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    TRANSISTOR AH 10 Search Results

    TRANSISTOR AH 10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR AH 10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 7518

    Abstract: TFK 450 BCW60C BCW60D BCW60
    Contextual Info: G estem pelt m it: 'W BCW60A BCW 60B BCW60C BCW60D BCX70G BCX70H BC X70J BCX70K M a r k e d w ith : AA AB AC AD AG AH AJ AK BCW 60 * BCX 70 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    BCW60C BCW60D 200Hz la 7518 TFK 450 BCW60 PDF

    LM114

    Abstract: LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100
    Contextual Info: ïïM M m \ll LM114IH, LM114A/AH Dual NPN Monolithic Transistor GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transis­ tors fabricated on a single silicon substrate. This m onolithic structure makes possible extrem ely tig ht parameter matching


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    LM114/H, LM114A/AH 300MHz 22MHz 10/iA l-125 LM114 LM114A, LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100 PDF

    Contextual Info: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r


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    2SB1197K SC-59) 2SB1197K; A/-50 PDF

    Contextual Info: na. TELEPHONE: 979 378*2922 (212) 227-8008 FAX: (973) 3784880 20 STERN AVE. SPfllNQRELD, NEW JERSEY 07081 U.SA 2N4997 N-P-N SILICON TRANSISTOR *AU JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE AH pIMENilONi IN INCHII —MK- 0.010 (NOT! A) .• N —H o'«> + A^—i r~H_


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    2N4997 PDF

    ITCH725D

    Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS


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    71-MOS 100nA ITCH725D PDF

    transistor Cd 18 p

    Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
    Contextual Info: 2SA1759 Transistor, PNP Features D im ensions Units : mm • av a ila b le in M P T 3 (M PT, S C -6 2 ) p a cka g e • p a c k a g e m arking: 2 S A 1 7 5 9 ; AH-*, w h ere ★ is hFE co d e • high breakdow n voltage, 2SA1759 (MPT3) V ceo = “ 400 V


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    2SA1759 SC-62 transistor Cd 18 p ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor PDF

    2n7000 equivalent

    Abstract: transistor 2n7000 field effect transistor 2n7000 N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000
    Contextual Info: N-Channel Enhancement Mode Field Effect Transistor 2N7000 N-Channel Enhancement Mode Field Effect Transistor Features • • • • • High density cell design for low RDS ON Voltage controlled small signal switch Rugged and reliable High saturation current capability


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    2N7000 MIL-STD-202G, 2N7000 2n7000 equivalent transistor 2n7000 field effect transistor N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000 PDF

    08-Oct-97

    Contextual Info: Temic BUF7216 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


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    BUF7216 D-74025 08-Oct-97 08-Oct-97 PDF

    Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage


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    KSB596 KSD526 GQG77fe PDF

    MEL12

    Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
    Contextual Info: TYPE NO. CL138 POLARITY Photo Transistor P d mW 1 C (mA) V CEO (V) MIN MAX N* 300 100 18 15 MAXIMUM RATINGS 1 I L (rrw CASE D (nA) max V CE (V) PACKAGE H (mW/cm2) V CE (V) 80 2 3 1000 5 TO-106 1-49 5 5 5 5 5 5 100 100 100 5 5 5 TO-106 1-49 NO. FPT100 FPT100A


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    CL138 O-106 FPT100 FPT100A FPT100B FPT110 FPT110A O-106F FPT110B MEL12 MAL100 MEL31 MEL32 mel32 photo transistor MEL11 PDF

    transistor equivalent of 2N5401

    Contextual Info: S A MS UN G SE MICONDU CTOR INC MPSL51 ! 1 4E D | 7*^4142 00073^2 1 | PNP EPITAXIAL SILICON TRANSISTOR “ ‘ " T-29-21 AMPLIFIER TRANSISTOR • Collector-Em ltter Voltage: Vceo=100V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C)


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    MPSL51 T-29-21 625mW 2N5401 transistor equivalent of 2N5401 PDF

    JE2955T

    Abstract: JE2955
    Contextual Info: SAMSUNG SEMICONDUCTOR IME O I INC MJE2955T 7*11,4142 G0077Gfl 5 | PNP SILICON TRANSISTOR T- GENERAL PURPOSE A n 6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES 2 • High Current Galn-Bandwldth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )


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    MJE2955T G0077Gfl GQG77fe JE2955T JE2955 PDF

    transistor SMD n 03a

    Contextual Info: Temic BUD600 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature


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    BUD600 BUD600 D-74025 18-Jul-97 transistor SMD n 03a PDF

    1b.1 smd transistor

    Abstract: transistor SMD n 03a 1B1 SMD 1B2 SMD smd TRANSISTOR AH transistor 1B2 SMD SMD Transistor 1B2
    Contextual Info: Temic Som ii « h BUD616A d i h t i r s Silicon NPN High Voltage Switching Transistor Features • • • • • Simple-sWitch-Off Transistor (SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses • • • •


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    BUD616A BUD616A D-74025 18-Jul-97 1b.1 smd transistor transistor SMD n 03a 1B1 SMD 1B2 SMD smd TRANSISTOR AH transistor 1B2 SMD SMD Transistor 1B2 PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BCX53 SOT-89 TRANSISTOR PNP FEATURES Power dissipation PCM: 0.5 Collector current ICM: -1 Collector-base voltage V(BR)CBO: -100 1. BASE 2. COLLECTOR W (Tamb=25℃)


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    OT-89 BCX53 OT-89 150mA -500mA BCX53-10 BCX53-16 BCX53 BCX53-10 PDF

    4n27 opto isolator

    Abstract: 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c 340 opto isolator ic 4n26 opto isolator 4n26 4N26
    Contextual Info: 1-22 Coupled Characteristics Max Ratings @ T^ = 25°C Output Pd mW Transistor •c v CEO mA V 4N25<4> Trans 250 — 4N26<4> Trans 250 — Device No. Diode Min Current Transfer Ratio Ic / I f @*f @V c e % mA V Vr V |= mA v lSO kV 3.0 80 2.5 20 10 10 30 3.0


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    4N27W 4n27 opto isolator 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c 340 opto isolator ic 4n26 opto isolator 4n26 4N26 PDF

    Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n


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    PH1214-100EL PDF

    Contextual Info: Transistor B minil^eel NPN H atin g s mlnlBefif Bui* 500 pcs T yp e N PN G en eral P urpo se 73-2369 MMBT2369 73-8181 BC818-16 73-8182 BC818 25 73-8183 BC818 40 100 pcs 53-2369 53-8181 53-8182 53-8183 VCEO V Ic mA hFE M in-M ax @ lc VCE 15V 500mA 10mA@1V 25V


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    MMBT2369 BC818-16 BC818 500mA 100mA 100MHz BC846A BC848B PDF

    BUD620

    Abstract: E2 p SMD Transistor
    Contextual Info: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate


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    BUD620 BUD620 D-74025 18-Jul-97 E2 p SMD Transistor PDF

    AL SOT-89

    Abstract: BCX53-16 BCX53-16-AL BCX53 BCX53-10
    Contextual Info: BCX53 PNP Plastic-Encapsulate Transistor P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS ( TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage


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    BCX53 OT-89 BCX53 BCX53-10 BCX53-16 -50mA -500mA -150mA BCX53-10 AL SOT-89 BCX53-16-AL PDF

    Contextual Info: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function


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    PF400-07 SCI7630M/C SCI7363/7632/7635/7636/7639M/C) SCI7630M SCI7630M/C PDF

    VARTA 4020

    Abstract: Varta Industrial D LR20 ALKALINE LR20 VARTA 4020 LR20 alkaline varta Batteries Varta 1,5 V Energy TRANSISTOR AH Transistor AH 10 LR20 7D transistor varta lr20
    Contextual Info: VARTA Industrial Data Sheet 4020 Recommended Application: Universal Type Designation Designation IEC System 4020 LR20 Zn-MnO2 Alkaline Shelf Life (Coding)* 5 years Nominal Voltage [V] Typical Capacity C [mAh] Permissible Temperature Range 1.5 16500 (discharge with high-resistance)


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    2SK34

    Abstract: Silicon N Chanel high speed power switching SK34 DIODE
    Contextual Info: SEP 25*00 06:01 »CCT-FAX* HHo:05250258 <Norial iiessage> From:67361 10:33745 [Alt.] P0Q6/017 0UT:0001 TKY0808-T T O S H I B A _ 2SK3437 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt - M O S V 2 SK34 3 7 HIGH SPEED,HIGH VOLTAGE SWITCHING APPLICATIONS


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    P0Q6/017 TKY0808-T 2SK3437 2SK34 Silicon N Chanel high speed power switching SK34 DIODE PDF

    Contextual Info: tPioducki, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N997 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 N-P-N PLANAR SILICON TRANSISTOR TWO TRIODES INTERNALLY CONNECTED IN DARLINGTON CONFIGURATION VERY HIGH GRAIN - 100MIN AT 100UA


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    2N997 100MIN 100UA PDF