pin configuration transistor bd140
Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139
|
Original
|
bd136bd138bd140bd140-10+16tip73btip74tip74atip74btip75tip75apin configuration transistor bd1402sd669 equivalentbuv44bd140 equivalent transistormje15020bd140 equivalentbd250c equivalentrca1222n6045 npn power darlingtontransistor bd 136
|
PDF
|
BD138
Abstract: bd140 Complement BD136 bd139 Complement transistor BD140 BD135 BD137 BD139 BD140 power transistor bd136
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD135, BD 137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol C ollector Base Voltage :B D 1 3 6 : BD138 : BD140 C ollector E m itter Voltage : BD 136
|
OCR Scan
|
bd136/138/140bd135bd137bd139+7bd136bd138bd140bd140 complementbd139 complementtransistor bd140power transistor bd136
|
PDF
|
|
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80
|
OCR Scan
|
ksd135/137/139bd140bd137bd139+1bd135
|
PDF
|
BD139
Abstract: b*137 bd139 Complement power transistor bd137 power transistor bd139 transistor bd137 BD137 bd137 Transistor BD135 BD136
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 VcBO : BD137 : BD139 C ollector E m itter Voltage : BD135
|
OCR Scan
|
ksd135/137/139bd136bd140bd135+9bd137bd139o-126b*137bd139 complementpower transistor bd137power transistor bd139transistor bd137bd137 transistor
|
PDF
|
BD139
Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
Contextual Info: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data
|
OCR Scan
|
bd13940pep80pepot-32+10o-66ptransistor bd 139bd 139 transistorbd139-6bd 139 nbd 139-16transistor bd 242bd 3055bd139 amplifierbd npn transistors
|
PDF
|
microwave oscillator
Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Contextual Info: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n HIGH fS
|
OCR Scan
|
3/w23ne568200mwne56855+10nes6851microwave oscillatortransistor code 458 0552sc23391357 transistor nec2sc2342transistor code 2sc2342bd 743 transistornec 1357ne56854
|
PDF
|
TRANSISTOR BC 136
Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available
|
OCR Scan
|
t-33-17din125a15a3dintransistor bc 136+9transistor bd 140transistor bd 126bd 140 transistor16bd136transistor bc 138transistor 138transistor bd 136bd 139 transistortransistor bd 711
|
PDF
|
8d136
Abstract: transistor BD 141 transistor BD 110 BD140 BD13S transistor bd 138 transistor 136 138 140 transistor BD 140 BD 140 transistor Transistors bd 133
Contextual Info: 2sc D • aaasb o s 0004337 3 PIMP Silicon Transistors IS IE ß r ÖA337 /7 D* SIEMENS AKTIEN6ESELLSCHAF — BD 136 BD 138 BD 140 For A F d riv e r and o u tp u t stag es o f m e d iu m p erfo rm a n c e BD 1 3 6 , BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 1 2 6
|
OCR Scan
|
8d136bd138bd140bd136+11023sbqsq0qh341bd13sb0138transistor bd 141transistor bd 110transistor bd 138transistor 136 138 140transistor bd 140bd 140 transistortransistors bd 133
|
PDF
|
transistor BD 141
Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126
|
OCR Scan
|
bd136bd138bd1406235bqs+1transistor bd 141
|
PDF
|
transistor bd 126
Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available
|
OCR Scan
|
din41869din125a15a3dintransistor bd 126+9transistor bd 139transistor bd 135bd139transistor bc 137transistor bd 137bd 139 nbd 106 transistortransistor bc 136transistor bd 711
|
PDF
|
transistor BD 378
Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
Contextual Info: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.
|
OCR Scan
|
bd136bd138bd140ot-32+4transistor bd 378bd140 pnp transistortransistors bd136bd136 n
|
PDF
|
10 watt power transistor bd
Abstract: transistor BD 140 transistor BD 136 bd140 transistor bd 138 BD 140 transistor transistor BD 139 bd 140 transistor BD 135 motorola Bd140
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 BD140-10 P lastic Medium Power Silicon PNP Transistor . . . designed for use as audio am plifiers and drivers utilizing complementary or quasi complementary circuits. • • DC Current Gain — hpg = 40 Min @ l c = 0.15 Adc
|
OCR Scan
|
bd136bd138bd140bd140-10+910 watt power transistor bdtransistor bd 140transistor bd 136transistor bd 138bd 140 transistortransistor bd 139bd 140transistor bd 135motorola bd140
|
PDF
|
BD140 application circuits circuits
Abstract: transistor bd136 transistor BD140 BD140 BD140-10 bd140 pin out transistor BD 140 BD136 MOTOROLA TRANSISTOR BD138
Contextual Info: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc
|
Original
|
bd136/dbd140 application circuits circuitstransistor bd136transistor bd140+7bd140bd140-10bd140 pin outtransistor bd 140bd136motorola transistorbd138
|
PDF
|
BD139 MOTOROLA
Abstract: BD139 h parameters BD139 transistor BD135 BD135 transistor BD 139 transistor U/25/20/TN26/15/850/power transistor bd135 BD137 parameters bd139 pin out BD135
Contextual Info: MOTOROLA Order this document by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc
|
Original
|
bd135/dbd139 motorolabd139 h parametersbd139+7transistor bd135bd135 transistorbd 139 transistoru/25/20/tn26/15/850/power transistor bd135bd137 parametersbd139 pin outbd135
|
PDF
|
|
|
BD 139 transistor
Abstract: TRANSISTOR BD 136 BDI36 BD140 BD140-10 BDI38 BD 140 transistor 136 138 140 BD136 transistor bd 138
Contextual Info: MOTOROLA Order this document by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 BD140 B D 140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. •
|
OCR Scan
|
bd136/dbd136bd138bd140+9o-225aabd 139 transistortransistor bd 136bdi36bd140-10bdi38bd 140transistor 136 138 140transistor bd 138
|
PDF
|
transistor BD 246
Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
Contextual Info: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A
|
OCR Scan
|
bd135bd136std-750ot-32+1340pep80pepo-66ptransistor bd 246transistor bd 135transistor bd 242bd135 switchbd139bd139-6transistor bdtransistor bd 246 btransistor bd 249bd135 texas instruments
|
PDF
|
transistor BD 246
Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Contextual Info: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A
|
OCR Scan
|
bd136bd135mil-std-750ot-32+1240pep80pepo-66ptransistor bd 246transistor bd 249transistor bd 240bd 35 transistortransistor bd 242bd139-6transistor bd 239transistor bd245transistor bd 241
|
PDF
|
RCA 40872
Abstract: RCA 40636 transistor rca 40872 transistor 40872 transistor NPN Transistor 2N3055 darlington RCA 40595 transistor 40872 rca rca 40636 rca8203a 40636
Contextual Info: M O N O LITH IC D A R LIN G TO N T Y P E S H E R M E T IC lc • 8 A max. P j - 3 6 W max. TO-66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 P L A S T IC lt z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. P y ■ 100 W max. (TO-3) lc •= - 1 0 A max.
|
OCR Scan
|
pj-36wito-66136x1362n6337+152n65342n65352n65362n65372n6385rca 40872rca 40636 transistorrca 40872 transistor40872 transistornpn transistor 2n3055 darlingtonrca 40595 transistor40872 rcarca 40636rca8203a40636
|
PDF
|
BDX 241
Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Contextual Info: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A
|
OCR Scan
|
bd137bd138mil-std-750ot-32+1140pep80pepbdx 241transistor 246transistor bd 240transistor bd 246transistor bd 137bd139-6transistor bd 249transistor bd 242transistor bd245
|
PDF
|
BD 266 S
Abstract: BD140 pnp transistor BD 136 to225a transistor bd 140 -16 BD136 transistor 136 138 140 BD136.6
Contextual Info: M OT O R C L A SC XSTRS/R 15E 0 § F b3b725M G0ÖM70S 3 | BD136,-6,-10,-16 BD138,-6,-10,~16 BD140,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 1.S AMPERE POWER TRANSISTOR • . . designed for use as audio amplifiers and drivers utilizing
|
OCR Scan
|
b3b725mbd136bd138bd140+9o-225aa0gflm70tbd 266 sbd140 pnp transistorbd 136to225atransistor bd 140 -16transistor 136 138 140bd136.6
|
PDF
|
transistor BU 5027
Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im
|
OCR Scan
|
kt315indikatoransteuerung02136/gasz1016+9transistor bu 5027transistor kt 816transistor sd 5024j 5027-rbu 5027kt 817 transistortransistor ku 607mda 2020rft e 355 d
|
PDF
|
8D139
Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
Contextual Info: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126
|
OCR Scan
|
fl23sbqs135/bd137/bdbd135+11b0137b0139bd137bd139bd1368d139transistor bd 137transistor bd 378transistor bd 137-10transistor a110d106-v2
|
PDF
|
BD 139 N
Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to
|
OCR Scan
|
023sfc0qq4332q62702-d106q62702-d106-v1+8q62702-d106-v2q62702-d106-v3q621758fl23sb05q00m33bbd 139 ntransistor bd 141bd139
|
PDF
|
transistor d325
Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Contextual Info: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector
|
OCR Scan
|
053sbos00043l3433/bd435/bd+16437/bd439/bd441/bdfl23sfc---0436rbd433transistor d325transistor bd 437transistor bd 141bd pnp433 transistord217 siemensbo 410transistor bdtransistor 433 mhzd285
|
PDF
|