TRANSISTOR A 7P Search Results

MUN5211DW1T1

Abstract: MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5237DW1T1
Contextual Info: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

THEREMIN

Abstract: NSBC113EDXV6T1 NSBC114TDXV6T1 NSBC114EDXV6T1 NSBC114EDXV6T5 NSBC114YDXV6T1 NSBC123EDXV6T1 NSBC124EDXV6T1 NSBC143TDXV6T1 NSBC144EDXV6T1
Contextual Info: NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

sot363 marking code 385

Abstract: SOT 363 marking 67 MUN5211DW1T1 MUN5211DW1T1G MUN5212DW1T1 MUN5212DW1T1G MUN5213DW1T1 MUN5213DW1T1G MUN5214DW1T1 MUN5214DW1T1G
Contextual Info: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

NSBC143EDXV6

Abstract: NSBC113EDXV6T1
Contextual Info: NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

SOT-363 marking 7a

Abstract: sot363 marking 02 SOT-363 marking 22 SOT-363 marking 187 SOT363 marking 49 marking 7A 7L Marking MUN5235DW1T1 marking 7k sot363 MUN5237DW1T1
Contextual Info: MUN5211DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

Contextual Info: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base

SMUN5211DW1T1G

Abstract: SMUN5235DW1T1G SMUN5214DW1T1G NSVMUN5212 MUN5214DW1T1G SMUN5233DW1T1G MUN5211DW1T1G MUN5233DW1T1G
Contextual Info: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base

NSBC113EDXV6T1

Contextual Info: NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

TRANSISTOR D 1785

Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

LMUN5213DW1T3G

Abstract: SOT-363
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN52xxDW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These

SOT363 MARKING CODE 7M

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5211DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These

LMUN5213DW1T3G

Abstract: SOT-363 marking 05 sot363 marking 02 LMUN5211DW1T3G SOT-363 marking 22 sot-363 material marking 20 sot363 dual npn sot-363 sot-363 Package material LMUN5211DW1T1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN52xxDW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5211DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These

transistor marking 7D

Abstract: MUN5214DW1T1G SMUN5213DW1T1G transistor marking code 7e SOT363 MARKING CODE 7M SMUN5235DW1T1G
Contextual Info: MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with

TRANSISTOR 1015A

Contextual Info: GaAÄAs IRED & PHOTO-IC TLP557 T E N TATIVE DATA TRANSISTOR INVERTOR INVERTER FOR AIR CONDITIONOR POWER TRANSISTOR BASE DRIVE The Tosh i b a TLP557 consists of a GaA£As light emitting diode and a integrated photodetector. This unit is 8-lead D I F package.

TLP557

Abstract: 10C4 E67349
Contextual Info: TLP557 TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC TLP557 Transistor Invertor Inverter For Air Conditionor Power Transistor Base Drive Unit in mm The TOSHIBA TLP557 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8−lead DIP package.

XS 630 B

Abstract: ic smd a 1712 THN5602F NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566
Contextual Info: THN5602F SOT-89 NPN SiGe RF POWER TRANSISTOR The THN5602F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor 4 encapsulated in a plastic SOT-89 SMD package. The THN5602F can be used as a driver device or an output device, depending on the specific application.

2SC1967

Abstract: mitsubishi RF POWER TRANSISTOR RF POWER TRANSISTOR 470-MHz
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1967 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1967 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm for RF power amplifiers on U H F band mobile radio applications. FEATURES

transistor D 5024

Abstract: RD00HVS1 8582
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD00HVS1

Abstract: transistor 5024 transistor D 5024 TRANSISTOR 7916
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD00HVS1

Abstract: RF Transistor s-parameter vhf T113 RD00HVS1-101
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD07MVS1

Abstract: transistor t06 19 transistor t06 RF Transistor s-parameter 501 mosfet transistor transistor 5508
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

100OHM

Abstract: RD30HUF1 IDQ10
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.