TRANSISTOR A4Y Search Results

A4Y SOT23

Abstract: transistor a4y
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  * * * *  FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION

A4Y SOT23

Abstract: transistor a4y transistor a4g sot113 NF 723
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION 

MARKING A4 transistor

Abstract: A4Y SOT23 sot-23 marking 113 sot323 transistor marking MMBT1015G UTC MMBT1015 MMBT1015 MMBT1815 free transistor transistor a4y
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 Lead-free: MMBT1015L Halogen-free: MMBT1015G

A4Y MARK SOT-23

Abstract: MARK A4B A4Y SOT23 HMBT1015 transistor a4y
Contextual Info: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2004.08.10 Page No. : 1/4 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

transistor a4y

Abstract: A4Y SOT23 HMBT1015
Contextual Info: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

BA2rc

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

p144f

Abstract: TDK EF25 BAP36 PD482
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: MMBT1015W PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 Description A The MMBT1015W is designed for use in driver stage of AF amplifier and general purpose amplification. L 3 1 Top View V B S 2 G COLLECTOR

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

transistor a4y

Abstract: transistor a4g FMBT1015
Contextual Info: PNP Epitaxial Planar Transistor Data Sheet Mechanical Dimensions FMBT1015 Description .110 .060 3 3 .037 2 2 .115 .037 .016 2 3 1 1 1 .043 .016 .004 Maximum Ratings Ratings Collector - Emitter Voltage Symbol VCEO Collector - Base Voltage VCBO -50 V Emitter - Base Voltage

Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

PD48576109,

Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

BA1 K11

Abstract: ba1d1a PD48576118FF-E24-DW1-A
Contextual Info: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

FTF4052M

Abstract: FTF4052 BAS28 BAT74 BG40 03FCG261 transistor a4z A1W diode diode a4W FTF4052C
Contextual Info: IMAGE SENSORS DATA SHEET FTF4052M 22M Full-Frame CCD Image Sensor Preliminary specification DALSA Professional Imaging 2006 October 30 DALSA Professional Imaging Preliminary Specification 22M Full-Frame CCD Image Sensor FTF4052M • 36mm x 48 mm optical size

FTF7040M

Abstract: 74ACT04 BAS28 BG40 ccd application vns Dalsa
Contextual Info: IMAGE SENSORS DATA SHEET FTF7040M in PGA 28M Full-Frame CCD Image Sensor Preliminary product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 28M Full-Frame CCD Image Sensor • 28M active pixels 7168H x 4096V

transistor npn d 2058

Abstract: FTF2020 FT2020M CG1 HOYA ccd application vns FTF2020M CCD IMAGE Dalsa FT202 pnp transistor 9015
Contextual Info: IMAGE SENSORS DATA SHEET FTF2020M 4M Full Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 April 10 DALSA Professional Imaging Product Specification 4M Full-Frame CCD Image Sensor FTF2020M • Image format 24 x 24 mm • 4M active pixels (2048H x 2048V)