TRANSISTOR A22 Search Results

021B2

Abstract: transistor cbj hmv12 pnp germanium transistor 15bis AFY16 BA RV mesa
Contextual Info: Nicht für N eu entw icklun g PNP-Mesatransistor für HF-Anwendungen bis 900 MHz AFY16 A FY 16 ist ein PNP-Germanium-Transistor in Mesa-Techmk um Gehäuse 18 A 4 DIN 41 876 T O -72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor A FY 16 ist für

AFY16

Abstract: Germanium Transistor 71lb 21b22
Contextual Info: AFY16 PNP Transistor for RF-application up to 900 MHz The A FY 16 is a germanium PNP RF mesa transistor in a case 18 A 4 DIN 41 876 TO-72 . The terminals are electrically insulated from the case. The AFY 16 is designed for use in pre-stages as well as in mixer and oscillator stages up to 900 MHz.

s22b

Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­

transistor A2210

Abstract: ENA0667B 2sa2210 2SA2210-1E
Contextual Info: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes

transistor A2210

Abstract: a2210 2sa2210
Contextual Info: 2SA2210 Ordering number : ENA0667A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes

A22 T transistor

Abstract: RS Components transistor t03
Contextual Info: RS Technical Library T03 Transistor Cover Dimensions RS Stock No 402-131 A22-4015 T 0 3 thin flange 1.375 34 .93 480 ( 12 . 19 ) 00 in oo d m CM RS Components shall not b e liable for any liability or loss of any nature (howsoever caused and whether or not due to RS components' negligence)

transistor A2222

Abstract: a2222 TO-220F-3SG ENA1799A 2SA2222SG SC-67 2SA22
Contextual Info: 2SA2222SG Ordering number : ENA1799A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2222SG High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity IC=-10A

2SA2223A

Abstract: A2223A 2SC6145A SANKEN AUDIO High power audio transistor equivalent table transistor 0882 SANKEN Sanken Transistor Mt 200 SANKEN POWER TRANSISTOR CF35
Contextual Info: 2SA2223A Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve

2SA2223

Abstract: multi emitter transistor transistor 0882 2SA1668A SANKEN AUDIO transistor a2223 2SC6145 SANKEN transistor tip 35c sanken transistor
Contextual Info: 2SA2223 Audio Amplification Transistor Features and Benefits Description ▪ ▪ ▪ ▪ ▪ Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. These PNP power transistors achieve

2SA2210-1E

Abstract: transistor A2210
Contextual Info: Ordering number : ENA0667B 2SA2210 Bipolar Transistor http://onsemi.com –50V, –20A, Low VCE sat PNP TO-220F-3SG Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes Low collector-to-emitter saturation voltage

transistor A2222

Abstract: a2222 2sa2222
Contextual Info: Ordering number : ENA1799B 2SA2222SG Bipolar Transistor –50V, –10A, Low VCE sat PNP TO-220F-3FS http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity (IC=-10A) Adoption of MBIT process

BA2rc

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

K1B2816

Contextual Info: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length

Contextual Info: Product Description SGA-2286 Stanford M icrodevices’ SG A-2286 is a high performance cascadeable 50-ohm am plifier designed for operation from a 2.7-volt supply. This RFIC uses the latest Silicon G erm a­ nium Heterostructure Bipolar Transistor SiGe HBT

rp110n261

Abstract: RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5
Contextual Info: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-131023 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC

transistor d514

Abstract: D515 transistor
Contextual Info: Rev. 1.0, Apr. 2010 K1B5616BFB 256Mb B-die UtRAM 16Mb x16 Synchronous Burst Uni-Transistor CMOS RAM (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

alu 74181

Abstract: 25B22 f422 S2 f19
Contextual Info: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),

K1B3216BDD

Abstract: UtRAM Density
Contextual Info: K1B3216BDD UtRAM Document Title 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target September 02, 2004 Preliminary 0.1 Revised - Corrected the name of 9th row of balls on the pakage to ’J’ from ’I’

CPM1A-MAD01 manual

Abstract: CPM1-CIF01 cpm1-cif11 omron cpm1a-40cdr-a-v1 CPM1A-MAD01 C200H Pro27 OMRON Operation Manual CPM1A-MAD11 c200h-cn320-eu CPM1A-MAD11 manual OMRON CPM1A-30CDR-A-V1 programming manual
Contextual Info: Micro Programmable Controller CPM1A The CPM1A series micro controllers solve both basic and semi-complex applications. The brick style models include DC inputs/transistor or relay outputs to meet your design requirements. The base I/O for the CPUs ranges from 10, 20, 30, and 40 I/O points with

Contextual Info: Preliminary UtRAM K1B3216B7D Document Title 2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft - Design target Remark December 21, 2004 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

K1S2816BCM

Abstract: K1S2816BCM-I
Contextual Info: K1S2816BCM UtRAM Document Title 8Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Preliminary 0.1 Revised July 12, 2004 - Updated "TIMING WAVEFORM OF WRITE CYCLE 1 (WE Controlled)" in page 8 and added tWHP(WE High Pulse Width) parameter

Contextual Info: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.