TRANSISTOR B754 Search Results

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

MSM511665-10

Abstract: MSM511665-80
Contextual Info: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.

MSM411001-10RS

Abstract: MSM411001-12RS
Contextual Info: O K I S EM I CO ND U CT OR GROUP ûi 6724240 0 K I SEM IC O N D U C TO R GROUP _ O K I D É b754S4D □OOSSTS 3 89D 0 2 5 9 2 D 7 - V i -¿ > 3 - / s ' _ semiconductor MSM4 1 1 0 0 1 RS_ 1,048,576-BIT DYNAMIC RANDOM ACCESS MEMORY < Nibble Mode Type >

Contextual Info: O K I electronic components OCS37 Optical PNPN Switches GENERAL DESCRIPTION The OCS37 is an opto coupler, combining a GaAs infrared light emitting diode and a silicon PN PN photo sensor in a two-channel configuration. Encased in a 6-pin plastic package, the device is capable

e33a

Contextual Info: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
Contextual Info: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.

A5 GNC

Abstract: TSOP32-P-4QO-K 51V17400 5116100
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
Contextual Info: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Contextual Info: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.

uras 4

Abstract: uras 2 5116100
Contextual Info: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.

Bv 42 transistor

Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
Contextual Info: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.

Contextual Info: OKI Semiconductor MSM6234 DTMF Tone Dialer LSI G EN ER A L D ESCRIPTIO N The MSM6234 is a tone dialer LSI which is fabricated by Oki's low power consumption CMOS silicon gate technology. The MSM6234can generate 16 DTMF Dual Tone Multi Frequency signals which consists of 4 higher

Contextual Info: O K I Semiconductor MSM5 14800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D E S C R IP T IO N The M SM514800A/ ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the M SM514800A/ASL is OKI's CMOS silicon gate process

Contextual Info: O K I Semiconductor M SM 514800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D ESCR IPTIO N The M SM514800A/ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM514800A/ASL is OKI's CMOS silicon gate process

Contextual Info: O K I Semiconductor MSM51V16800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.

A11E

Abstract: A1E transistor
Contextual Info: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100 is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.

MSM51V17800

Abstract: J00j
Contextual Info: O K I Semiconductor MSM5 1 V17800_ 2,097,152-Word x 8-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V17800 is OKI's CMOS silicon gate process technology.

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.

T02I

Abstract: 26-PIN ZIP20-P-400 514100B
Contextual Info: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.

transistor a7g

Abstract: a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80
Contextual Info: SÔE T> • h?2424D DDIHT?! Tb3 « O K I J 0 « I SEMICONDUCTOR GROUP O K I s e m ic o n d u c to r - r - H t - z s - i s M S M 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit.

MSM51V16100

Abstract: 2M2H
Contextual Info: O K I Semiconductor MSM5 1 V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51VI6100 is OKI's CMOS silicon gate process technology.

514402A

Abstract: 26-PIN ZIP20-P-400-W1 5V110 5424G
Contextual Info: O K I S em iconductor M SM 514402A /A L_ 1,048,576-Word x 4-B it DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.