TRANSISTOR A13 Search Results

A1385

Abstract: A-1385 A1385-Z
Contextual Info: SILICON TRANSISTOR 2 S A 1 3 8 5 -Z PNP SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2S A1385-Z is designed fo r A u d io Frequency A m p lifie r and S w itchin g, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS in millimeters

Transistor A14

Abstract: a14 Transistor MMBTA13LT1 MMBTA14LT1 a13 marking transistor
Contextual Info: MMBTA13LT1/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage

Transistor A14

Abstract: MMBTA14LT1 MMBTA13LT1
Contextual Info: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces

c215a

Abstract: 1902 transistor BTNA13A3 BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C215A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA13A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA63A3. Equivalent Circuit

transistor BD 430

Abstract: 0436L
Contextual Info: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

EM7164SU16

Contextual Info: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision

NPN Transistor BC548B

Abstract: BC548 BC238B npn bc337-40 npn transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB

Q62702-D1070

Abstract: TRANSISTOR D 1785 BD430
Contextual Info: asc D • â23SbOS OüOMBS'i 5 m Z I Z G ■ BD 430 PNP Silicon Planar Transistor ',cr. 0 4 3 5 9 SIEMENS AKTI EN 6E SE LL SCH AF D T -3 3 -/ 7 BD 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in

2N2222A

Abstract: 05G433 OA 60 TRANSISTOR 707 a13707
Contextual Info: L ALLEGRO MICROSYSTEMS INC T3 D 05Q433Ô G003b43 T • T - q i- o / PROCESS BBC Process BBC NPN Small-Signal Transistor The electrical characteristics of selected versions of Process BBC, the NPN counterpart of Sprague Electric’s planar PNP Process BDA transistor, match

NPN Transistor BC548B

Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48
Contextual Info: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA

A1396

Contextual Info: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper­

Contextual Info: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current

TRANSISTOR G13

Abstract: 702 TRANSISTOR npn 13701
Contextual Info: ALLEGRO MICROSYSTEMS INC 13 » • DSDM338 QOOSbMl b B A L 6 R T - ^ l- o i PROCESS BAA Process BAA NPN Small-Signal Transistor This double-diffused, silicon epitaxial planar de­ vice is designed for general-purpose use. Selected versions of the Process BAA NPN transistor find

transistor a13

Abstract: A13 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt­

10 micro farad capacitor

Contextual Info: CY7C199CN Automotive 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 12 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor-transistor logic (TTL) compatible inputs and outputs

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 DD037S3 t> ■ î-91-01 P R O C E S S NJ16 Process NJ16 N-Channel Junction Field-Effect Transistor Process NJ16 is an N-channel junction fieid-effect transistor designed for low-current, general-purpose applications. This process is particularly useful in

Contextual Info: CY7C199CN 256 K 32 K x 8 Static RAM Features General Description [1] • Fast access time: 15 ns and 20 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs

Contextual Info: CY7C199CN 256 K 32 K x 8 Static RAM General Description [1] Features • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Transistor transistor logic (TTL) compatible inputs and outputs

B 773 transistor

Abstract: 2N4403
Contextual Info: ß. ' •- ALLE6R0 MICROSYSTEMS INC T3 D • QS0433ß QQQ3b71 4 ■ AL6R T -9 1-0 1 PROCESS ODA Process DDA PNP Small-Signal Transistor Process DDA is a double-diffused epitaxial planar silicon PNP transistor. It is designed for use as a lownoise, high-gain amplifier or as a medium-power

Transistor A137

Contextual Info: L _ _ ALL E GR O MICROSYSTEMS INC T3 T> • 0 S D M 3 3 Ö D 0 D 3 b 7 7 S I ALGR T-91-01 PROCESS DJC Process DJC PNP Small-Signal Transistor Designed for general-purpose switch and amplifier applications, the Process DJC PN P transistor oper­

transistor a13

Abstract: A13 transistor bma 023 T 427 transistor
Contextual Info: AL LE GR O MICROSYSTEMS INC =J3 D • 0SGM33Ö DÜ03bS7 T ■ ALGR T -V h ö l PROCESS BMA Process BMA PNP High-Voltage Transistor The P N P process B M A transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current

Contextual Info: ALL E GR O MICROSYSTEMS INC T3 D • 05D433Ô 00037SS PR O CESS NJ26 T ■ ALGR T -9 1 -0 1 Process NJ26 N-Channel Junction Field-Effect Transistor Process NJ26 is an N-channel junction field-effect transistor designed for general-purpose amplifier ap­ plications at frequencies of up to 450 MHz.

05G433

Contextual Info: A L L E GR O M C R O S Y S T E M S INC S3 » • 05Ü4338 OODSbbS HALGR T - ^ l- o l PROCESS BXE Process BXE PNP Small-Signal Transistor Process BXE is a double-diffused PNP epitaxial planar silicon transistor designed for use in generalpurpose amplifier and switching applications. Its