IVN5000
Abstract: IVN5001
Contextual Info: IVN5000,1 AN Series FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes aE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. .7 AMPERES 40-100 VOLTS
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AN-A002
Abstract: AN-G002 testing amplifier circuit ATF-10136 TF-10136 low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System
Contextual Info: W hpfiM %PH AE CWKLAERT DT mL' AN-G 002 A TF-10136 Dem onstration Am plifier Novem ber, 1990 Introduction This Applications Bulletin describes a one stage low noise am plifier designed using the HP ATF-10136 G aAs FET transistor. This amplifier demonstrates the capabilities of this
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tf-10136atf-10136atf101365091-4863e+8an-a002an-g002testing amplifier circuitlow noise design atf 10136stub tuner matching10136stub tuner waveguideam noise reduction system
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B 0920
Abstract: Philips X7R Philips npo 0805 SOT343 C5 RNR-T45-97-B-0920 bfg540w/x 0805CS transistor model list B0920 TRANSISTOR noise figure measurements
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The
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rnr-t45-97-b-0920400mhzbfg540w/xb 0920+7philips x7rphilips npo 0805sot343 c50805cstransistor model listb0920transistor noise figure measurements
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2n2222+spice+model
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The
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HHB8
Contextual Info: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o BN1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #
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i0485
Abstract: F506 pw510 m86s TS33 X108 TC-6058 transistor 3E l 0534 tc6058
Contextual Info: Compound Transistor Î&î/LF*9M N P N X ti ìs7 \,Wi > lJ □ V n m HMm ¥ f i o;< j 7 x m n .£ f à M lX ^ È - f : m m ) 2 .8 ± 0 .2 ( R i = 22 k Q ) 0 .65 1.5 o F N 1 F 4 Z t 3 > 7°!) 9 > 9 IJ T i È f f l 'C è È t D (T a = 25 °C ) il a «s aE -?-
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pw510cycles50i0485f506+7m86sts33x108tc-6058transistor 3el 0534tc6058
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HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design
Contextual Info: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC
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40pa/pm2200pa/pm2hf mismatch characterization and modeling of bipolar transistors for rfic design |
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HBT 01 - 05
Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Contextual Info: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna
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90ghzhbt 01 - 05dr 25 germanium diodehbt 01 05g+7silicon germanium heterojunction bipolar transistorgermanium small signal transistorspoly silicon resistor1lm20.18 um cmos parametershbt 05hbt 01 - 01 g
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Camera AF actuator
Abstract: but 11 af transistor
Contextual Info: Ordering number : ENA0482 LV8052GP LV8052LP Bi-CMOS IC For Digital Still Camera Single-Chip Motor Driver IC Overview The LV8052GP, LV8052LP is a single-chip motor driver IC for digital still camera. Functions • DSC actuator driver incorporated in a single chip
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ena0482lv8052gplv8052lpa0482-13/13+2camera af actuatorbut 11 af transistor
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hartley oscillator mc13146
Abstract: H5X2 MC12054 MC13145 MC13146 MC13146FTA MC33410 MMBV809L MMBV809LT1 VCO transistor
Contextual Info: Order this document by MC13146/D MC13146 Low Power Integrated Transmitter for ISM Band Applications LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage
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mc13146/dmc13146mc13145mc33410+8mc33411a/bhartley oscillator mc13146h5x2mc12054mc13146ftammbv809lmmbv809lt1vco transistor
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Camera AF actuator
Abstract: LV8052LP D1306 LV8052GP VCT24
Contextual Info: Ordering number : ENA0482A LV8052GP LV8052LP Bi-CMOS IC For Digital Still Camera Single-Chip Motor Driver IC Overview The LV8052GP, LV8052LP is a single-chip motor driver IC for digital still camera. Functions • DSC actuator driver incorporated in a single chip
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ena0482alv8052gplv8052lpa0482-13/13+3camera af actuatord1306vct24
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hartley oscillator mc13146
Abstract: pmx 2000 mixer MC13146 MC12054 MC13145 MC13146FTA MC33410 MMBV809L MMBV809LT1 632 transistor motorola
Contextual Info: Order this document by MC13146/D 3 MC13146 Low Power Integrated Transmitter for ISM Band Applications LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage
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mc13146/dmc13146mc13145mc33410+8mc33411a/bhartley oscillator mc13146pmx 2000 mixermc12054mc13146ftammbv809lmmbv809lt1632 transistor motorola
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epcos r727
Abstract: epcos r705 SMD CODE L01 433.92 Mhz two-port saw resonator colpitts oscillator L03 SMD smd-transistor code book 433.92 transmitter, pcb layout smd-transistor DATA BOOK R727
Contextual Info: Application Note SAW-Components Principles of SAWR-stabilized oscillators and transmitters. App: Note #1 This application note describes the physical principle of SAW-stabilized oscillator. Oscillator structures for one- and two-port SAW resonators are discussed.
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92mhzd-81617epcos r727epcos r705+8smd code l01433.92 mhz two-port saw resonatorcolpitts oscillatorl03 smdsmd-transistor code book433.92 transmitter, pcb layoutsmd-transistor data bookr727
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mc3363 application note
Abstract: CFW455 SFE10.7MS2-A j350 TRANSISTOR H1 SOT-89 transistor rf MC3357 application note MC3363DW
Contextual Info: MC3363 Low Power Dual Conversion FM Receiver The MC3363 is a single chip narrowband VHF FM radio receiver. It is a dual conversion receiver with RF amplifier transistor, oscillators, mixers, quadrature detector, meter drive/carrier detect and mute circuitry. The
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mc3363mc3363 application notecfw455sfe10.7ms2-a+4j350 transistorh1 sot-89 transistor rfmc3357 application notemc3363dw
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antenna 434MHz
Abstract: design oscillator pierce Application Notes transistor AE RF application of LC oscillator 868MHz antenna 868MHZ PCB 868-MHz transistor use in oscillator 915MHz pierce oscillator
Contextual Info: Application Note SAW-Components Comparison between negative impedance oscillator Colpitz oscillator and feedback oscillator (Pierce structure) App.: Note #13 Author: Updated: Version: Department: Alexander Glas June 19, 2001 1.1 SAW CE AE PD EPCOS AG SAW Components
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d-81617antenna 434mhzdesign oscillator pierce application notestransistor ae rf+7application of lc oscillator868mhzantenna 868mhz pcb868-mhztransistor use in oscillator915mhzpierce oscillator
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Contextual Info: Freescale Semiconductor, Inc.Order this document by MC13146/D MC13146 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage
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hartley oscillator mc13146
Abstract: an169 MMBV809L equivalent 539 MOTOROLA transistor pmx 2000 mixer b 803 a MC12054 MC13145 MC13146 MC13146FTA
Contextual Info: Freescale Semiconductor, Inc.Order this document by MC13146/D MC13146 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage
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mc13146/dmc13146mc13145mc33410+9mc33411a/bhartley oscillator mc13146an169mmbv809l equivalent539 motorola transistorpmx 2000 mixerb 803 amc12054mc13146fta
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Contextual Info: Order this document from Analog Marketing MC13142 Prototype Information Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band
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LNA Mixer VCO 2.4 GHz
Abstract: TQFP-20 Intermediate frequency transformer TOKO CERAMIC FILTER 450 clapp oscillator transistor Common collector configuration SO16 footprint rf receiver circuit image frontend filter RF LNA 10 GHz
Contextual Info: Order this document from Analog Marketing MC13142 Product Preview Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band
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mc13142mc13142/dlna mixer vco 2.4 ghztqfp-20+8intermediate frequency transformertoko ceramic filter 450clapp oscillatortransistor common collector configurationso16 footprintrf receiver circuit imagefrontend filterrf lna 10 ghz
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HF 8311 transistor
Abstract: Wavetek 134 SND PH 0205
Contextual Info: MC13158 Wideband FM IF Subsystem The MC13158 is a wideband IF subsystem that is designed for high performance data and analog applications. Excellent high frequency performance is achieved, with low cost, through the use of Motorola’s MOSAIC 1.5 RF bipolar process. The MC13158 has an on–board
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lm 4572 SMD 8 PIN
Abstract: 2904 SMD IC SMD TRANSISTOR H2A NPN smd transistor h2a SMD H2A motorola smd transistor code 935 smd code H2A 0011 TRANSISTOR transistor smd H2A h2a smd
Contextual Info: MC13142 Product Preview Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band
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mc13142lm 4572 smd 8 pin2904 smd icsmd transistor h2a npn+7smd transistor h2asmd h2amotorola smd transistor code 935smd code h2a0011 transistortransistor smd h2ah2a smd
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SE701
Abstract: VDMOS
Contextual Info: polyfet rf devices SE701 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances,
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41 BF transistor
Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage
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r-33-bf869sabf871t012615a3din+1041 bf transistortransistor bf 235transistor bf 254869stransistor marking code 41 bfbf869stransistor bf 871sbf871sbf869s transistortransistor bf 44
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Motorola L6 phone PCB diagram
Abstract: Bandpass filter SAW 2.4 GHz 50 Ohm overtone oscillator mc13146 Motorola L6 phone schematic diagram tdk 4.0 mc 10M7 600ENAS A998EK MC12053 MC13145
Contextual Info: Order this document by MC13145/D MC13145 Low Power Integrated Receiver for ISM Band Applications UHF WIDEBAND RECEIVER SUBSYSTEM LNA, Mixer, VCO, Prescalar, IF Subsystem, Coilless Detector The MC13145 is a dual conversion integrated RF receiver intended for
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mc13145/dmc13145mc13146mc33410+10mc33411a/bmotorola l6 phone pcb diagrambandpass filter saw 2.4 ghz 50 ohmovertone oscillator mc13146motorola l6 phone schematic diagramtdk 4.0 mc10m7600enasa998ekmc12053
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