BLS2731 Search Results
BLS2731 Datasheets (16)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BLS2731 | Philips Semiconductors | Microwave power transistor | Original | 88.29KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-10 | Philips Semiconductors | Microwave Power Transistor | Original | 88.29KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-10,114 | Philips Semiconductors | RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF POWER SOT445C | Original | 12 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-10 TRAY | NXP Semiconductors | Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 2700 - 3100 MHz; Load power: 12.5 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 100 us | Original | 88.28KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-110 | Philips Semiconductors | Microwave Power Transistor | Original | 72.01KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-110 | Philips Semiconductors | Microwave power transistor | Original | 70.22KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-110,114 | NXP Semiconductors | Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 110 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us; Package: SOT423A (CDFM2); Container: Blister pack | Original | 72KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731110T | Philips Semiconductors | TRANS GP BJT NPN 75V 3SOT-423A | Original | 72.02KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-110TRAY | Philips Semiconductors | TRANS GP BJT NPN 75V 3SOT-423A TRAY | Original | 72.02KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-150 | Philips Semiconductors | Microwave Power Transistor | Original | 57.58KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-20 | Philips Semiconductors | Microwave Power Transistor | Original | 61.25KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-20,114 | NXP Semiconductors | Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 25 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 100 us; Package: SOT445C (CDFM2); Container: Blister pack | Original | 61.23KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-20 TRAY | NXP Semiconductors | Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 25 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 100 us | Original | 61.23KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-50 | Philips Semiconductors | Microwave Power Transistor | Original | 57.59KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-50,114 | NXP Semiconductors | Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 60 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 100 us; Package: SOT422A (CDFM2); Container: Blister pack | Original | 57.56KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLS2731-50 TRAY | NXP Semiconductors | Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 60 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 100 us | Original | 57.56KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLS2731 Price and Stock
NXP Semiconductors BLS2731-10,114RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLS2731-10,114 | 11,840 |
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Get Quote | |||||||
NXP Semiconductors BLS2731-110,114RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLS2731-110,114 | 9,622 |
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Get Quote | |||||||
NXP Semiconductors BLS2731-50,114RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLS2731-50,114 | 9,204 |
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Get Quote | |||||||
NXP Semiconductors BLS2731-20,114RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLS2731-20,114 | 4,764 |
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BLS2731 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TSTDContextual Info: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731-20 FEATURES PINNING • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design DESCRIPTION 1 • Emitter ballasting resistors improve ruggedness |
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ot445atstd | |
BH Rf transistor
Abstract: BLS2731-50
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ot422abh rf transistorbls2731-50 | |
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Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -150 FEATURES PINNING - SOT469A • Matched internally to 50 Q PIN • Suitable for short and medium and long pulse applications DESCRIPTION 1 collector emitter .« A # • Internal input and output matching networks for an easy |
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bls2731ot469a | |
s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
Abstract: BLS2731-110 CERAMIC CAPACITOR SMD PHILIPS TRANSISTOR SMD w2
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m3d260bls2731-110ot423asca73+4 | |
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Contextual Info: Philips Sem iconductors Preliminary specification Microwave power transistor BLS2731-150 PINNING - SOT469A FE A T U R E S • M atched internally to 50 £2 PIN DESCRIPTION • Su itab le for short, m edium and long pu lse app licatio ns 1 co llecto r • Internal input and output m atching netw orks for an e a s y |
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bls2731-150ot469at469a | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-20 Microwave power transistor Preliminary specification Supersedes data of 1997 Jan 22 File under Discrete Semiconductors, SC15 1997 Nov 05 Philips Semiconductors Preliminary specification Microwave power transistor |
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bls2731-20sca55127147/00/02/pp8 | |
philips catalog resistors
Abstract: resistors philips catalog catalog transistor Silicon Epitaxial Planar Transistor philips "Philips Semiconductors" Catalog
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bls2731-110ot423aimages/bls2731-110philips catalog resistors+4 | |
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Contextual Info: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -20 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors |
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bls2731sc19abls2731-20ot445c+1 | |
LFE15
Abstract: LAE4001R BLS2731-50 BLS2731-10
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bls2731-10bls2731-20bls2731-50bls2731-110+8 | |
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Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 >10 FEATURES PINNING • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness |
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bls2731 | |
BLS2731-10
Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
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m3d324bls2731-10ot445csca60+2 | |
transistor SMD DK rc
Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342
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bls2731-110ot423asca57125108/00/04/pp12+6 | |
SOT423
Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ
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bls2731ot423asot423s band power transistor 2.7 3.1 3.5 ghz | |
BLS2731-50
Abstract: atc 700a
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bls2731-50ot422asca57125108/00/03/pp8+1 | |
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BLS2731-20
Abstract: RF POWER TRANSISTOR 2.7 ghz 3.1 ghz list part number
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m3d324bls2731-20ot445csca60+2 | |
LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
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ot363sc-88lpc2148 i2cbgb210s+8 | |
BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
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bap1321-02bap65-05bap65-03bap65-05w+16 | |
BLF4G08LS-160A
Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A
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31-dec-1030-jun-11uba2074at/n1uba2074t/n1+12 | |
Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
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rx1214b80wrx1214b130yrx1214b170wrx1214b300y+8 | |
UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
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upc8236mrfe6vpm74 7 segment displaymounting and soldering of rf transistors+6 | |
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Contextual Info: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS |
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
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te121mpf102 spice modelblf278 mosfet hf amplifierblf4g08ls-160a+7 | |
BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
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prf957tff1003hntff1007hntff1014hn+16 | |
tda8510j 2.1 creative amplifiers
Abstract: transistor SMD wm9 SAA7119 IC TDA8510J EQUIVALENT IC NO. LIST Rf based remote control robot using 8051 SAA7119 philips TDA8947J equivalent BLF268 HEF4000B Family specifications TDA8947J
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pnx1300pnx1500saa6752tda8510j 2.1 creative amplifiers+9 | |