TRANSISTOR ARRAYS SOURCE Search Results

itt 3906

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
Contextual Info: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.

rf transistors amplifier design and matching network

Abstract: silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH ISL73128RH 6 "transistor arrays" ic
Contextual Info: Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor Arrays Introduction ISL73096RH This application note is focused on exploiting the RF design capabilities of ISL73096RH/ISL73127RH/ ISL73128RH transistor arrays. Detailed design

Q545

Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ
Contextual Info: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

plessey SL360

Abstract: SL360G SL360 SL362 SL362C cm8 transistor
Contextual Info: ADVANCE INFORMATION DS3625 - 1.1 SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices. They feature accurate parameter matching and close thermal

Contextual Info: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords

900mhz-1800mhz rf frequency amplifier circuit

Abstract: uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 HFA3128 SOI series shunt
Contextual Info: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

SL362C

Abstract: 362C plessey SL360 High Speed Switches SL360G
Contextual Info: PLESSEY SEMICONDUCTORS 12E 1 7ESG513 0GQ773tl ?| SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices. They feature accurate parameter matching and close

plessey SL360

Abstract: SL 100 NPN Transistor equivalent of SL 100 NPN Transistor
Contextual Info: SL360/SL362/SL1360/SL1362 PLESSEY Semiconductors SL360, SL1360, SL362 & SL1362 HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360, SL1360, SL362 and SL1362 are high perfor­ mance NPN dual transistor arrays fabricated as monolithic silicon devices. They feature accurate parameter matching

TRANSISTOR 642

Abstract: ca301b transistor 123 DL CA3018 CA3018A ICAN-5296 529B I426 f425 CA3016
Contextual Info: Arrays E SOLID STATE 01 1 e | 3075001 DGlMSfifl 5 | CA3018, CA3018A General-Purpose Transistor Arrays Two Isolated Transistors and a Darlington-Connected Transistor Pair For Low-Power Applications at Frequencies from DC Through the VHF Range features: Matched monolithic general

AN5296 Application of the CA3018 Integrated

Abstract: an5296 CA3146 CA3183 CA3183A CA3018 CA3046 CA3083 CA3146A CA3146AE
Contextual Info: CA3146, CA3146A, CA3183, CA3183A Data Sheet September 1998 File Number 532.4 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a common monolithic substrate. • Matched General Purpose Transistors

900mhz-1800mhz rf frequency amplifier circuit

Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
Contextual Info: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.

SL360G

Abstract: plessey SL360
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3625 - 1.1 SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices.

XR-2011

Abstract: XR2011 XR2013CN XR2013 XR-2012
Contextual Info: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic

SL362

Abstract: SL362C SL360 SL360G
Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3625 - 1.1 SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices.

2002cn

Abstract: XR-2001 XR-2001CN XR-2002 XR-2002CN XR-2003 XR-2003CN XR-2004 XR-2004CN
Contextual Info: Z * EXAR XR-2001/2/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM V The XR-2001/2002/2003/2004 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic

XR-2203

Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Contextual Info: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­

transistor ac 132

Abstract: MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic fla3019
Contextual Info: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ESC RIPTIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed

18P4G

Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP

CA3083

Abstract: Programmable Unijunction Transistor CA3183E CA3183AE "Programmable Unijunction Transistor" SCR firing unijunction thyristor firing circuit CA3097 unijunction application note ge scr package
Contextual Info: Transistor-continued Arrays General-Purpose High-Current N-P-N Transistor Arrays CA3083 CA3183 CA3183A A p p lica tio n s and Features 5 independent transistors plus separate substrate connection Matched pair Q1 arid Q 2 : V|Q (V fiE m atched): ± 5 m V m ax.

CA3103E

Abstract: ca3103 LVB 1.32 TA6103 CA3146E ca3183
Contextual Info: j j j CA3146, CA3183 HARRIS S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors The CA3146A, CA3146, CA31B3A, and CA3183* are general purpose high vollage silicon n-p-n transistor arrays

Contextual Info: GEC PLESSEY SEMICONDS M3E D 37bflS25 0Q13Mbb T M P L S S GEC PLESSEY 'T H V 'L S IS EMICO NDUCTORS I SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as m onolithic silicon devices.

CA3046 RCA

Abstract: ICAN-5296 CA304B CA3046 CA3045 RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6
Contextual Info: D E | 3fl7SDÛl 0014b0G 5 G E SOLID STATE 01 3875081 G Arrays _ SOLID S T AT E 0 1E 1 4 600 D CA3045, CA3046 General-Purpose N-P-N Transistor Arrays Three Isolated Transistors and One DifferentiallyConnected Transistor Pair For Low-Power Applications at Frequencies

an5296

Abstract: Harris CA3018 Harris CA3146e CA3018 CA3046 CA3083 CA3146 CA3146A CA3183 CA3183A
Contextual Info: CA3146, CA3183 S E M I C O N D U C T O R High-Voltage Transistor Arrays March 1993 Features Description • • • • • The CA3146A, CA3146, CA3183A, and CA3183* are general purpose high voltage silicon n-p-n transistor arrays on a common monolithic substrate.

HFA3046

Abstract: transistor arrays 5v uhf amplifier design Transistor
Contextual Info: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Sem iconductor A p p lic a t io n N o te N o v e m b e r 1996 Introduction This application note is focused on exploiting the FIF design capabilities of HFA3046/3096/3127/3128 transistor arrays.