium-NPN-Planar HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: G eregelte FS-ZF-Verstärkerstufen in Em itterschaltung Applications: C ontrolled video IF am p lifier stages in com m on em itter configuration Besondere Merkmale: Features:
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transistor bf 198bf 212 transistorbf198tfk 214+1tfk 544
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MARKING G2
Abstract: BF550 BF550R
Contextual Info: BF 550 / BF 550 R TELEFUNKEN Semiconductors Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 2 1 3 3 2 94 9280 BF550 Marking: G2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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transistor bf 198
Abstract: BF198 transistor bf 494 RF Transistor BF198 BF 494 C A495 A-04 Q62702-F354 A0349-3
Contextual Info: esc o • asBSbüs üdgmmmid a NPN Silicon RF Transistor SIEM EN S IS IE 6 _ 25C. 0 4 4 4 Ó - - A K T IEN 6ESELLSC H A F - _ _ BF198 T ~ 3 1~ i f for gain-controlled TV IF amplifier stages BF 198 is an NPN silicon planar radio-frequency transistor in TO 92 plastic package
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23slds0dq444fcbf198q62702-f354+8qqq4450transistor bf 198transistor bf 494rf transistor bf198bf 494 ca495a-04a0349-3
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a02 Transistor rf
Abstract: transistor bf 198
Contextual Info: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package
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a23stig50dg444bbf198023sfe+3qqq4450a02 transistor rftransistor bf 198
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telefun
Abstract: transistor Bf 979 BF979
Contextual Info: BF 979 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 1 BF979 Marking
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transistor Bf 981
Abstract: transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor BF775 transistor marking zg bf 695
Contextual Info: BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency
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bf775d-74025transistor bf 981transistor bf 257+7transistor 0235 bfbf 671transistor bf 236transistor bf 324bf 273 transistortransistor marking zgbf 695
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transistor bf 970
Abstract: BF970
Contextual Info: BF 970 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF oscillator and mixer stages. Features DHigh gain DLow noise 3 2 1 BF970 Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage
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transistor 152 M
Contextual Info: 2N1986 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLAN A R E P ITAXIAL - LF amplification A m plification BF - Switching Commutation v CBO 50V h21E 150m A 60 - 240 V CEsat (30 mA/3 mA) 0,6 V max. Maximum power dissipation Case TO-39 — See outline drawing CB-7 on last pages
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Transistor D 799
Abstract: transistor marking zg BF799 Transistor K 799
Contextual Info: BF 799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features D High power gain D Low noise figure 1 2 3 94 9280 BF799 Marking: G2 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter
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bf799d-74025transistor d 799transistor marking zg+1transistor k 799
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transistor bf 184
Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
Contextual Info: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958
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5109bo-92atransistor bf 184pnp vhf transistor+5to50 transistortransistor bf 509bf 914 transistorbf 184 transistortransistor bf 451
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BEL 100N TRANSISTOR
Abstract: bel 187 transistor BEL 100p transistor bel 187 NPN TRANSISTOR transistor BEL 187 transistor bf 198 bel 188 transistor bel 100n transistor npn bel 188 transistor pnp BEL187
Contextual Info: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts mm hFE at bias mm ^max. le mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 — —
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27min37min35friin50min+1140minbel 100n transistorbel 187 transistorbel 100p transistorbel 187 npn transistortransistor bel 187transistor bf 198bel 188 transistorbel 100n transistor npnbel 188 transistor pnpbel187
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bel187
Abstract: bel 187 transistor BEL 100N TRANSISTOR BEL188 transistor bel 187 bel 187 NPN TRANSISTOR bel 188 transistor BEL100N bel 187 transistor npn PN3904
Contextual Info: BHARAT ELEK/SEHICOND DI 47E D • 1 4 3 5 3 ‘iä G O G G Q 1 G Tifi ■ B E LI I VCE Si Device No VCEO Volts min VCBO Volts mm V eb o Volts min hFE at b<as mm /max. Ic mA VCE Volts 1CM mA max P lo t mW ICBO nA max typ S a t V otts typ Cob ts p l- ns typ
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27min37min35friin50min+1140minbel187bel 187 transistorbel 100n transistorbel188transistor bel 187bel 187 npn transistorbel 188 transistorbel100nbel 187 transistor npnpn3904
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BEL 100N TRANSISTOR
Abstract: bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187 BEL 100N bel 187 NPN TRANSISTOR bel 188 transistor pnp TRANSISTOR BC 187
Contextual Info: VCE Si Device No VCEO VCBO Volts min V otts mm V eb o Volts min hFE at bias mm /max. Ic mA VcE V o lts 1 CM mA max P lo t mW max ICBO mA typ S at V otts typ pF typ ts ns typ N f <j B typ — — — TO 237 — — — TO 92 250 — — — TO 92 130 —
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27min37min35friin50min+1140minbel 100n transistorbel 187 transistorpn3904bel 188 transistorbel 187 transistor npnbel 187bel 100nbel 187 npn transistorbel 188 transistor pnptransistor bc 187
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BFW 10 fet
Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)
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0000fco-72jo-106o-72g+12to-02melf-002bfw 10 fettransistor bf 494bf 494 transistorbfw 10 a fettransistor bf 184transistor bf 253transistor bf 241bf 184 transistortransistor bf 495transistor bf 254
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op amp 741 model Spice
Abstract: op07 spice model differential pair op amp LT1013 substitution LT1012 LT1012A uA 741 op LT1012D LT1024 OP-07
Contextual Info: I II W 'Z -J É r i - ^2□ I II I I I I I Ï À Ï- _ L7 JEC H r JO t ii □ □ □ □ □ r~ DESIGN NOTES Number 28 in a series from Linear Technology Corporation November, 1989 A SPICE Op Amp Macromodel for the LT1012 Walt Jung Introduction The Boyle, et al.1, SPICE macromodel for op amps has proven
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lt1012lt1013dn28-2op amp 741 model spice+8op07 spice modeldifferential pair op amplt1013 substitutionlt1012aua 741 oplt1012dlt1024op-07
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TSSO28
Abstract: transistor 3006 TUA 6010 XS tv 6110 BB535 ALL BAND TV TUNER pin TUA6010XS
Contextual Info: APPLICATIONS ICs for Consumer Electronics Rolf Laurien New tuner ICs TUA 6010/6110: One-chip solutions for slimline tuners Tuners for television sets, video recorders and satellite receivers have become progressively smaller in recent years. Most recently, the
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6010xtsso28transistor 3006tua 6010 xs+4tv 6110bb535all band tv tuner pintua6010xs
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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3866sbf247 equivalentbrochage des circuits integrestriac gk+6transistor bc 564bc547eti small signal fet cataloguebcw 91 transistorsescosescosem
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transistor BUX 83
Abstract: bux c st bux bux 47 MARKING BUX bc 201 transistor st bux c Marking 47 transistor BUX transistor k 2718
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • â^SQQ^b OOCHSÔ1 BUX 47 • BÜX 47 A TTiiLSiPIUlMKIiM electronic CrMin*üKhnotoö*«* Silicon NPN Power Transistors ^ ^ Applications: Switching mode power supply, inverters, motor control, and relay driver Features: • In triple diffusion technique
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15a3dintransistor bux 83bux cst bux+7bux 47marking buxbc 201 transistorst bux cmarking 47transistor buxtransistor k 2718
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