TRANSISTOR B 1417 Search Results

Contextual Info: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and

PC9203

Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
Contextual Info: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439

1417-2

Abstract: Load VSWR tolerance CAV 444 1417 ic
Contextual Info: 1417-2 2 Watt "28 Volts’ Class c CHz TECHNOLOGY »FMicKowAVE silicon powe > T»*N5HTo«i M ic ro w a v e 1 4 0 0 - 1 7 0 0 GENERAL DESCRIPTION M H z CASE OUTLINE The 1417-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is

Contextual Info: il m a n -* i lC iO S & n il W p S H i S mm£ ? ^40 C o m m e rce D rive M o n tg o m e ry v ilie , PA 18936-1013 Tel: 215)631-9840 TC C 1417“25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4-1,7GHz POWER OUT 25W POWER GAIN

44w TRANSISTOR

Abstract: BV 1351 24V epsilam 10 mb 8936 M147 TCC1417-25 sd1066 1029f 1417-25
Contextual Info: H * : I f/ lv f T»j-m ! fII P ro g re s s P o w e re d b y T ec h no log y "*4 Commerce Drive Montgom ery ville, PA 18936-1013. Tel: 215 631-9840 TC C 1417-25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4 1.7GHz POWER OUT

transistor BT 139 F applications note

Abstract: 12W 60 chip transistor TIC 122 Transistor BLT71 transistor BR 471 A Transistor A 471 TRANSISTOR S 813 FC 0137 9746 transistor 1199
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLT71 FEATURES • Very high efficiency • Low supply voltage. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communications band. DESCRIPTION

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

PCF7931AS

Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Contextual Info: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

NRZL block diagram

Abstract: LT 5337 767.2 transistor LC resonant MCRF355 153 kHz RFID Manchester c source code using PIC A 673 C2 transistor cloak tag rf 200B
Contextual Info: M MCRF355/360 13.56 MHz Passive RFID Device with Anti-Collision FEATURES • • • • • • • • • • • • Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user-reprogrammable memory On-board 100 ms sleep timer

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

tda8362b

Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
Contextual Info: Philips Semiconductors Product Discontinuation Notice DN45 June 30, 2001 SEE DN45 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

tag 8833

Abstract: IC LM 393 N LM 352 voltage regulator Ic 13,56 MHz RFID antenna receiver of rfid tag Bi-phase-L Coding IC LM 393 N pin details 125 kHz RFID tag antenna power supply of uv curing lamp RF inductor 13.56 MHz
Contextual Info: MCRF355 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • • • • • • • Package Type Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer

ms 7254 ver 1.1

Abstract: ms 7254 ver 3.0 T557
Contextual Info: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

M514170

Abstract: ZIP40-P-475
Contextual Info: O K I Semiconductor MSM5 14170 A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM514170A/ASL is OKI's CMOS silicon gate process

thomson tv circuit diagram tea2261

Abstract: tea2261 equivalent OREGA TEA2261 CNX62 equivalent ic tea 2028 12v 120W AUDIO AMPLIFIER CIRCUIT DIAGRAM BZX85-3V0 transistor equivalent bc547c BY299 equivalent
Contextual Info: APPLICATION NOTE TEA2260/TEA2261 HIGH PERFORMANCE DRIVER CIRCUITS FOR S.M.P.S SUMMARY Page I I.1 I.2 I.3 I.4 I.5 INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MASTER SLAVE MODE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Transistor BJT High Current

Abstract: transistor 1N4148 24v to HV8061 h bridge bjt LQH4N102K04M
Contextual Info: ¡H C HV8061 HV8063 - Prelim inary High-Voltage EL Lamp Driver Ordering Information Package Options Device Input Voltage HV8061 HV8063 8-Lead SO 14-Lead SO Die 1.0V to 1.6V HV8061LG HV8061NG HV8061X 2.4V to 3.5V HV8063LG HV8063NG HV8063X Features General Description

phoenix contact MCR R I 4v

Abstract: transistor MCR 400
Contextual Info: MCR-S-.-DCI Current transducers up to 50 A programmable and configurable 1. Short description • progressive adjustment of measuring range • true r.m.s. value measurement • electrical 3-way isolation in acc. with EN 61010 • with optional relay and transistor output

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Contextual Info: HV8061 HV8063 Preliminary High-Voltage EL Lamp Driver Ordering Information Package Options Device Input Voltage 8-Lead SO 14-Lead SO Die HV8061 1.0V to 1.6V HV8061 LG HV8061NG HV8061X HV8063 2.4V to 3.5V HV8063LG HV8063NG HV8063X Features General Description

transistor 4205

Abstract: smd transistor v9 i3 pin configuration diagram TLE 4202 B TO220-7 package TLE4202 Applications TLE 4202 B TLE 4202 TLE 4205 G TLE4202B
Contextual Info: TLE 4202 B 2-A DC Motor Driver Preliminary Data Bipolar IC Features ● ● ● ● ● ● ● Drives motors up to 2 A Integrated free-wheeling diodes 2.5 A Short-circuit proof to ground Overtemperature protection Low saturation voltages through bootstrap

BYV27

Abstract: REGULATOR IC 377 PLASTIC PACKAGE microstepping 3717
Contextual Info: February 1999 PBL 377 70/1 High Performance Stepper Motor Drive Circuit Description Key Features PBL 377 70/1 is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 377 17/1 and

SL2128

Abstract: MRF965 MRF961 BFRC96 case 317-01
Contextual Info: MOTOROLA SC XSTRS/R F 4bE b3b7HS4 D 00=14173 b • MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H FREQ UENCY TRANSISTORS The B FR 96 series transistors use the same state-of-the-art m icro ­