TRANSISTOR A3Y Search Results

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

BA2rc

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

ST3403

Contextual Info: P Channel Enchancement Mode MOSFET ST3403 -3.5A DESCRIPTION The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

p144f

Abstract: TDK EF25 BAP36 PD482
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

BA1 K11

Abstract: ba1d1a PD48576118FF-E24-DW1-A
Contextual Info: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

FTF4052M

Abstract: FTF4052 BAS28 BAT74 BG40 03FCG261 transistor a4z A1W diode diode a4W FTF4052C
Contextual Info: IMAGE SENSORS DATA SHEET FTF4052M 22M Full-Frame CCD Image Sensor Preliminary specification DALSA Professional Imaging 2006 October 30 DALSA Professional Imaging Preliminary Specification 22M Full-Frame CCD Image Sensor FTF4052M • 36mm x 48 mm optical size

FTF7040M

Abstract: 74ACT04 BAS28 BG40 ccd application vns Dalsa
Contextual Info: IMAGE SENSORS DATA SHEET FTF7040M in PGA 28M Full-Frame CCD Image Sensor Preliminary product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Preliminary Specification 28M Full-Frame CCD Image Sensor • 28M active pixels 7168H x 4096V

transistor npn d 2058

Abstract: FTF2020 FT2020M CG1 HOYA ccd application vns FTF2020M CCD IMAGE Dalsa FT202 pnp transistor 9015
Contextual Info: IMAGE SENSORS DATA SHEET FTF2020M 4M Full Frame CCD Image Sensor Product specification DALSA Professional Imaging 2007 April 10 DALSA Professional Imaging Product Specification 4M Full-Frame CCD Image Sensor FTF2020M • Image format 24 x 24 mm • 4M active pixels (2048H x 2048V)

ccd color Linear Image Sensor

Abstract: CCD Linear Image Sensor diode a4W FTF5033C 5717 Diode Mark D10 N10 a1w* transistor A1W TRANSISTOR ccd image sensor linear ccd sensor
Contextual Info: IMAGE SENSORS DATA SHEET FTF5033C 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033C 35mm film compatible image format

FTF5033M

Abstract: asp 962 image sensor CCD IMAGE ccd image sensor diode a4W BAS28 BAT74 BC860C BFR92
Contextual Info: IMAGE SENSORS DATA SHEET FTF5033M 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033M 35mm film compatible image format

FTF5066M

Abstract: B688 Transistor TG p10 CCD IMAGE ccd image sensor Dalsa 75151 CCD Linear Image Sensor dalsa cmos diode a4W
Contextual Info: IMAGE SENSORS DATA SHEET FTF5066M 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066M • Image format 36 x 48 mm • 33M active pixels (4992H x 6668V)

FTF4052

Abstract: FTF4027 tp 4056 datasheet Melles Griot amplifier ccd color Linear Image Sensor CCD IMAGE diode a4W tp 4056 a4w 41 A1W TRANSISTOR
Contextual Info: IMAGE SENSORS DATA SHEET FTF4027C 11M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2009 April 24 DALSA Professional Imaging Preliminary Specification 11M Full-Frame CCD Image Sensor FTF4027C • 35mm film compatible image format 36 x 24 mm

a4w transistor

Contextual Info: IMAGE SENSORS DATA SHEET FTF5033C 17M Full-Frame CCD Image Sensor Preliminary Specification DALSA Professional Imaging 2007, March 01 DALSA Professional Imaging Preliminary Specification 17M Full-Frame CCD Image Sensor • FTF5033C 35mm film compatible image format