TRANSISTOR BA RW Search Results

2SC2945

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2 S C 2 9 5 4 is an NPN ep ita xia l silicon tra n sisto r d isign ed for low noise w ide ba nd a m p lifie r and bu ffe r a m p lifie r of O SC , for VH F

bc337

Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
Contextual Info: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C

transistor ba 752

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­

Transistor 9012 ax

Abstract: transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012
Contextual Info: S9013 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion Colle ctor Curre nt Ic=500mA TO- 92 Colle ctor P owe r Dissipa tion P c=625mW Compleme ntary to S 9012 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T ra n s is to rs ^ ^ 2SA966 TRANSISTOR PNP FEATURES !Is»lpat(on TO -92M O D P cm; 0.9W (Tamb=25°C) 1. EMITTER Icm: 2 .COLLECTOR -1.5 A k il^ iftCftf»-ba«e voltage V (BR)CBO: -30 V 3 .BASE temperature range 1 23 Tj,Tsig: -55 (C to + 1501c

transistor DK qj

Abstract: JKS-45 SE-49
Contextual Info: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @

CW 7805 H

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3031 The RF Line UHF P o w er Transistor T h e TP3031 is d e s ig n e d fo r 960 M H z ba se s ta tio n s in b o th a n a lo g a n d d ig ita l a p p lic a ­ tio n s . It in c o rp o ra te s h ig h v a lu e e m itte r b a lla s t re s is to rs , g o ld m e ta lliz a tio n s a n d o ffe r s a

BA12003

Abstract: transistor BA RW BA12004 transistor ba EL20M
Contextual Info: BA12001 BA12004 BA12002 BA12003 Driver, 7-channel, high current, high voltage The BA12001, BA12002, BA12003, and BA12004 are high-voltage, high-current transistor arrays consisting of 7 Darlington-connected transistors. Dimensions Units : mm (DIP16) Built-in surge absorbing diodes required

IC 555 timer monostable

Abstract: timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable
Contextual Info: MIL-N-39510/109A NT ÎÔPlRSEDÎlQ MIL-K-3#510/109 BSAP 27 Juno 1977 MILITART SPRCIFICATIOR MICROCIRCUITS, LIREAR, PRECISXOR TIMERS, MOROLITHIC SILICOR Thia apeoifioation la approved for usa by all Depart* aenta and Ageaolea of ttaa Departaent of Defeass.

transistor BA RW

Contextual Info: Product specification Philips S em iconductors BC817W; BC818W NPN general purpose transistor PIN CONFIGURATION FEATURES • H igh c u rre n t • S - m in i p a c k a g e . R> R 1 DESCRIPTION °“C N P N tra n s is to r in a p la s tic S O T 3 2 3 package.

cbic-v

Abstract: NV231A01 pv-231 AO1011 ALA110 pnp 8 transistor array ax pm hf ne TRANSISTOR ba 751 BL8024
Contextual Info: Preliminary Data Sheet May 1996 m ic ro e le c tro n ic s group Lucent Technologies Bell Labs Innovations ALA110 VHF Semicustom Linear Array Features Description • High-speed CBIC process 10.2 GHz NPN, 4.3 GHz PNP The ALA110 Semicustom Linear Array is an Integrated

2N174A

Abstract: 2n174
Contextual Info: .,” un.s.195cu/113 26 JmurY 1565 !a-iwlg Smxncmm Kn.rrA.w SEXIWHLUCIOR DEVICE, ‘lllAK5151WR, Pm, Cmu.mw, mm- TYFE 2i17bA 1. 5c@PE 1.1 k. Thin w.eclric.tl.n tmr,iatnr and in in aocordanco cover. tbs detail rewiwta for a kigh+rxer, FIP germrdum with IUL-.5-195O3 except ● n oWAE*

qm15td-9b

Abstract: QM15TD-9 transistor BA RW
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM 15TD-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QMÎ5TD-9B 15A 500V 250 I i APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders

TRANSISTOR D400

Abstract: D400 transistor transistor C200 d400 d400 e nt transistor d400 f S9015 s9014 equivalent s9015 equivalent
Contextual Info: S9015 P NP EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion S witching Applica tion TO- 92 Collector Curre nt Ic=-100mA Collector P owe r Dissipa tion P c=450mW Comple me ntary to S9014 ABS OLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol

PNP marking NY sot-223

Abstract: 13004-v LDO marking code AL transistor 9005
Contextual Info: $ TAIW AN TS9005 S E M IC O N D U C T O R 600mA Low Noise CMOS LDO b RoHS C O M P L IA N C E SO T-89 SO T-223 2 Pin D s fin itio n : Pin D efinition: 1. Input 1. G round 2. Input 3. Output 2. G round 3. O utpu t 1 2 3 1 2 3 General Description The T S 9005 series is a positive voltage regulator developed utilizing C M O S technology featured low quiescent

MG1200FXF1US53

Abstract: 4500a Toshiba IGBT 1200A 3300V YG6260 transistor BA RW diode ba 124 ba ph 20v diode ba qu IGBT GTR IPM sage power switching 15v 1.2a
Contextual Info: MG1200FXF1US53 TOSHIBA Target Spec. TOSHIBA GTR MODULE MG1200FXF1US53 S ILICON N-CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Features ●High Input Impedance ●Enhancement Mode ●Electrodes are Isolated from Case EQUIVALENT CIRCUIT

2n2907 pnp

Abstract: 2n2222 transistor pin b c e 2n2907 TRANSISTOR PNP MPQ6502 2n2222 npn 2N2906 NPN Transistor 2N2907 2N2221 2N2222 2N2906
Contextual Info: Central Sem iconductor Corp. Central Sem iconductor Corp. central sem iconductor Corp. 1 I 1 1 M P Q 6501 M P Q 6502 C OM PLEMENTARY QUAD T R A N SISTOR ♦I JEDEC T O - 116 CASE 145 Adam s Avenue Hauppauge, New York 11 788 D ESCRIPTION The CENTRAL S EM ICONDUCTOR M P Q 6 5 0 1 , MPQ6502, types are comprised of four independent

Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -20 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors

Contextual Info: WWEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KS624530 Single Darlington Transistor Module 300 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol KS624530 Units Ti

Contextual Info: Philips Semiconductors Product specification PNP power transistor BDP32 FEATURES • S O T223 package. DESCRIPTION P N P p o w e r tra n s is to r in a plastic S O T 2 2 3 p a c k a g e fo r ge n e ra l p u rp o s e , m e d iu m p o w e r a p p lic a tio n s .

Contextual Info: T O SH IB A MP4005 T O S H IB A P O W E R T R A N SIST O R M O D U L E SILIC O N NPN & P N P E P IT A X IA L T Y P E D A R LIN G T O N P O W E R TR A N SIST O R 4 IN 1 MP4005 HIGH PO W ER SWITCHING APPLICATIONS. IN D U STRIA L APPLICATION S U n it in mm

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ] QM400HA-2HB • Ic f • • • • Collector current.400A V C EX Coliector-ernitter voltage 1000V hFE DC current gain. 750

2SC5446

Contextual Info: T O SH IB A TENTATIVE 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2 SC 5 4 4 6 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION Unit in mm DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • High Voltage