TRANSISTOR B72 Search Results

b72L

Abstract: IC regulator B72 sot-23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD B772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. „ FEATURES

2SB772SS

Abstract: B72 sot-23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC 2SB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES

B72 sot-23

Abstract: 2SB772SS QW-R206-089
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB772SS PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC 2SB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 2 FEATURES

TRANSISTOR b72

Abstract: B721
Contextual Info: UTC B772SS PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC B772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 2 1 FEATURES *High current output up to 3A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device

BUK457-600B

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL L.5E D fll 7110fl2b CJObmMb ^ 3 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BU1708AX

Abstract: 7DFL
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.

lem HA

Abstract: BU1708AX
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.

BUK457-600B

Contextual Info: PHILIPS INTERNATIONAL fc,5E D m 7110fl2fe. O O b m M b IbB • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BT816

Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Contextual Info: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

equivalent transistor TT 3034

Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages

transistor b722

Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

Contextual Info: N AMER PHILIPS/DISCRETE b^E T> b b S a ' m 0027752 T27 APX BFX34 J V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as high-current switching device, e.g. inverters and switching regulators. QUICK REFERENCE DATA

T2D 24 DIODE

Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

NDT453N

Contextual Info: September 1996 National Semiconductor" N D T453N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF150 P ow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Contextual Info: AWB7223 1.930 -1.995 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

Contextual Info: Y TED Hygienischer Druckschalter Eigenschaften „„ -1 … 0 bar bis 0 … 25 bar „„ Robustes Edelstahlgehäuse für raue Umgebungsbedingungen „„ Eigensichere Ausführung (LCIE 03 ATEX 6300 X) „„Zwei Ausgänge mit Schaltfunktion (PNP-Transistor oder galvanisch

FSW-112R-A

Contextual Info: INDUSTRIAL FLOW SWITCHES With No Moving Parts B FSW-118 1⁄2" NPT ߜ High/Low Alarm Indication for Air or Liquids ߜ Wide Range of Field Adjustable Settings ߜ High Reliability–No Moving Parts ߜ Compact, Integral Design ߜ Transistor or Relay Output

LED photo darlington transistor IC PACKAGE

Abstract: PHOTO TRANSISTOR Rise time of photo transistor "photo transistor" transistor AS 337 OC701
Contextual Info: O K I electronic components OC701 PHOTO COUPLER GENERAL DESCRIPTION The OC701 is a photocoupler formed by combining a GaAs infrared light emitting diode as the input element, and a silicon photo Darlington transistor as an output element. Eencased in a 6-pin plastic

LED photo darlington transistor IC PACKAGE

Abstract: OC70 PHOTO TRANSISTOR QC701 OC701 QC701-1 led 6pin LED PHOTO TRANSISTOR
Contextual Info: O K I electronic components OC701 PHOTO COUPLER GENERAL DESCRIPTION The OC701 is a photocoupler formed by combining a GaAs infrared light emitting diode as the input element, and a silicon photo Darlington transistor as an output element. Eencased in a 6-pin plastic

LDJ2H825M03FA062

Abstract: AWB7225 DATE CODE MURATA Hybrid Couplers
Contextual Info: AWB7225 860 - 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ 610 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System

AWB7227

Contextual Info: AWB7227 2.11-2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET- Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ 65 MHz, +27 dBm • 29 dB Gain • High Efficiency • Low Transistor Junction Temperature • Matched for a 50 Ω System