TRANSISTOR A64 Search Results

t416

Abstract: 817 CN
Contextual Info: DISCRETE SEMICONDUCTORS PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 Philips Semiconductors 1999 May 18 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE

SOT223 marking SG

Abstract: MARKING SG SOT223 marking sot223 GY
Contextual Info: DISCRETE SEMICONDUCTORS SHEET PZT4403 PNP switching transistor Product specification Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Product specification PNP switching transistor FEATURES PZT4403 PINNING • High current max. 600 mA PIN

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A

transistor 2222a

Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Contextual Info: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B

Contextual Info: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP Type Marking Ordering Code Pin Configuration SMBTA 42 s1 D Q68000-A6482 1=B 2=E Package

Contextual Info: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1B Q68000-A6481 1=B

Contextual Info: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23

SOT-23 marking AFE

Abstract: marking code AFE CE040
Contextual Info: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinCtonfigu ration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Values Unit

2907a TRANSISTOR PNP

Abstract: 2907a transistor s2f sot-23 marking 2907A symbol TRANSISTOR S2F
Contextual Info: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: S M B T 2222A NPN Type Marking Ordering Code Pin Configuration S M B T 2907A s2F Q68000-A6474

Contextual Info: SIEMENS NPN Silicon AF Transistor SMBTA 20 • High DC current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol

2907A

Abstract: 2907a TRANSISTOR PNP transistor s2f S2F MARKING SOT23 2907a transistor npn 2907A S2F SOT-23 s2F SOT23 PNP 2907a SOT23 Q68000-A6474
Contextual Info: SMBT 2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2222A NPN 2 1 Type Marking Ordering Code Pin Configuration SMBT 2907A s2F 1=B Q68000-A6474 2=E

CE040

Abstract: Q6800-A6477
Contextual Info: NPN Silicon AF Transistor SMBTA 20 High DC current gain ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 20 s1C Q6800-A6477 B SOT-23 E C Maximum Ratings Parameter Symbol Values

TRANSISTOR S2d

Contextual Info: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23

Contextual Info: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary types: SM BTA 92 PNP Type Marking Ordering Code Pin Configuration SM BTA 42 s1D Q 68000-A6482 1 =B 2=E

TRANSISTOR A64

Abstract: RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking SGA-6486 A64 marking amplifier marking A64 amplifier
Contextual Info: Product Description Stanford Microdevices’ SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

RF TRANSISTOR 1.5 GHZ A64

Abstract: MMIC A64 marking A64 marking amplifier
Contextual Info: Product Description Stanford Microdevices’ SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

RF TRANSISTOR 1.5 GHZ A64

Abstract: TRANSISTOR A64 A64 marking amplifier MMIC A64 marking SGA-6489 marking A64 amplifier MMIC transistor tl 187 RF 1.5 GHZ A64 RF TRANSISTOR A64
Contextual Info: Product Description Stanford Microdevices’ SGA-6489 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Jul 21 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification 2PC4617 NPN general purpose transistor FEATURES PINNING • Low curren t max. 100 mA PIN

TRANSISTOR A64

Abstract: MMBT pnp
Contextual Info: MPS A64/MPSW64/MMBT A64 2 3 National Semiconductor MPSW64 MPSA64 MMBTA64 TO- 9 2 T L / G /1 0 1 0 Q - 5 T L / G /1 0 1 0 0 - 1 PNP Darlington Transistor Electrical Characteristics T * = 25‘ C unless otherw ise noted Param eter Sym bol Min Max Units OFF C HA R A C TER ISTIC S

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT PINNING FEATURES • Built-in bias resistor R1 typ. 4.7 k£2

Silicon Bipolar Amplifier A64

Abstract: CATV amplifier transistor SGA-6489 RF TRANSISTOR A64
Contextual Info: Preliminary Product Description SGA-6489 Stanford Microdevices’ SGA-6489 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to

TRANSISTOR A64

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZK FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 and 47 k£2

SGA-6486-TR1

Abstract: sga6486
Contextual Info: Product Description SGA-6486 Stanford M icrodevices’ SG A-6486 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to