TRANSISTOR BA RW Search Results

2SC2945

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T h e 2 S C 2 9 5 4 is an NPN ep ita xia l silicon tra n sisto r d isign ed for low noise w ide ba nd a m p lifie r and bu ffe r a m p lifie r of O SC , for VH F

PNP marking NY sot-223

Abstract: 13004-v LDO marking code AL transistor 9005
Contextual Info: $ TAIW AN TS9005 S E M IC O N D U C T O R 600mA Low Noise CMOS LDO b RoHS C O M P L IA N C E SO T-89 SO T-223 2 Pin D s fin itio n : Pin D efinition: 1. Input 1. G round 2. Input 3. Output 2. G round 3. O utpu t 1 2 3 1 2 3 General Description The T S 9005 series is a positive voltage regulator developed utilizing C M O S technology featured low quiescent

Contextual Info: T O SH IB A MP4005 T O S H IB A P O W E R T R A N SIST O R M O D U L E SILIC O N NPN & P N P E P IT A X IA L T Y P E D A R LIN G T O N P O W E R TR A N SIST O R 4 IN 1 MP4005 HIGH PO W ER SWITCHING APPLICATIONS. IN D U STRIA L APPLICATION S U n it in mm

NPN C1685

Abstract: C1685 transistor
Contextual Info: EO PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 PACKAGE DIMENSIONS DESCRIPTION Æ db tft The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.

em 518 diode

Contextual Info: MITSUBISHI TRANSISTOR MODULES | QM50CY-H | MEDIUM POWER SWITCHING USE \ INSULATED TYPE ? QM50CY-H • lc Collector c u rre n t. • Vcex C ollector-em itter v o lta g e . DC current g a in . • hFE 50A ! 600V I 75 I

MPS-A65

Abstract: mpsa65 MPS-A66
Contextual Info: Silicon S is iS Darlington Transistor M P S -A 6 5 M PS-A 66 The General Electric MPS-A65, A66 are Silicon Planar Epi­ taxial Passivated PNP Darlington Transistors designed for pre­ amplifier input applications where high impedance is a requirement. a b s o lu te m a x im u m ra tin g s : TA = 2 5 °c unless otherwise specified

2sc1972

Abstract: transistor 2sc1972 TO220 RF POWER TRANSISTOR NPN 18W 12 transistor RF POWER TRANSISTOR
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1972 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1972 is a silicon NPN epitaxial planar type transistor de­ Dimensions signed for RF power amplifiers on V H F band mobile radio applications. 9.1 ± 0 .7 03.6 ± 0 .2

SL440

Abstract: fatar basic circuit diagram of AC servo motor SL440 power control Servo or Proportional Amplifier 8L440 Plessey SL440 basic diagram of AC servo motor faders ac motor servo control circuit diagram
Contextual Info: T "6 5 -0 Y rWn Semiconductors PLESSEY SL440 POWER CONTROL CIRCUIT The 8L440 fc a versatile integrated c irc u it cteigry?d to pfO'^cte verioble-phasc control o f triacs and other power sw itch in g donees In a variety of dom estic and Industrial ap plications. The basic elem ents o f the SL440 arc shown In

JI32

Abstract: AP163703 RSTCON C161CI C161CS C161PI C161RI C164CI-8EM C167CR-16RM C167CR-4RM
Contextual Info: Microcontrollers ApNote AP163703 Reset and System Startup Configuration via PORT0 or Register RSTCON Presents an overview about the different reset types power-on reset, long/short hardware reset, software reset, WDT reset and the system startup configuration via PORT0 or

1200 va ups circuit diagram

Abstract: transistor BA RW QM15
Contextual Info: i j I MITSUBISHI TRANSISTOR MODULES I j QM150DY-24K I % j HIGH POWER SWITCHING USE j S INSULATED TYPE j j j QM150DY-24K • • • • • lc Collector current. 150A Vcex Collector-emitter voltage. 1200V hFE DC current gain.75

S100 NPN Transistor

Abstract: S100 transistor MPS6546 S100 TO-92
Contextual Info: MPS6546 silicon NPN SILICON V H F M IXER TRANSISTOR NPN SILICON A N N U LA R V H F M IXER TRANSISTOR . . designed for use in V H F mixer applications. Collector Emitter Breakdown Voltage B V c e O = 25 V dc (Min) @ lc = 1.0 m Adc High Current Gain—Bandwidth Product

UJT 2N2646

Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891
Contextual Info: UNIJUNCTIONS, TRIG G ERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can

691AA

Abstract: ADM691AA 693AARW
Contextual Info: ANALOG DEVICES Microprocessor Supervisory Circuits ADM691A/ADM693A/ADM800L/M FEATURES Low Pow er Consumption: Precision Voltage M onitor ± 2 % Tolerance on A D M 800L /M Reset Tim e Delay—200 ms, or Adjustable 1 |jlA Standby Current A utom atic Battery Backup Pow er Switching

2SC1324

Abstract: 470M
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1324 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC 1324 is a silicon NPN epitaxial planar type transistor designed D im e n s io n s in m m fo r industrial use RF broadband amplifiers from V H F to UHF band.

QM150DY-H

Abstract: QM15
Contextual Info: I MITSUBISHI TRANSISTOR MODULES QM150DY-HK ¡ HIGH POWER SWITCHING USE _ INSULATED TYPE j f QM150DY-HK • Ic • Vc e x • hFE Collector current.150A Collector-emitter voltage.600V DC current gain.75

Contextual Info: MOTOROLA Order this document by BUS98/D SEMICONDUCTOR TECHNICAL DATA BUS98 BUS98A D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS BVCEO 250 WATTS 8 5 0 -1 0 0 0 V (B V C E S )

MU4893

Abstract: MU4894 MU4891 MU4892 EB20 unijunction application note 100-C
Contextual Info: MU4891 silicon thru MU4894 SILICON A N N U LA R PLASTIC U N IJU N C TIO N TRANSISTORS PN UNIJUNCTION TRANSISTORS . . . designed for military and industrial use in pulse, timing, triggering, sensing, and oscillator circuits. The annular process provides low leakage current, fast switching and low peak-point

691AR

Abstract: E 7805 8pin ic dm690
Contextual Info: ANALOG DEVICES FEATURES Superior Upgrade for M A X 690-M A X 695 Specified Over Tem perature Low Power Consumption 5 mW Precision Voltage M onitor Reset Assertion Down to 1 V V Cc Low Switch On-Resistance 1.5 i l Normal, 20 i l in Backup High Current Drive (100 mA)

2SC3105

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3105 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC 3105 OUTLINE DRAWING is a silico n N P N e p ita x ia l p la n a r ty p e tra n s is to r s p e c ific a lly designed fo r p o w e r a m p lifie rs in th e 8 0 0 — D im e n sio n s in m m

2SK1529

Contextual Info: TO SHIBA 2SK1529 Field Effect Transistor Unit in m m 15.9 MAX Silicon N Channel MOS Type rc-MOS II # 3 .2 ±0.2 High Power Amplifier Application Features • High Breakdown Voltage - VDSS = 180V (Min.) • High Forward Transfer Adm ittance - "Yfs = 4.OS (Typ.)

lrr3

Contextual Info: P D -2 .3 4 1 International US Rectifier HEXFRED Provisional Data Sheet HFA08TB60 600V, 8A ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Units Characteristics Vr VRRM 600 V IF AV 8 A trr (typ) 18 ns Qrr (typ) 65 nC IRRM 5 A di(rec)M/dt (typ)

Contextual Info: 2SC3112 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C3 1 1 2 Unit in mm FOR AUDIO AM PLIFIER AND SWITCHING APPLICATIONS • • • High DC Current Gain High Breakdown Voltage High Collector Current 5.1 M AX. hpE = 600~3600 VCEO = 50V

GE 4N35

Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •

transistor ba 752

Contextual Info: TOSHIBA MP6754 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M P 6 7 54 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage