TRANSISTOR A45 Search Results

Contextual Info: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

Contextual Info: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

TRANSISTOR BI 187

Abstract: SGA-4586
Contextual Info: Preliminary Product Description SGA-4586 Stanford Microdevices’ SGA-4586 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

marking A45

Abstract: germanium transistor ac 128 SGA-4563 marking A45 RF TRANSISTOR 726
Contextual Info: Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices’ SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: 131,072 WORDS X 8 BIT CMOS PRELIMINARY PSEUDO STATIC RAM DESCRIPTION The TC518128A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518128A-LV Family utilizing one transistor dynamic memory’ cell with CMOS

A45A

Abstract: SO402 2SK386 j2f3 16664
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- ‘H 9097250 TOSHIBA <DISCRETE/OPTO> DE 99D SEMICONDUCTOR I SOTTESO OOlbbba 2 16662 DT_3CH3 TOSHIBA FIELD EFFECT TRANSISTOR 2SK386 SILICON N CHANNEL MOS TYPE TECHNICAL DATA <7T — M O S INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: SANYO SEMICONDUCTOR CORP -r-3 3 2SC3292 2 01 OA NPN Planar Silicon Darlington Transistor Driver Applications i 1332A Use: Especially suited for use in switching of L load motor driver, printer hammer driver, relay driver, etc. Features: • High DC current gain

A45A

Abstract: CEN-A45A CEN-A44 CEN-A45 MPS-A44 MPS-A45 TRANSISTOR A44 TRANSISTOR a45 MPSA44
Contextual Info: CENTRAL nflnb3 oooD3t.a i i ,-p a s - a s SEMICONDUCTOR CEN-A44 CEN-A45 c e n -a 4s a @5{?^L£^¡iíe^e@9e esEsieEñgaB NPN SILICON TRANSISTOR . 'HIGH VOLTAGE € @ g it r ü i JEDEC TO-92 CASE EBC 1 4 5 A d a m s A ve n u e H auppauge, N e w Y o rk 1 1 7 8 8

transistor 123 DL

Abstract: TRANSISTOR 8FB a406 transistor A7N transistor
Contextual Info: AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to provide excellent R DS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Contextual Info: BSS98 In fin e o n t*ehnoiogi*i SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type Vbs BSS98 50 V Type BSS98 BSS98 BSS98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 0.3 A °DS(on) Package

Contextual Info: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures

2SK150

Abstract: 2SK12 2SK15 transistor 2sk 2SK120 2SK11 2SK12-Y 2SK150 A 2SK110 SK 10 BAT 065
Contextual Info: 2 5 ,1 1 5 ' tJ n y n * v % i \ > m 8 i e w i m m ^ y v z & SILICON N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 2 5 ,1 2 - i 2 S K 15 ii it x o is « « « « * o 1 O D C , A C S S A * S !ttlE l« iffl O O ^ O X -1 7 f- •/

2SK19

Abstract: transistor 2sk19 2SK19BL 2SK19-BL transistor 2sk 70 transistor 2sk 220O OAT 3Z transistor kt 301
Contextual Info: 19 2SK o vv * O V H P fci*« « o PM T u n e r ^ IL I C O N N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR +m » - a n d VHP A m p l i f i e r U n it A p p lic a tio n s . * 5 .8 MAX. W iJiU i9 ^ *S ^ > „ i S 3 ^ A t J - f >" ^ : i Ops = ! W * - * s 20dB (T y p . (f= 1 0 0 M H z )

TRANSISTOR a45

Contextual Info: A45/SMA45 1000 TO 4000 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 17.5 dB TYP. · LOW NOISE: 4.5 dB (TYP.) · HIGH OUTPUT POWER: +19.5 dBm (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency

TRANSISTOR a45

Contextual Info: A45/SMA45 1000 TO 4000 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 17.5 dB TYP. · LOW NOISE: 4.5 dB (TYP.) · HIGH OUTPUT POWER: +19.5 dBm (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency

CA45

Abstract: SMA45 TRANSISTOR a45 BGA45
Contextual Info: A45/SMA45 1000 TO 4000 MHz CASCADABLE AMPLIFIER • HIGH GAIN: 17.5 dB TYP. · LOW NOISE: 4.5 dB (TYP.) · HIGH OUTPUT POWER: +19.5 dBm (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency

TRANSISTOR a45

Contextual Info: A45-1/SMA45-1 1000 TO 4000 MHz CASCADABLE AMPLIFIER • WIDE BANDWIDTH · HIGH GAIN 17.5 dB TYP. · LOW NOISE: 4.1 dB (TYP.) · GaAs FET DESIGN Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency Small Signal Gain (min.)

TRANSISTOR a45

Contextual Info: Cascadable Amplifier 1000 to 4000 MHz A45/ SMA45 V3 Features • • • • Product Image HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Description The A45 RF amplifier is a discrete hybrid design, which uses

TRANSISTOR a45

Contextual Info: Cascadable Amplifier 1000 to 4000 MHz A45-1/ SMA45-1 V3 Features • • • • Product Image WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Description The A45-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

CA45

Abstract: SMA45 TRANSISTOR a45
Contextual Info: A45 / SMA45 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Description The A45 RF amplifier is a discrete hybrid design, which uses

SMA45

Abstract: A45-1 CA45-1 SMA45-1 TRANSISTOR a45
Contextual Info: A45-1 / SMA45-1 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Description The A45-1 RF amplifier is a discrete hybrid design, which uses

WJ-CA45-1

Abstract: WJ-CA45 wja45 wj-a45
Contextual Info: WJ-A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Outline Drawings A 45-1 Specifications" Characteristics 0.200 (5.08) Guaranteed

bc 149 transistor

Abstract: atic 144 WJ-CA45-1
Contextual Info: u j J A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN llllillil Outline Drawings A 4 5 -1 0.460 n (11.41) ü Specifications11