TRANSISTOR AH 10 Search Results
TRANSISTOR AH 10 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLA1011-2 |
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Avionics LDMOS transistor |
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RX1214B300YI |
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RX1214B300Y - Microwave Power Transistor |
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CA3127MZ |
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CA3127 - Transistor Array |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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TRANSISTOR AH 10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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la 7518
Abstract: TFK 450 BCW60C BCW60D BCW60
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BCW60C BCW60D 200Hz la 7518 TFK 450 BCW60 | |
LM114
Abstract: LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100
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LM114/H, LM114A/AH 300MHz 22MHz 10/iA l-125 LM114 LM114A, LM114D Monolithic Transistor Pair LM114A LM114AH LM114H alc100 | |
Contextual Info: 2SB1197K Transistor, PNP Features Dimensions Units : mm • available In SMT3 (SMT, SC-59) package • package marking: 2SB1197K; AH-*, where ★ is hFE code • 2SB1197K (SMT3) 1.9±0.2 low collector saturation voltage 0.96 a (2 )[ 2.4 V CE(sat) - “ ° - 5 v f o r |
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2SB1197K SC-59) 2SB1197K; A/-50 | |
Contextual Info: na. TELEPHONE: 979 378*2922 (212) 227-8008 FAX: (973) 3784880 20 STERN AVE. SPfllNQRELD, NEW JERSEY 07081 U.SA 2N4997 N-P-N SILICON TRANSISTOR *AU JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE AH pIMENilONi IN INCHII —MK- 0.010 (NOT! A) .• N —H o'«> + A^—i r~H_ |
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2N4997 | |
ITCH725DContextual Info: TOSHIBA -CDISCRETE/OPTOJ- 9097250 TOSHIBA ^aHììln CDI S C R E T E / O P T O “H DeTJ B O T O S O 990 16647 D 0 1 L t 47 b DT-3Ì-I3 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 5 5 SILICON N CHANNEL MOS TYPE <7T-MOS ) TECHNICAL DATA INDUSTRIAL APPLICATIONS |
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71-MOS 100nA ITCH725D | |
transistor Cd 18 p
Abstract: ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor
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2SA1759 SC-62 transistor Cd 18 p ic MARKING FZ 2SA1759 7028 TRANSISTOR marking 7T transistor | |
2n7000 equivalent
Abstract: transistor 2n7000 field effect transistor 2n7000 N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000
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2N7000 MIL-STD-202G, 2N7000 2n7000 equivalent transistor 2n7000 field effect transistor N-Channel Enhancement Mode Field Effect Transistor Transistor AH 10 equivalent of 2n7000 TRANSISTOR AH TRANSISTOR2N7000 | |
08-Oct-97Contextual Info: Temic BUF7216 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature |
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BUF7216 D-74025 08-Oct-97 08-Oct-97 | |
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage |
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KSB596 KSD526 GQG77fe | |
MEL12
Abstract: MAL100 MEL31 MEL32 mel32 photo transistor CL138 MEL11 FPT100B FPT100 FPT100A
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CL138 O-106 FPT100 FPT100A FPT100B FPT110 FPT110A O-106F FPT110B MEL12 MAL100 MEL31 MEL32 mel32 photo transistor MEL11 | |
transistor equivalent of 2N5401Contextual Info: S A MS UN G SE MICONDU CTOR INC MPSL51 ! 1 4E D | 7*^4142 00073^2 1 | PNP EPITAXIAL SILICON TRANSISTOR “ ‘ " T-29-21 AMPLIFIER TRANSISTOR • Collector-Em ltter Voltage: Vceo=100V • C ollector D issipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) |
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MPSL51 T-29-21 625mW 2N5401 transistor equivalent of 2N5401 | |
JE2955T
Abstract: JE2955
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MJE2955T G0077Gfl GQG77fe JE2955T JE2955 | |
transistor SMD n 03aContextual Info: Temic BUD600 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature |
OCR Scan |
BUD600 BUD600 D-74025 18-Jul-97 transistor SMD n 03a | |
1b.1 smd transistor
Abstract: transistor SMD n 03a 1B1 SMD 1B2 SMD smd TRANSISTOR AH transistor 1B2 SMD SMD Transistor 1B2
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BUD616A BUD616A D-74025 18-Jul-97 1b.1 smd transistor transistor SMD n 03a 1B1 SMD 1B2 SMD smd TRANSISTOR AH transistor 1B2 SMD SMD Transistor 1B2 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BCX53 SOT-89 TRANSISTOR PNP FEATURES Power dissipation PCM: 0.5 Collector current ICM: -1 Collector-base voltage V(BR)CBO: -100 1. BASE 2. COLLECTOR W (Tamb=25℃) |
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OT-89 BCX53 OT-89 150mA -500mA BCX53-10 BCX53-16 BCX53 BCX53-10 | |
4n27 opto isolator
Abstract: 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c 340 opto isolator ic 4n26 opto isolator 4n26 4N26
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4N27W 4n27 opto isolator 4N2S 4n26 opto isolator opto 4n25 4N25 transistor C 547 c 340 opto isolator ic 4n26 opto isolator 4n26 4N26 | |
Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 100W, 2ms Pulse, 20% Duty 1.2 -1.4 GHz PH1214-100EL V2.01 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d Class C O p eratio n |
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PH1214-100EL | |
Contextual Info: Transistor B minil^eel NPN H atin g s mlnlBefif Bui* 500 pcs T yp e N PN G en eral P urpo se 73-2369 MMBT2369 73-8181 BC818-16 73-8182 BC818 25 73-8183 BC818 40 100 pcs 53-2369 53-8181 53-8182 53-8183 VCEO V Ic mA hFE M in-M ax @ lc VCE 15V 500mA 10mA@1V 25V |
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MMBT2369 BC818-16 BC818 500mA 100mA 100MHz BC846A BC848B | |
BUD620
Abstract: E2 p SMD Transistor
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BUD620 BUD620 D-74025 18-Jul-97 E2 p SMD Transistor | |
AL SOT-89
Abstract: BCX53-16 BCX53-16-AL BCX53 BCX53-10
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BCX53 OT-89 BCX53 BCX53-10 BCX53-16 -50mA -500mA -150mA BCX53-10 AL SOT-89 BCX53-16-AL | |
Contextual Info: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function |
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PF400-07 SCI7630M/C SCI7363/7632/7635/7636/7639M/C) SCI7630M SCI7630M/C | |
VARTA 4020
Abstract: Varta Industrial D LR20 ALKALINE LR20 VARTA 4020 LR20 alkaline varta Batteries Varta 1,5 V Energy TRANSISTOR AH Transistor AH 10 LR20 7D transistor varta lr20
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2SK34
Abstract: Silicon N Chanel high speed power switching SK34 DIODE
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P0Q6/017 TKY0808-T 2SK3437 2SK34 Silicon N Chanel high speed power switching SK34 DIODE | |
Contextual Info: tPioducki, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N997 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 N-P-N PLANAR SILICON TRANSISTOR TWO TRIODES INTERNALLY CONNECTED IN DARLINGTON CONFIGURATION VERY HIGH GRAIN - 100MIN AT 100UA |
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2N997 100MIN 100UA |