TRANSISTOR A5 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2SA1774

Abstract: 2SC4617
Contextual Info: UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 MARKING 2 1 A5 3 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER Collector-Base Voltage

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

DTA143X

Abstract: DTA143XL
Contextual Info: UTC DTA143X PNP DIGITAL TRANSISTOR PNP DIGITAL TRANSISTOR FEATURES * Built-in bias thin film resistors per equivalent circuit * Easy on/off applications 2 1 3 EQUIVALENT CIRCUIT IN MARKING OUT R1 SOT-523 A5X R2 GND + IN OUT 1: GND 2: IN 3: OUT *Pb-free plating product number:DTA143XL

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery

Contextual Info: SANYO SEMI CON DUCTOR LB 1 2 1 3 M! :?«5«*a5S6%e9 15E i "I" 7TÌ7 D 7 t DUJ.hl.lh = | CORP •'P4 S-2.5’ 10 M onolithic Digital 1C 3035A General-Purpose Transistor Array 1354B The LB1213M is a general-purpose transistor array containing 7 channels.

BY206

Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION

programmable unijunction transistor

Abstract: "Programmable Unijunction Transistor" ph a5 transistor
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor

CM2025

Abstract: w65 transistor npn, transistor, sc 109 b T3D 34 BUV11N transistor 3-440
Contextual Info: MOTOROLA SC XSTRS/R F 15E D I b3b?a54 G O û lflâ B 5 I 7 ^ 3 3 MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA NPN SILICON POWER METAL TRANSISTOR . designed for high speed, high current, high power applications. NPN SILICON POWER METAL TRANSISTOR 20 A M P E R E S

Contextual Info: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to

"Programmable Unijunction Transistor"

Abstract: BY206 Programmable Unijunction Transistor transistor K 2333 BZY88C8V2 BZY88C str 6707 equivalent MEA141 BRY61 BRY61 EQUIVALENT
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 21 Philips Semiconductors Product specification Programmable unijunction transistor

D1133

Abstract: transistor D1133 EQUIVALENT number transistor D1133 EQUIVALENT CIRCUIT transistor D1133 7405AN D1133 EQUIVALENT CIRCUIT truth table inverter gate 74 Inverter Gates FJH321 FJH321A
Contextual Info: T.T.L. SEXTUPLE SINGLE INPUT INVERTER GATES FIH 3 2 I FJH3 2 IA Corresponds to 74 Series type 7405AIM P R O V IS IO N A L D A T A These d evices are transistor-transistor logic sextuple single-input inverter gates, with a single-ended open collector output transistor, in the FJ s e r ie s of integrated

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR  FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2SA1774L-x-AE3-R

Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure

10GHz oscillator

Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
Contextual Info: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure

BUK455-60A/B

Abstract: BUK455-60A
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK856-450IX

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener

3004x

Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . FEATURE 3 ● Small collector to emitter saturation voltage.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

marking A5F

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. L2SA1235FLT1G S-L2SA1235FLT1G . FEATURE ● Small collector to emitter saturation voltage.

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

BFU510

Abstract: SiGe POWER TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product specification Supersedes data of 2001 Nov 08 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor BFU510 FEATURES PINNING • Very high power gain