TRANSISTOR A 2601 Search Results

BFG198

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a

BUJ103AX

Abstract: BP317 BU1706AX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

BP317

Abstract: BU1706AX BUJ204AX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

BUJ204A

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

str 6707

Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.

transistor BUJ100

Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
Contextual Info: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V

7430 ic data sheet

Abstract: BD131 2108 npn transistor bd131 equivalent BD132 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A

jedec package TO-236AB

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT591A PNP BISS transistor Product specification Supersedes data of 1999 Aug 04 2001 Jun 11 Philips Semiconductors Product specification PNP BISS transistor PMMT591A FEATURES PINNING • High current max. 1 A

BD231

Abstract: k 2134 transistor BD230 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD231 PNP power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 21 Philips Semiconductors Product specification PNP power transistor BD231 FEATURES PINNING • High current max. 1.5 A

npn, transistor, sc 107 b

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR52 NPN Darlington transistor Product specification Supersedes data of 1997 May 12 1999 Apr 26 Philips Semiconductors Product specification NPN Darlington transistor BSR52 FEATURES PINNING • High current max. 1 A

MMCM2369

Abstract: MMCM930 MMT2222 MMT2369 MMT2484
Contextual Info: MMT2222 SILICON MICRO-T NPN SILICON SWITCHING TRANSISTOR NPN SILICON ANNULAR TRANSISTOR . . . designed for high-speed switching circuits and D C to V H F am plifier applications. Space Saving Micro-Miniature Package High D C Current G ain Range — lC Specified from 1.0 m A to 300 m A

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of 1997 Mar 12 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A

philips e3

Abstract: BP317 BU506 BU506D BU508D
Contextual Info: DISCRETE SEMICONDUCTORS Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode.

bd139 equivalent transistor

Abstract: Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS
Contextual Info: APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 Philips Semiconductors A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 TRANSISTOR DESCRIPTION

BFG425W

Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
Contextual Info: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power

PH4025L

Contextual Info: PH4025L N-channel TrenchMOS logic level FET Rev. 01 — 22 August 2007 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features

l14 254

Abstract: AN98017 transistor 935 SMD AL SMD transistor 821 ceramic capacitor Philips 2222-581 TRANSISTOR SMD catalog AN98019 AN98026 BLV904
Contextual Info: APPLICATION NOTE 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz AN98019 Philips Semiconductors 5 W Class-AB Amplifier with the BLV904 for 935 − 960 MHz Application Note AN98019 INTRODUCTION This application note contains information on a 5 W class-AB amplifier based on the SMD transistor BLV904. The

sw 2604 ic

Abstract: ic sw 2604 sw 2604 SW 2596 AF 2596 ATC 2603 2sc2592 138B 2SA1112 transistor C 2615
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: DATA SHEET PHOTOCOUPLER PS2601 ,PS2602,PS2601 L,PS2602L HIGH ISOLATION VOLTAGE 6-PIN PHOTOCOUPLER -N E P O C S eries DESCRIPTION T he P S 2601, P S 2602, P S 2601L, P S 2 6 0 2 L are o p tica lly co u p le d Isolators co n ta in in g a G a A s light em ittin g diod e

Contextual Info: ISOCon COMPONE NTS LTD 4 8 8 6 5 1 0 ISOCOM INC 7SC D • MfifibSlO DQDQlOt SST ■ 75C 0 0 1 0 6 ICPL 2601 ISO 0 7 = - V / - B3 High CMR,High Speed Opto Isolator FEATURES LS T T L/T T L Compatible High Speed Low Input Current Required Guaranteed Performance Over Temperature

BRY39

Abstract: Programmable Unijunction Transistor "Programmable Unijunction Transistor" transistor equivalent k 2134 transistor unijunction application note BRY39 application data BRY39 circuit DK 51* transistor unijunction transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D082 BRY39 Programmable unijunction transistor/ Silicon controlled switch Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 24 Philips Semiconductors Product specification

Infrared object counter circuit

Abstract: rs 306-061 306-061 304-560 object counter 307-913 INFRARED OBJECT COUNTER rs 301-606 reflective opto switch kodak counter
Contextual Info: Issued March 1997 232-2447 Data Pack F Reflective and slotted opto switches 2601 Data Sheet Gallium Arsenide infra-red emitting diodes and spectrally matched detectors housed in moulded packages mechanically designed to enable sensing in a variety of applications, i.e. limit switching,

Contextual Info: TLP2601 GaA4 As IRED a PHOTO-IC ISOLATED LINE RECEIVER Unit in m m SIMPLEX/MULTIPLEX DATA TRANSMISSION COMPUTER-PERIPHERAL INTERFACE MICROPROCESSOR SYSTEM INTERFACE DIGITAL ISOLATION FOR A/D, D/A CONVERSION DIRECT REPLACEMENT FOR HCPL-2601 The TOSHIBA TLP2601 is a photocoupler which combines a

"MARKING TE" US6

Abstract: 2301 mini transistor
Contextual Info: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment