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    TRANSISTOR BC337 40 Search Results

    TRANSISTOR BC337 40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR BC337 40 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC337

    Abstract: TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor BC337 PINNING FEATURES


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    M3D186 BC337 BC327. MAM182 SCA63 115002/00/03/pp8 BC337 TRANSISTOR BC337 NPN general purpose transistor BC337 BC337-40 NPN transistor TRANSISTOR BC337-25 PNP BC337-25 PNP transistor BC33716 TRANSISTOR BC337-25 BC337 pnp transistor bc337-25 Philips PDF

    BC337

    Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
    Contextual Info: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J


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    BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25 PDF

    bc337 transistor datasheet

    Abstract: transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337 BC338
    Contextual Info: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC328 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage


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    BC337/338 BC337/BC328 BC337 BC338 BC338 bc337 transistor datasheet transistor bc337 npn OF TRANSISTOR BC337 bc337 fairchild BC337 NPN transistor datasheet BC337 PDF

    OF TRANSISTOR BC337

    Abstract: bc337 fairchild BC337 BC338
    Contextual Info: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC337/338 BC327/BC328 BC337 BC338 OF TRANSISTOR BC337 bc337 fairchild BC337 BC338 PDF

    bc337

    Abstract: bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor
    Contextual Info: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor PDF

    BC337

    Abstract: bc337 fairchild BC338
    Contextual Info: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC338 PDF

    BC338C

    Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 328 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage


    OCR Scan
    BC337/338 BC337/BC BC337 BC338 BC338C PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR NPN TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25℃) 3. EMITTER Collector current 0.8


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    BC337 BC338, BC338 BC337 BC338 100mA 300mA PDF

    BC337 pnp transistor

    Abstract: BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC327 BC328 BC338 BC337 hfe
    Contextual Info: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC338 BC337 hfe PDF

    BC337

    Abstract: BC337 pnp transistor BC327 to92 OF TRANSISTOR BC337 bc33 bc338 complementary BC337 hfe OF TRANSISTOR BC338 BC337 leads BC327
    Contextual Info: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 BC337 pnp transistor BC327 to92 OF TRANSISTOR BC337 bc33 bc338 complementary BC337 hfe OF TRANSISTOR BC338 BC337 leads PDF

    BC337 pnp transistor

    Abstract: BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327 BC327 BC328
    Contextual Info: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327 PDF

    Contextual Info: BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC327/BC328 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Symbol Characteristic Collector Emitter Voltage


    OCR Scan
    BC337/338 BC327/BC328 BC337 BC338 100mA 300mA PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage


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    BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA, PDF

    BC337 npn

    Abstract: transistor bc337 datasheet BC337 BC33
    Contextual Info: DC COMPONENTS CO., LTD. BC337 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter


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    BC337 500mA, 300mA, 100mA, 100MHz BC337 npn transistor bc337 datasheet BC337 BC33 PDF

    BC327

    Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
    Contextual Info: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25


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    BC327 -800mA. -100mA) BC337. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC327 BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note PDF

    BC337

    Abstract: BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327
    Contextual Info: SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC327. N E K G


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    BC337 800mA. 100mA) BC327. 00TTER 100mA 500mA, 300mA 100MHz BC337 BC337 45V 800mA NPN Transistor BC327 45V 800mA PNP Transistor BC327 45V 800mA NPN Transistor BC337 45V 800mA f 630 TRANSISTOR hFE-100 BC327 PDF

    Contextual Info: SynSEMi T O -92 Plastic Encapsulate Transistors SYMSEMI SEMICONDUCTOR BC3 37, -16, -25,-40 n p n transistor BC3 38, -16, -25,-40 FEATURES Power dissipation PCM : 0.625 W (Tamb=25 °C) Collector current Icm • 0.8 A Collector base voltage V cbo : BC337


    OCR Scan
    BC337 BC338 270TYP 050TYP PDF

    BC337

    Abstract: BC337 hfe BC338 BC338 TRANSISTOR TRANSISTOR BC338 bc337 transistor BC337 NPN transistor BC337 NPN transistor datasheet transistor BC337-16 TRANSISTOR BC337-40
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR NPN FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1. COLLECTOR Symbol 2.BASE VCBO VCEO Parameter Collector-Base Voltage


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    BC337/BC338 BC337 BC338 100uA, 100mA 300mA 500mA, BC337 BC337 hfe BC338 BC338 TRANSISTOR TRANSISTOR BC338 bc337 transistor BC337 NPN transistor BC337 NPN transistor datasheet transistor BC337-16 TRANSISTOR BC337-40 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR(NPN ) BC338,-16,-25,-40 TO—92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current ICM : 0.8 A Collector-base voltage


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    BC337ï BC338ï BC337 BC338 100MHz 270TYP 050TYP PDF

    bc338

    Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC327 bc338 PDF

    bc337 fairchild

    Abstract: BC337 pnp transistor
    Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC32ugh bc337 fairchild BC337 pnp transistor PDF

    BC307

    Abstract: 2001 PNP TO-92
    Contextual Info: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC327/328 BC337/BC338 BC327 BC328 BC32Product BC32716TA BC307 2001 PNP TO-92 PDF

    BC337

    Abstract: QW-R201-039 OF TRANSISTOR BC337
    Contextual Info: UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC327/328 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    BC337/338 BC327/328 BC337 BC338 QW-R201-039 BC337 OF TRANSISTOR BC337 PDF

    BC337 NPN transistor datasheet

    Abstract: bc337 bc337 transistor datasheet BC337 NPN transistor Equivalent for BC337 transistor bc337 npn BC337 equivalent Transistor BC337 QW-R201-039 OF TRANSISTOR BC337
    Contextual Info: UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC327/328 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    BC337/338 BC327/328 BC337 BC338 100mA 300mA 500mA, QW-R201-039 BC337 NPN transistor datasheet bc337 bc337 transistor datasheet BC337 NPN transistor Equivalent for BC337 transistor bc337 npn BC337 equivalent Transistor BC337 OF TRANSISTOR BC337 PDF