TRANSISTOR BB3 Search Results

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

3SK238

Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

HITACHI SMD TRANSISTORS

Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

B35AP

Contextual Info: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

MSB003

Abstract: sot23 marking V2p BFQ67
Contextual Info: Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION • High power gain Silicon NPN wideband transistor in a plastic SOT23 package. • Low noise figure 3 • High transition frequency • Gold metallization ensures

transistor with marking 4266

Abstract: BF547W equivalent transistor D 2497
Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION • Stable oscillator operation Silicon NPN transistor in a plastic SOT323 S-mini package. The BF547W uses the same crystal as the SO T23 version, BF547.

Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547W FEATURES DESCRIPTION • Stable oscillator operation • Good thermal stability. Silicon NPN transistor in a plastic SOT323 S-mini package. The BF547W uses the same crystal as the

YL2 sot23

Abstract: bb407 Y1 TRANSISTOR MARKING SOT23 5 8B397 PHILIPS bf547 BF547 MBB412
Contextual Info: Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ, 1 pF Low cost NPN transistor in a plastic SOT23 package. • Stable oscillator operation • High current gain • Good thermal stability.

transistor D 5032

Abstract: 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246
Contextual Info: bbS 3 q 31 Philips Semiconductors ODEMflga 335 W A P X Product specification NPN 4 GHz wideband transistor M ANER DESCRIPTION ^ PHILIPS/DISCRETE L7E BFG35 D _ PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. Intended for wideband

DTB113Z

Abstract: DTB113ZL transistor bb3
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD DTB113Z PNP SILICON TRANSISTOR DIGITAL TRANSISTOR BUILT-IN RESISTORS „ 3 FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input.

Contextual Info: Philips Sem iconductors bb53*131 □03212*1 STD • APX Product specification NPN 1 GHz wideband transistor BFW16A N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

Transistor 2SA 2SB 2SC 2SD

Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Contextual Info: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81

GSO 69

Contextual Info: bbSB^ai 0023^74 6RD * A P X N AMER PHILIPS/ DISCRE TE b?E ]> BST110 yv P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.

727 Transistor power values

Abstract: BST110 transistor wz
Contextual Info: • bbSB^ai OGSa'iTM fi'îO « A P X N AMER PHILIPS/DISCRETE BST110 b?E T> P-CHANNEL ENCHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in TO-92 variant envelope and intended fo r use in relay, high-speed and line-transformer drivers.

Philips FA 145

Abstract: BFQ17 lem HA dK SOT89
Contextual Info: DK. ^ . • P hilips Sem iconductors N A U ER LbSBTai 002505S SflS H I A P X PHILIPS/DISCRETE b 7E NPN 1 GHz wideband transistor DESCRIPTION Product specification D £ BFQ17 PINNING NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The

transistor smd zG

Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
Contextual Info: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

Contextual Info: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance