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    TRANSISTOR A 940 Search Results

    TRANSISTOR A 940 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR A 940 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC5005

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the


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    2SC5005 2SC5005 PDF

    NEC JAPAN 282 110 01

    Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
    Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    2SC4570 2SC4570 SC-70) 2SC4570-T1 NEC JAPAN 282 110 01 NEC 2561 TYP 513 309 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261 PDF

    250 B 340 smd Transistor

    Abstract: smd JH transistor BLA0912-250 T491D476M020AS
    Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


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    BLA0912-250 OT502A 103itions 250 B 340 smd Transistor smd JH transistor BLA0912-250 T491D476M020AS PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    LA 7693

    Abstract: ic CD 4047 7737 transistor
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain


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    2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor PDF

    Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2932 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC2932 is a silicon NPN epitaxial planar type transistor spe­ cifically designed fo r power amplifiers applications in 8 0 0 — 9 4 0 MHz UHF band. OUTLINE DRAWING D im e n sio n s in m m


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    2SC2932 2SC2932 900MHz, 900MHz. PDF

    transistor 65 C 3549

    Abstract: linear amplifier P1dB 36dBm
    Contextual Info: Stanford Microdevices Product Description SNA-676 Stanford Microdevices' SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6,5


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    SNA-676 18dBm SNA-600) -676-TR1 -676-TR2 SNA-676-TR3 transistor 65 C 3549 linear amplifier P1dB 36dBm PDF

    DG-211V

    Contextual Info: Photointerrupters Transmissive KODENSHI DG-211V DIMENSIONS (Unit : mm) The DG–211V carrying a unique hysteresis transistor (BAMBIT)developed by KODENSHI CORP.facililates digital output by means of two leads. FEATURES •DIGITAL OUTPUT : directly connect to a microcomputer


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    DG-211V DG-211V PDF

    Contextual Info: Preliminary Preliminary Product Description NGA-489 Stanford Microdevices’ NGA-489 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for


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    NGA-489 NGA-489 39dBm 31mil EDS-100375 PDF

    LED photo darlington transistor IC PACKAGE

    Abstract: PHOTO TRANSISTOR Rise time of photo transistor "photo transistor" transistor AS 337 OC701
    Contextual Info: O K I electronic components OC701 PHOTO COUPLER GENERAL DESCRIPTION The OC701 is a photocoupler formed by combining a GaAs infrared light emitting diode as the input element, and a silicon photo Darlington transistor as an output element. Eencased in a 6-pin plastic


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    QC701_ OC701 E86831 2424D OC701 2424o LED photo darlington transistor IC PACKAGE PHOTO TRANSISTOR Rise time of photo transistor "photo transistor" transistor AS 337 PDF

    M9409

    Abstract: transistor 342 G motorola 2N5643
    Contextual Info: MOTOROLA SC XST RS/ R F 4bE D L3 b 7 2 S4 OGIMÜTE 2 MOTOROLA . ' P - 3 3 " 11 • S E M IC O N D U C T O R TECHNICAL DATA 2N5643 The RF Line 40 W - 175 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR designed p rim a rily fo r w id e b a n d large-signal a m p lifie r stages in


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    2N5643 M9409 transistor 342 G motorola 2N5643 PDF

    CNY70

    Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •


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    CNY70 CNY70 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: differential pair cascode Monolithic Transistor Pair ALD1101 ALD1102 ALD1103 Dual N-Channel MOSFET dip package CMOS differential amplifier cascode
    Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These


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    ALD1103 ALD1103 ALD1101 ALD1102 ALD1103) 5V GATE TO SOURCE VOLTAGE MOSFET differential pair cascode Monolithic Transistor Pair Dual N-Channel MOSFET dip package CMOS differential amplifier cascode PDF

    ALD1115PAL

    Abstract: ALD1115 PAL 0007 E MOSFET cascode mosfet switching
    Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1115 COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET GENERAL DESCRIPTION APPLICATIONS The ALD1115 is a monolithic complementary N-channel and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear


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    ALD1115 ALD1115 ALD1105. cap45° ALD1115PAL PAL 0007 E MOSFET cascode mosfet switching PDF

    ALD1105PBL

    Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
    Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1105 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1105 is a monolithic dual N-channel and dual P-channel complementary matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are


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    ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. CERDIP-14 ALD1105PBL inverter 4v to 12v n channel mosfet 500 mA 400 v PDF

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: n channel mosfet 500 mA 400 v ALD1106 Mosfet Array 15 pin current mirror cascode differential pair cascode ALD1107 ALD1116 ALD1117 ALD1117PA
    Contextual Info: ADVANCED LINEAR DEVICES, INC. ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS The ALD1107/ALD1117 are monolithic quad/dual P-channel enhancement mode matched MOSFET transistor arrays intended for a broad range


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    ALD1107/ALD1117 ALD1107/ALD1117 ALD1107 ALD1117 ALD1106 ALD1116 5V GATE TO SOURCE VOLTAGE MOSFET n channel mosfet 500 mA 400 v ALD1106 Mosfet Array 15 pin current mirror cascode differential pair cascode ALD1107 ALD1116 ALD1117 ALD1117PA PDF

    Xa2 TRANSISTOR

    Abstract: SXH-189 AN023
    Contextual Info: Preliminary Preliminary Product Description Stanford Microdevices’ SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth


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    SXH-189 SXH-189 EDS-101247 Xa2 TRANSISTOR AN023 PDF

    ze 003 driver

    Abstract: SXA-289-TR1 ze 003 SXA-289
    Contextual Info: Preliminary Product Description SXA-289 Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which


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    SXA-289 SXA-289 EDS-100622 ze 003 driver SXA-289-TR1 ze 003 PDF

    Contextual Info: VP5206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP5206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    VP5206 VP5206 DSFP-VP5206 NR071508 PDF

    Contextual Info: TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN0702 130pF DSFP-TN0702 A091208 PDF

    Contextual Info: VN5210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN5210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


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    VN5210 VN5210 DSFP-VN5210 NR071508 PDF

    Contextual Info: S V IS llK A S V l -48V to + 5V O utput S w itch in g DC-DC C otnrm ter The MAX650 is a low-power fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. Alt control functions and a 120V, 250mA PNP transistor are contained in this device, re­


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    MAX650 250mA PDF

    2SK3574

    Abstract: 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET ★ ORDERING INFORMATION DESCRIPTION The 2SK3574 is N-channel MOS FET device that PART NUMBER features a low on-state resistance and excellent switching characteristics, designed for low voltage high current


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    2SK3574 2SK3574 O-220AB 2SK3574-S O-262 2SK3574-ZK O-263 2SK3574-Z O-220SMDNote 2SK3574-S 2SK3574-Z 2SK3574-ZK MP-25 MP-25Z PDF

    NE42484C

    Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
    Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


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    NE42484C NE42484C 42484C E42484C-SL NE42484C-T1 transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET PDF