TRANSISTOR B 1417 Search Results

Contextual Info: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and

Contextual Info: MOTOROLA SC {DIOD ES/OPTOJ 6367255 MOTOROLA 34 SC D eT | t , 3 b 7 2 5 5 D IO D ES/O PTO r O D3 f l ED ö 4 aoono MICRO-T (continued) '5 l~ n MMT2060 — NPN RF AMPLIFIER TRANSISTOR • designed for high-gain, low noise amplifier, oscillator and mixer applications.

PC9203

Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
Contextual Info: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439

1417-2

Abstract: Load VSWR tolerance CAV 444 1417 ic
Contextual Info: 1417-2 2 Watt "28 Volts’ Class c CHz TECHNOLOGY »FMicKowAVE silicon powe > T»*N5HTo«i M ic ro w a v e 1 4 0 0 - 1 7 0 0 GENERAL DESCRIPTION M H z CASE OUTLINE The 1417-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is

17gh

Contextual Info: m m B & F P rci'jifcts m Microsemi f'NWnws iy 140 Com merce Drive Montgomeryville, PA 18936-1013 Tel: <215 631-9840 TCC 1417-25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICAI FREQUENCY 1 .4 1.70Hz POWSR OUT 2SW POWER OAiM S OdB V O LTAG E

Contextual Info: il m a n -* i lC iO S & n il W p S H i S mm£ ? ^40 C o m m e rce D rive M o n tg o m e ry v ilie , PA 18936-1013 Tel: 215)631-9840 TC C 1417“25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4-1,7GHz POWER OUT 25W POWER GAIN

44w TRANSISTOR

Abstract: BV 1351 24V epsilam 10 mb 8936 M147 TCC1417-25 sd1066 1029f 1417-25
Contextual Info: H * : I f/ lv f T»j-m ! fII P ro g re s s P o w e re d b y T ec h no log y "*4 Commerce Drive Montgom ery ville, PA 18936-1013. Tel: 215 631-9840 TC C 1417-25 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.4 1.7GHz POWER OUT

transistor BT 139 F applications note

Abstract: 12W 60 chip transistor TIC 122 Transistor BLT71 transistor BR 471 A Transistor A 471 TRANSISTOR S 813 FC 0137 9746 transistor 1199
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLT71 FEATURES • Very high efficiency • Low supply voltage. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communications band. DESCRIPTION

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

Contextual Info: ◆Synchronous Step-Down DC/DC Converter with Built-In LDO Regulator Plus Voltage Detector ◆Step-Down DC/DC Converter's Output Connected In Parallel with LDO Regulator ◆SOP-8 Package For High Current ◆Small-Footprint ◆Output Current :DC/DC:800mA, VR: 400mA

PCF7931AS

Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Contextual Info: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

NRZL block diagram

Abstract: LT 5337 767.2 transistor LC resonant MCRF355 153 kHz RFID Manchester c source code using PIC A 673 C2 transistor cloak tag rf 200B
Contextual Info: M MCRF355/360 13.56 MHz Passive RFID Device with Anti-Collision FEATURES • • • • • • • • • • • • Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user-reprogrammable memory On-board 100 ms sleep timer

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

tag 8833

Abstract: IC LM 393 N LM 352 voltage regulator Ic 13,56 MHz RFID antenna receiver of rfid tag Bi-phase-L Coding IC LM 393 N pin details 125 kHz RFID tag antenna power supply of uv curing lamp RF inductor 13.56 MHz
Contextual Info: MCRF355 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • • • • • • • Package Type Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer

ms 7254 ver 1.1

Abstract: ms 7254 ver 3.0 T557
Contextual Info: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS

MCRF355

Abstract: DS21311 AN707 RFID Bi-phase-L Coding DS00710 MCRF360 AN707 up/AN707 RFID AN830 TB031
Contextual Info: MCRF355/360 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer Built-in anti-collision algorithm for reading up to

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

transistor b 1560

Abstract: 6 pin TRANSISTOR SMD CODE XI siemens stepper TCA1561 Q67000-A8208 T4 1560 TCA1560 Q67000-A8209 Q67000-A8272 TCA1560G
Contextual Info: SIE M E N S Stepper Motor Drivers TCA1561 B TCA1560 Advance Information: TCA 1S60 G Bipolar IC Features • • • • 2.5 A peak current High-speed integrated clam p diodes Simple drive Thermal overload protection with hysteresis Ordering Code Package 0 T C A 1561 B

diode BY100

Abstract: Power Diode BY100 orega flyback transformer BY100 transistor f344 BY100-200 TEA5170 TV flyback transformer BY100 diode TEA2164
Contextual Info: APPLICATION NOTE TEA5170 - SECONDARY CONTROLLER FOR MASTER-SLAVE STRUCTURE By T. PIERRE SUMMARY Page I INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II OPERATING PRINCIPLES OF MASTER-SLAVE STRUCTURE . . . . . . . . . . . . . . . . .

diode BY100

Abstract: Power Diode BY100 transistor f344 BY100-200 f344 orega flyback transformer TEA5170 an409 MASTER-SLAVE SMPS FOR TV BZX85
Contextual Info: APPLICATION NOTE TEA5170 - SECONDARY CONTROLLER FOR MASTER-SLAVE STRUCTURE By T. PIERRE SUMMARY Page I INTRODUCTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 II OPERATING PRINCIPLES OF MASTER-SLAVE STRUCTURE . . . . . . . . . . . . . . . . .

TCA160

Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Contextual Info: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;

M514170

Abstract: ZIP40-P-475
Contextual Info: O K I Semiconductor MSM5 14170 A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM514170A/ASL is OKI's CMOS silicon gate process