TRANSISTOR AE RF Search Results

IVN5000

Abstract: IVN5001
Contextual Info: IVN5000,1 AN Series FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes aE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. .7 AMPERES 40-100 VOLTS

B 0920

Abstract: Philips X7R Philips npo 0805 SOT343 C5 RNR-T45-97-B-0920 bfg540w/x 0805CS transistor model list B0920 TRANSISTOR noise figure measurements
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The

HHB8

Contextual Info: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o BN1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #

i0485

Abstract: F506 pw510 m86s TS33 X108 TC-6058 transistor 3E l 0534 tc6058
Contextual Info: Compound Transistor Î&î/LF*9M N P N X ti ìs7 \,Wi > lJ □ V n m HMm ¥ f i o;< j 7 x m n .£ f à M lX ^ È - f : m m ) 2 .8 ± 0 .2 ( R i = 22 k Q ) 0 .65 1.5 o F N 1 F 4 Z t 3 > 7°!) 9 > 9 IJ T i È f f l 'C è È t D (T a = 25 °C ) il a «s aE -?-

HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

Contextual Info: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC

HBT 01 - 05

Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
Contextual Info: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna

hartley oscillator mc13146

Abstract: H5X2 MC12054 MC13145 MC13146 MC13146FTA MC33410 MMBV809L MMBV809LT1 VCO transistor
Contextual Info: Order this document by MC13146/D MC13146 Low Power Integrated Transmitter for ISM Band Applications LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage

mc3363 application note

Abstract: CFW455 SFE10.7MS2-A j350 TRANSISTOR H1 SOT-89 transistor rf MC3357 application note MC3363DW
Contextual Info: MC3363 Low Power Dual Conversion FM Receiver The MC3363 is a single chip narrowband VHF FM radio receiver. It is a dual conversion receiver with RF amplifier transistor, oscillators, mixers, quadrature detector, meter drive/carrier detect and mute circuitry. The

Contextual Info: Freescale Semiconductor, Inc.Order this document by MC13146/D MC13146 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage

hartley oscillator mc13146

Abstract: an169 MMBV809L equivalent 539 MOTOROLA transistor pmx 2000 mixer b 803 a MC12054 MC13145 MC13146 MC13146FTA
Contextual Info: Freescale Semiconductor, Inc.Order this document by MC13146/D MC13146 ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 LOW POWER DC – 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 Ω linear Mixer with linearity control, voltage

Contextual Info: Order this document from Analog Marketing MC13142 Prototype Information Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band

LNA Mixer VCO 2.4 GHz

Abstract: TQFP-20 Intermediate frequency transformer TOKO CERAMIC FILTER 450 clapp oscillator transistor Common collector configuration SO16 footprint rf receiver circuit image frontend filter RF LNA 10 GHz
Contextual Info: Order this document from Analog Marketing MC13142 Product Preview Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band

HF 8311 transistor

Abstract: Wavetek 134 SND PH 0205
Contextual Info: MC13158 Wideband FM IF Subsystem The MC13158 is a wideband IF subsystem that is designed for high performance data and analog applications. Excellent high frequency performance is achieved, with low cost, through the use of Motorola’s MOSAIC 1.5 RF bipolar process. The MC13158 has an on–board

lm 4572 SMD 8 PIN

Abstract: 2904 SMD IC SMD TRANSISTOR H2A NPN smd transistor h2a SMD H2A motorola smd transistor code 935 smd code H2A 0011 TRANSISTOR transistor smd H2A h2a smd
Contextual Info: MC13142 Product Preview Low Power DC - 1.8 GHz LNA, Mixer and VCO LOW POWER DC – 1.8 GHz LNA, MIXER and VCO The MC13142 is intended to be used as a first amplifier, voltage controlled oscillator and down converter for RF applications. It features wide band

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

Motorola L6 phone PCB diagram

Abstract: Bandpass filter SAW 2.4 GHz 50 Ohm overtone oscillator mc13146 Motorola L6 phone schematic diagram tdk 4.0 mc 10M7 600ENAS A998EK MC12053 MC13145
Contextual Info: Order this document by MC13145/D MC13145 Low Power Integrated Receiver for ISM Band Applications UHF WIDEBAND RECEIVER SUBSYSTEM LNA, Mixer, VCO, Prescalar, IF Subsystem, Coilless Detector The MC13145 is a dual conversion integrated RF receiver intended for

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