TRANSISTOR BC640 Search Results

bc640

Abstract: transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp
Contextual Info: BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

transistor C639

Abstract: transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table
Contextual Info: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistor series Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement Philips

BC640

Abstract: BC635
Contextual Info: BC635 & BC640 General Purpose Transistor Features: • High performance, low frequency devices. • NPN/PNP Silicon Planar Epitaxial Transistors. • Driver Stages of Audio Amplifier Application. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33

BC640

Abstract: bc636 BC638 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter

BC640

Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
Contextual Info: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636

c64016

Abstract: transistor c64016 transistor c640 npn bc640 bcp53 bcx53 AH MARKING SOT223 transistor C640 to92 transistor C640 CBC640 c640 transistor ah sot223
Contextual Info: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 07 — 27 June 2007 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BC640-16 BPL TO-92 BCE Driver Stages of Audio Amplifier Application.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC640 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.83 W (Tamb=25℃) 2. COLLECTOR Collector current -1 A ICM: Collector-base voltage -100 V V(BR)CBO:

C64016

Abstract: transistor c64016 transistor C640 to92 c640 pnp bc640 bcp53 bcx53 transistor c640 pnp bc640 transistor c640 npn
Contextual Info: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 06 — 13 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips

AH MARKING SOT223

Abstract: CBC640 BCP53 transistor c640 npn BC639 BC640 BCP53-10 BCP56 BCX53 BCX56
Contextual Info: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA

SMD Marking Code 43a

Abstract: BC640 SPICE model transistor C640 to92 marking code DG SMD Transistor TRANSISTOR SMD MARKING CODE 723 BC640 smd A2 SMD CODE MARKING SOT89 TRANSISTOR SMD MARKING CODE 9339 BC640,116 TRANSISTOR SMD MARKING CODE LF
Contextual Info: BC640; BCP53; BCX53 80 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA

bc640

Abstract: transistor bc640 transistor c 458 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR applications of Transistor BC640
Contextual Info: BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units V VCER Collector-Emitter Voltage at RBE=1KΩ

transistor BC640

Abstract: transistorbc640 BC640
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC640 ISSUE 1 – SEPT 93 FEATURES * 1 Amp continuous current * Ptot= 800 mW E C B TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC640 IS S U E 1 - S E P T 93_ FEATU RES * 1 A m p continuous current * Ptot= 800 mW ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER Collector-Base Voltage VCBO VALUE UNIT -80 V V Collector-Emitter Voltage

BC640

Contextual Info: BC640 BC640 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.83 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -1 A Collector-base voltage -100 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC640 ISSUE 1 - SEPT 93_ FEAT U RES * 1 A m p continuous current * Ptot= 800 mW ABSOLUTE MAXIMUM RATINGS. SYM BO L PA R A M ET E R V ALU E UNIT V V V CBO -80 Collector-Em itter Voltage V CEO

Bc636

Abstract: BC640 639 TRANSISTOR PNP BC638 pnp bc636 transistor
Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • C o m p le m e n t to BC635/637/639 ABSOLUTE MAXIMUM RATINGS Ta= 25°C 1 Sym bol Characteristic C o llecto r Emitter Voltage: BC636 a t R BE = 1Kohm : BC638 V cE R : BC640

639 TRANSISTOR PNP

Abstract: bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement
Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

BC635

Abstract: BC636 BC638 BC640
Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage

Contextual Info: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :