TRANSISTOR BA RW Search Results

2SC2945

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2 S C 2 9 5 4 is an NPN ep ita xia l silicon tra n sisto r d isign ed for low noise w ide ba nd a m p lifie r and bu ffe r a m p lifie r of O SC , for VH F

bc337

Abstract: bc338 TRANSISTOR bc337 40 TRANSISTOR BC338 BC338 TRANSISTOR TRANSISTOR BC337-40 BC33840
Contextual Info: MCC TO-92 Plastic-Encapsulate Transistors ^ BC337 BC338 ,-16,-25,-40 TRANSISTOR(NPN) FEATURES Pcm: 0.625W (Tamb=25°C) Icm: 0 .8 A ÍIIÍÍÉ>ji^fe>ba»a voltage Vcbo: BC 337 : 50V B C 338 : 30V storage junction temperature range Tj,Tstg: -55'C to + 150°C

transistor ba 752

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T ra n s is to rs ^ ^ 2SA966 TRANSISTOR PNP FEATURES !Is»lpat(on TO -92M O D P cm; 0.9W (Tamb=25°C) 1. EMITTER Icm: 2 .COLLECTOR -1.5 A k il^ iftCftf»-ba«e voltage V (BR)CBO: -30 V 3 .BASE temperature range 1 23 Tj,Tsig: -55 (C to + 1501c

transistor DK qj

Abstract: JKS-45 SE-49
Contextual Info: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @

IC 555 timer monostable

Abstract: timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable
Contextual Info: MIL-N-39510/109A NT ÎÔPlRSEDÎlQ MIL-K-3#510/109 BSAP 27 Juno 1977 MILITART SPRCIFICATIOR MICROCIRCUITS, LIREAR, PRECISXOR TIMERS, MOROLITHIC SILICOR Thia apeoifioation la approved for usa by all Depart* aenta and Ageaolea of ttaa Departaent of Defeass.

qm15td-9b

Abstract: QM15TD-9 transistor BA RW
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM 15TD-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QMÎ5TD-9B 15A 500V 250 I i APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HY-2H APPLICATION Inverters, Servo drives, UPS, DC m otor controllers, NC equipm ent OUTLINE DRAWING & CIRCUIT DIAGRAM D im e n s io n s in m m C E Tab# 110, t= 0 .5 M 5,

PNP marking NY sot-223

Abstract: 13004-v LDO marking code AL transistor 9005
Contextual Info: $ TAIW AN TS9005 S E M IC O N D U C T O R 600mA Low Noise CMOS LDO b RoHS C O M P L IA N C E SO T-89 SO T-223 2 Pin D s fin itio n : Pin D efinition: 1. Input 1. G round 2. Input 3. Output 2. G round 3. O utpu t 1 2 3 1 2 3 General Description The T S 9005 series is a positive voltage regulator developed utilizing C M O S technology featured low quiescent

Contextual Info: T O SH IB A MP4005 T O S H IB A P O W E R T R A N SIST O R M O D U L E SILIC O N NPN & P N P E P IT A X IA L T Y P E D A R LIN G T O N P O W E R TR A N SIST O R 4 IN 1 MP4005 HIGH PO W ER SWITCHING APPLICATIONS. IN D U STRIA L APPLICATION S U n it in mm

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ] QM400HA-2HB • Ic f • • • • Collector current.400A V C EX Coliector-ernitter voltage 1000V hFE DC current gain. 750

2SC5446

Contextual Info: T O SH IB A TENTATIVE 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2 SC 5 4 4 6 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION Unit in mm DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • High Voltage

NPN C1685

Abstract: C1685 transistor
Contextual Info: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.

QM30DY-2H

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE i QM30DY-2H * Ic * V cex * hFE Collector current. 30A Collector-emltter voltage. 1000V DC current gain.75 * Insulated Type

TRANSISTOR SE 135

Abstract: 2SC2055 transistor BA RW
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC 2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on V H F band portable or hand-held radio applications. Dimensions in mm 0 5 .1 M A X

KE72

Contextual Info: POU E RE X INC D 0004414 B D /iÆ ÂkL33^. PRX KE723503 Powerex, Inc.-, Hillis Street, Youngwood, Pennsylvania 15697 412; 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43 41.14.14 T-^ 3 3 -3 5 " S iX -D d flin C jtO tl

MPS-A65

Abstract: mpsa65 MPS-A66
Contextual Info: Silicon S is iS Darlington Transistor M P S -A 6 5 M PS-A 66 The General Electric MPS-A65, A66 are Silicon Planar Epi­ taxial Passivated PNP Darlington Transistors designed for pre­ amplifier input applications where high impedance is a requirement. a b s o lu te m a x im u m ra tin g s : TA = 2 5 °c unless otherwise specified

2sc1972

Abstract: transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ Dimensions signed for RF power amplifiers on V H F band mobile radio applications. 9.1 ± 0 .7 03.6 ± 0 .2

CA3080T

Abstract: ed 3b diod a 3140 12 diod full wave bridge rectifier ic BA 10B FULL WAVE RECTIFIER a3140 CA3130 ica ca3130 ca 3140a a3140 equivalent
Contextual Info: CA3140, CA3140A Semiconductor September 1998 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational am plifiers that com bine the advantages of high voltage PM O S transistors with high voltage bipolar transistors on a single

transistor BA RW

Abstract: QM15DX-H
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15DX-H MEDIUM POWER SWITCHING USE INSULATED TYPE QMT5DX-H • lc • V cex • hFE Collector current.15A Collector-emitter voltage.600V DC current gain. 50

2SC2347

Contextual Info: TOSHIBA 2SC2347 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2347 TV UHF OSCILLATOR APPLICATIONS. U n it in mm TV VHF MIXER APPLICATIONS. 5.1MAX. MAXIMUM RATINGS Ta = 25°C RATING UNIT 0.45 VCBO 30 V Colleetor-Emitter Voltage VCEO 15 V Emitter-Base Voltage

SL440

Abstract: fatar basic circuit diagram of AC servo motor SL440 power control Servo or Proportional Amplifier 8L440 Plessey SL440 basic diagram of AC servo motor faders ac motor servo control circuit diagram
Contextual Info: T "6 5 -0 Y rWn Semiconductors PLESSEY SL440 POWER CONTROL CIRCUIT The 8L440 fc a versatile integrated c irc u it cteigry?d to pfO'^cte verioble-phasc control o f triacs and other power sw itch in g donees In a variety of dom estic and Industrial ap plications. The basic elem ents o f the SL440 arc shown In

tsl 7805

Abstract: 690AN ADM8691A M869 transistor Ba 850c
Contextual Info: ANALOG DEVICES Microprocessor Supervisory Circuits ADM8690-ADM8695 FEATURES F U N C T IO N A L B L O C K D IA G R A M S U p g r a d e for A D M 690/A D M 695, M A X 6 9 0 - M A X6 95 Specified O ve r T em p e ratu re L o w P o w e r C o n s u m p t i o n 0.7 m W