TRANSISTOR A10 Search Results

transistor A1012

Abstract: a1012 transistor UTC A1012 A1012
Contextual Info: UTC A1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNPEPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for silicon current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(MAX.) at Ic=-3A *High speed switching time Tstg=1.0us(Typ.)

a1012 transistor

Abstract: transistor A1012 a1012 a1012* transistor
Contextual Info: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)

Contextual Info: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)

Contextual Info: S P R A G U E /S E N IC O N D GROUP 85 14 0 1 9 SPRAGUE. - ^ D • S E M I C O N D S / ICS fiS13Û S 0 D 0C I3flD 7^ 93D 03807 3 SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O PRAGUE SERIES TPQ quad transistor arrays ^ are general-purpose silicon transistor arrays

2N2222A plastic package

Abstract: TPQ2907A transistor 2n2222A plastic package NPN transistor 2n2222A plastic package 2n2222a plastic tpq3904
Contextual Info: QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: QUAD TRANSISTOR ARRAYS Series T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • DSG433A 0GQb4Q3 flb2 ■ AL6R SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic

TPQ2222

Abstract: TPQ6700 tpq2369 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ2907A TPQ6002
Contextual Info: ALLEGRO MICROSYSTEMS INC , 33E 0504330 0005713 mmÊm• 4 SLGR 'T -m v z ^ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic

transistor 2N 3904

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. Th e molded package is identical to that used with most

2SA1020L UTC

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

DSP56300

Abstract: DSP56303 G38-87 AA0482
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or

Response AA0482

Abstract: AA0463 AA0470 AA0482 284 278 DSP56300 DSP56302 G38-87 AA-0481 AA0460
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56302 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56302 specifications are preliminary and are from design simulations, and may not be fully tested or

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

Response AA0482

Abstract: 49/Response AA0482
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this

itt 3906

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
Contextual Info: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.

EM7164SU16

Contextual Info: Preliminary merging Memory & Logic Solutions Inc. EM7164SU16 Series 1Mx16 Single Transistor RAM Document Title 1M x 16 bit Single Transistor RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Jul. 11 , 2005 Preliminary 0.1 1’st Revision

T6661

Abstract: MMFT6661T1 MMFT6661 MARKING WAW B8 SOT223 T6661 SOT-223
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MMH6661T1/D DATA — — Medium Power Field Effect Transistor MMFT6661TI MotorolaPreferred Devise N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount This TMOS medium power field effect transistor is designed for

Contextual Info: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network

2n390g

Abstract: 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor 2n2222 TPQ6502 2N3799 2N2906 NPN Transistor TPQ6700
Contextual Info: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine N PN /PN P dual complementary pairs.

L1207

Abstract: 2sk2482
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2482 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE D IM E N SIO N S The2SK2482 is N-Channel MOS Field Effect Transistor designed in m illim eter for high voltage switching applications. FEATURES

Contextual Info: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. Low voltage drop at high currents Industry standard TO-252 (D-Pak) package

tpq2907

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays

transistor a1042

Abstract: A1042 K A1042 2SC2431 FUJITSU 2SC2431 2SA1042
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - 2SA1041,2SA1042,2SC2431, 2SC2432 Silicon High Speed Power Transistor DESCRIPTION This series are silicon PNP/NPN planer general purpose, high pow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor R E T tech­