TRANSISTOR B 536 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

BF550

Abstract: transistor marking code 325 0024-B
Contextual Info: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

BFQ 42 transistor

Contextual Info: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES

Contextual Info: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.

F941

Abstract: 2N6671 2N6673
Contextual Info: M I L —S —19500/536{USAF AMENDMENT 3 8 Sep tem b er 1987_ SUPERSËDING AMENDMENT 2 7 F e b r u a r y 1986 MILITARY SPECIFICATION SEMICONDUCTOR DEVI CE, TRANSISTOR, NPN, S I L I C O N , POWER TYPES 2N6671, AND 2N6673, JAN, JANTX, AND JANTXV This

Contextual Info: MITSUBISHI RF POWER TRANSISTOR DD l T b T ? 7bS 2SC3908 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC3908 is a silicon NPN epitaxial planar type transistor designed for HF power amplifiers applications. Dimensions in mm FEATURES • High power gain: Gpe ^ 11.5dB

TRANSISTOR CATALOGUE

Abstract: tag l9 225 400 BLF368 Philips 809 08003 2222 031 capacitor philips PINNING-SOT262 MCA-96 16kQ TRANSISTOR 536
Contextual Info: Philips Semiconductors • b b S B 'm ÜDBOOm T3T Product specification HAPXi VHF push-pull power MOS transistor BLF368 N AMER PHILIPS/D I S C R E T E bRE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

TRANSISTOR K 314

Abstract: telefunken ta 350 bf314
Contextual Info: < TELEFUNKEN ELECTRONIC Ô1C D • ñRSDDTb D Q D S n b 2 ■ ALÛÛ T ; - 3 1 - / 7 mitPdjJIMtiM electronic B F 314 ; Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Application« Video Input stages in common base configuration Features:

BUK581-100A

Abstract: DD3003
Contextual Info: tiTE D N AMER P H I L I P S / D I S C R E T E • b bS BT a i □03Dfl3tj 25 2 ■ APX Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

Contextual Info: SIEMENS BUZ 74 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 74 Vds 500 V b 2.4 A RoSlon 3 Cl Package Ordering Code TO-220 AB C67078-S1314-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

on 2518 transistor

Abstract: transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • Ô ^ Ü O T b 000e]Liö3 3 ■ ALG6 • BU 536 'ïTifLf FMKdM electronic CreativeTecbnotojpe* T-33-11 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique • Short switching time

Contextual Info: Ordering n u m b e r:E N 5363A 2SC5302 N0.5363A NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Defmition Color Display Horizontal Deflection Output Applications Features • High speed tf= 100ns typ . • High breakdown voltage (Vcbo = 1500V). • High reliability (Adoption of HVP process).

TRANSISTOR 536

Abstract: transistor b 536 BD 534 536 transistor BD 536 TRANSISTOR 538 BD538C transistor k 538
Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE TO -220 • Complement to BD533, BD535 and BD537 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B ase V o lta g e Symbol

GS 78L05 N

Contextual Info: Philips Semiconductors b b S 3 T 31 7 ? a • Ap X ^P ro d u ctsp ecificat^ VHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE BLF248 bR E D PIN CONFIGURATION FEATURES • High power gain • Easy power control 1 • Good thermal stability /~i • Gold metallization ensures

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

2SA1362

Contextual Info: 2SA1362 LOW FREQUENCY POWER AMPLIFIER TRANSISTOR P -N -P transistor M ark in g 2SA1362 = AE P A C K A G E O U T L IN E D ETA ILS A LL D IM E N S IO N S IN m m 3.0 ~2.B Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 X I tJ 3 1.02J 0.89 2 .00_

13005f

Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13005F TO-220FP Fully Isolated Plastic Package B CE High Voltage Switch Mode Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

13007f

Abstract: transistor 13007f e 13007f E 13007 MARKING CODE CDL CDL13007F
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN PLASTIC POWER TRANSISTOR CDL13007F TO-220FP Fully Isolated Plastic Package B CE High Voltage Switch Mode Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

CFD1025

Abstract: 200V darlington transistor To-220
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Manufacturer NPN PLANAR POWER DARLINGTON TRANSISTOR CFD1025 TO-220FP Fully Isolated Plastic Package B CE Power Darlington for use in Linear Switching Applications ABSOLUTE MAXIMUM RATINGS

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR J A J A - 2SC4843 V H F ~U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm 2.1 J:0.1 Low N oise F igure, H igh G ain. N F = l .l d B , |S 2 le l2 = 1 5 .5 d B f= lG H z

MARKING CODE 24

Contextual Info: DISCRETE SEMICONDUCTORS B IT Â S y i I T PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 03 PHILIPS Philips Semiconductors Product specification

CFB1017

Abstract: CFD1408
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP POWER TRANSISTOR CFB1017 TO-220FP Fully Isolated Plastic Package B CE Power Amplifier Applications Complementary CFD1408 ABSOLUTE MAXIMUM RATINGS Tc=25ºC VCEO VEBO VALUE

L 3005 TRANSISTOR

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR POWER TRANSISTOR CFC5511 TO-220FP Fully Isolated Plastic Package B CE Complementary CFA2005 ABSOLUTE MAXIMUM RATINGS DESCRIPTION