TRANSISTOR B 540 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

mitsubishi top marking

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power

RD09MUP2

Abstract: TRANSISTOR D 1765 720 L 0619 1788
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power

TRANSISTOR D 1765 320

Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power

BLW50F

Abstract: MFC SERIES CAPACITOR ferroxcube tx vhf linear pulse power amplifier
Contextual Info: N AMER PHILIPS/DISCRETE b^E b b S B ^ l D Q H ci 3 4 3 1 7 5 * A P X BLW50F D A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in class-A, A B and B operated, industrial and m ilitary transmitters in the h .f. and v .h .f. band. Resistance stabilization provides

Contextual Info: < Silicon RF Power MOS FET Discrete > RD09MUP2 RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W DESCRIPTION (a) (b) 7.0+/-0.2 0.2+/-0.05 FEATURES (4.5) 4.2+/-0.2 (d) 5.6+/-0.2 6.2+/-0.2 (3.6) 8.0+/-0.2 0.65+/-0.2 (b) RD09MUP2 is a MOS FET type transistor

BLW50F

Abstract: PHILIPS 4312 amplifier power amplifier handbook ceramic capacitor philips 561 ferroxcube wideband hf choke
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial

BSX51

Abstract: Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682
Contextual Info: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR BSX 52; a ; B TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BSW 21, A and BSW 22, A • LF amplification A m plification BF BSX 51, 52 BSX 51 A, 52 A BSX 51 B, 52 B 25 V - Low current switching Commutation faible courant

BLW50F

Abstract: PHILIPS 4312 amplifier
Contextual Info: bSE I m 711Dfi5b 0Db35M0 43^ H P H I N BLW50F PHILIPS INTERNATIONAL H.F./V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, A B and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides

transistor B 540

Contextual Info: BCX70H NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25t; Sym b o l C h aracte ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

ferroxcube wideband hf choke

Abstract: transistor 4312 BLW50F PHILIPS 4312 amplifier 4312 020 36640 Philips SSB vhf linear pulse power amplifier
Contextual Info: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance

Contextual Info: N AUER PHILIPS/DISCRETE b^E D bbsa^ai DD3oa4a 52b Philips Sem iconductors Product Specification PowerM OS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

Contextual Info: MMBT2907A Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. C 3 2 1 1 Mechanical Data B Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options:

micro strip line

Abstract: RD09MUP2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a (b) 7.0+/-0.2 0.2+/-0.05 RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power

BA1F4M

Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR B A 1F 4M The BA1F4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4.2 MAX. (0.165 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit.

BUK457-500B

Abstract: smps 40.1 T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE b lE ]> • bbSBTBl 003Ü7ÜS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: MOTOROLA Order this document by MUN5111DW1T1/D SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual B ia s Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic

fr93

Abstract: Transistor BFR 96 BFR 36.2
Contextual Info: ViSHAY _ B FR93 A/B FR93 AR/B FR93 AW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications W ide band a m plifier up to GHz range. Features • High pow er gain

54128

Abstract: 54175 5413 motorola TTL 7400 motorola 7400 4-input nand gate LA 4301 F 54179
Contextual Info: LA NS D A L E S E M I C O N D U C T O R 3 2 E I> • 5 3 3=1003 00003(3 M (3 B I L T E MAXIMUM RATINGS Supply Voltage - V00 Supply Operating Voltage Range MOTOROLA INTEGRATED CIRCUITS 5400 Series 7400 Series The 5400/7400 series of transistor-transistor logic is a

TTL 7400 catalog

Abstract: 54194 54175 5413 motorola 54181 7400 family TTL E-16-LEAD 54174 motorola S3FC F 54179
Contextual Info: LA NS D A L E S E M I C O N D U C T O R 3 2 E I> • 5 3 3=1003 00003(3 M (3 B I L T E MAXIMUM RATINGS Supply Voltage - V00 Supply Operating Voltage Range MOTOROLA INTEGRATED CIRCUITS 5400 Series 7400 Series The 5400/7400 series of transistor-transistor logic is a

Contextual Info: ATTENTION O B SER V E PRECAUTIONS FO R HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25 /Nov.’02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl QQE'iBHB 17S • IAPX BLW50F b'JE D H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides

Contextual Info: FF 400 R 06 KL 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Thermal properties 0,0345°C/W 0,069 °C/W 0,02 °C/W 0,04 °C/W DC, pro B a u ste in /p e r module DC, pro Zweig /p e r Arm pro Baustein / per module Electrical properties

Contextual Info: FZ 600 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 600 A 1 ms 1200 A O Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,057 °C/W 2200 W V ge 20 V Inversdiode