transistor ac 132
Abstract: MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic fla3019
Contextual Info: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ESC RIPTIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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ja3018ha3018aa3019pa3026+14ma3036a3039ja3045iia3046a3054ja3086transistor ac 132monolithic diode arrays fairchilda3018monolithic diode arraysma3046ua3026hm6 "transistor arrays" icfla3019
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A3054
Abstract: MA3036 MA3046 UA3026HM FAIRCHILD 02L 6 "transistor arrays" ic C3086
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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ja3018ha3018aa3019pa3026+11ma3036a3039ja3045iia3046a3054ja3086ma3046ua3026hmfairchild 02l6 "transistor arrays" icc3086
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A3018
Abstract: MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126
Contextual Info: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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ja3018ha3018aa3019pa3026+14ma3036a3039ja3045iia3046a3054ja3086a3018monolithic diode arraysma3046ua3026hm6 "transistor arrays" icdarlington pair power transistortransistor 1354ss126
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transistor BC 667
Abstract: bc 301 transistor A3026 transistor bc 325 two transistor forward differential pair cascode la3026 transistor differential amplifier MONOLITHIC DIODE ARRAYS MA3036
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FA IR CH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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ja3018ha3018aa3019pa3026+15ma3036a3039ja3045iia3046a3054ja3086transistor bc 667bc 301 transistora3026transistor bc 325two transistor forwarddifferential pair cascodela3026transistor differential amplifiermonolithic diode arrays
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MONOLITHIC DIODE ARRAYS fairchild
Abstract: A3019 pa3026 PA3019 pa3046 jA3018 diode 5D A3019HM A3054 MA3036
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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ja3018ha3018aa3019pa3026+11ma3036a3039ja3045iia3046a3054ja3086monolithic diode arrays fairchildpa3019pa3046diode 5da3019hm
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MONOLITHIC DIODE ARRAYS fairchild
Abstract: MA3046 vp2l DIODE IR 1F A3054 MA3036 UA3026HM MONOLITHIC DIODE ARRAYS
Contextual Info: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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ja3018ha3018aa3019pa3026+12ma3036a3039ja3045iia3046a3054ja3086monolithic diode arrays fairchildma3046vp2ldiode ir 1fua3026hmmonolithic diode arrays
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483
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vp 3082
Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082
Contextual Info: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,
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vp 3082tda3081tda3082tda 3081+6tda 1030signeticstda 26655812gtransistor ittca 3082
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phonograph preamplifiers
Abstract: differential pair cascode darlington fua 3046 dc uA3045 MA3026 MONOLITHIC DIODE ARRAYS fairchild uA3046 darlington pair transistor cd 3054 LA3026
Contextual Info: |jA3018 •MA3018A. [i A3019 •mA3026 •mA3036 MA3039 • JA3045 •mA3046 •mA3054 •mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D L IN E A R IN T E G R A T E D C IR C U IT S G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode A rrays consist o f general purpose integrated circuit devices constructed
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ja3018ma3018aa3019ma3026+15ma3036ma3039ja3045ma3046ma3054ma3086phonograph preamplifiersdifferential pair cascode darlingtonfua 3046 dcua3045monolithic diode arrays fairchildua3046darlington pair transistorcd 3054la3026
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CA3046 RCA
Abstract: ICAN-5296 CA304B CA3046 CA3045 RCA-CA3018 rca CA3046 LLAM CA3045F 92CS-I52I6
Contextual Info: D E | 3fl7SDÛl 0014b0G 5 G E SOLID STATE 01 3875081 G Arrays _ SOLID S T AT E 0 1E 1 4 600 D CA3045, CA3046 General-Purpose N-P-N Transistor Arrays Three Isolated Transistors and One DifferentiallyConnected Transistor Pair For Low-Power Applications at Frequencies
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ca3045ca304692cs-k256h192cs-isi96+8ca3046 rcaican-5296ca304brca-ca3018rca ca3046llamca3045f92cs-i52i6
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DARLINGTON TRANSISTOR ARRAY
Contextual Info: MA3018•MA3018A•MA3019•MA3026•MA3036 MA3039•HA3045•nA3046•mA3054•mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ES C R IP T IO N — Fairch ild Transistor and Diode A rrays consist o f general purpose integrated circu it devices constructed
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ma3018ma3018ama3019ma3026+7ma3036ma3039ha3045na3046ma3054ma3086darlington transistor array
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ca3096
Abstract: thyristor TAG 103 X 2158D 2824FF NPN PNP Transistor Arrays
Contextual Info: CA3096, CA3096A, CA3096C H A R R IS S E M I C O N D U C T O R NPN/PNP Transistor Arrays August 1996 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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ca3096ca3096aca3096cthyristor tag 103 x+32158d2824ffnpn pnp transistor arrays
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CA3084
Abstract: rca transistor transistor Common collector configuration CA3084 transistor common collector npn array CA3081 RCA numitron arrays 5 transistor dip.16 rca power transistor DR2000
Contextual Info: Transistor Arrays General-Purpose High-Current n -p -n Transistor Arrays G CA3081 CA3082 Applications and Features Drivers fo r: 7-segment incandescent displays e.g. RCA N U M IT R O N DR 2000 Series L ig h t-E m ittin g -D io de s (L E D ) displays (e.g. RCA 40736R )
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9zcs-238492cs-2499116-leadca3081+12ca3082dr200040736rca3084rca transistortransistor common collector configurationca3084 transistorcommon collector npn arrayca3081 rcanumitronarrays 5 transistor dip.16rca power transistor
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GP 841 Diode
Abstract: FH2114 A3012
Contextual Info: FH2114 RF Power MOSFET Transistor 75W, 30-90MHz, 24V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device Meets CECOM drawing A3012711 Designed for frequency hopping systems 30-90 MHz
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fh211430-90mhza3012711gp 841 diode+1a3012
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photo transistor array
Abstract: PHOTO TRANSISTOR
Contextual Info: OST-1CL7 PHOTO TRANSISTOR The OST-1CL7 is a high-A30sensitivity NPN silicon phototransistor DIMENSIONS Unit:mm mounted in 3ø ceramic package.The small size and low-cost make it highly suitable for use in detector array and for both private and industrial uses.
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high-a30sensitivity940nmphoto transistor arrayphoto transistor |
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A3012715
Abstract: FH2164
Contextual Info: ;=-=z 7=-z = -= =z an AMP company * = .-= = RF MOSFET Power Transistor, SW, 12V 30 - 90 MHz FH2164 Features l l l l l l N-Channel Enhancement Mode Device Meets CECOM Drawing A3012715 Designed for Frequency Hopping Systems 30-90 MHz Lower Capacitances for Broadband Operation
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k 815 MOSFET
Abstract: FH2164
Contextual Info: FH2164 RF Power MOSFET Transistor 8W, 30-90MHz, 12V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device Meets CECOM drawing A3012715 Designed for frequency hopping systems 30-90 MHz Lower capacitances for broadband operation
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fh216430-90mhza3012715k 815 mosfet |
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alu 74181
Abstract: 25B22 f422 S2 f19
Contextual Info: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),
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cft1812a32-bit74181-typecft1810a+4alu 7418125b22f422s2 f19
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12J60
Abstract: a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I
Contextual Info: m an A M P company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 V2.00 Features ♦ N-Channel Enhancement Mode Device Meets CECOM Drawing A3012711 Designed for Frequency Hopping Systems 30*90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices
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fh2114a3012711vos-3012j60+5j006300v 10 amp n-channel mosfetr750s m r750transistor a4i
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t750
Abstract: ds 300 u810
Contextual Info: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration
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a3012711fh2114t750ds 300+1u810
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transistor j4 ss 88
Contextual Info: an A M P com pany RF MOSFET Power Transistor, 8W, 12V 30 - 90 MHz FH2164 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012715 D esigned for Frequency H opping Systems 30-90 MHz Lower Capacitances for Broadband O peration
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a3012715fh2164transistor j4 ss 88 |
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motorola transistor 7439
Abstract: 741TC TRANSISTOR REPLACEMENT GUIDE sprague transistors MC1304 SN75474 ULN2151D MC1310P 3067 dual transistor motorola transistor array 14 pin dip
Contextual Info: Z ir SPRAGUE TRANSISTOR ARRAYS A New Approach to Design Problem Solving Sprague offers nine monolithic active-device arrays which com bine the performance and versatility of discrete devices with th e inherent reliability and matching of integrated circuits.
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uls-2045huln-2046auln-2047auln-2054a+16uln-2081amc1439gmc1439p1mc1741cgmc1741cp1mc3003motorola transistor 7439741tctransistor replacement guidesprague transistorsmc1304sn75474uln2151dmc1310p3067 dual transistormotorola transistor array 14 pin dip
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Thyristor bst 2
Abstract: CA3082 transistor arrays 5v CA3081 DR2000 40736R CA3081F CA3081M CA3082M CA3082M96
Contextual Info: CA3081, CA3082 CT UCT PRODU E T PROD E E L T O U S IT B SIL O ST -INTER E SU B 8 L 8 8 IB S 1 PO S onsData Sheet om FOR A tral Applicati @in tersil.c p n p e call C mail: centa or e General Purpose High Current NPN Transistor Arrays itle A30 , 308 bt enl rse
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ca3081ca30821-888-i100ma+8thyristor bst 2transistor arrays 5vdr200040736rca3081fca3081mca3082mca3082m96
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