TRANSISTOR A 1106 Search Results
TRANSISTOR A 1106 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLA1011-2 |
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Avionics LDMOS transistor |
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RX1214B300YI |
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RX1214B300Y - Microwave Power Transistor |
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CA3127MZ |
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CA3127 - Transistor Array |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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TRANSISTOR A 1106 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
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Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable |
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PHP3N50E PHX2N60E | |
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP3N50E GENERAL DESCRIPTION PHX2N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high |
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PHP3N50E PHX2N60E OT186A | |
ld2scContextual Info: Philips Semiconductors Product specification TrenchWIOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has |
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BUK9514-55 T0220AB ld2sc | |
equivalent transistor TT 3034
Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
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-335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718 | |
transistor c1945
Abstract: C1945 c1946 A 2531 IC A 2531 transistor c1946 Insulation25 C1949 transformer
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HCPL-2530 HCPL-2531 HCPL-2530/31 CMR--10 insulation--2500 C1952 transistor c1945 C1945 c1946 A 2531 IC A 2531 transistor c1946 Insulation25 C1949 transformer | |
d1106
Abstract: LD1116 LD 1106
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ALD1106/ALD1116 1106/A 106/A 106/ALD1116 d1106 LD1116 LD 1106 | |
A933
Abstract: A933 S BA7626F BA7626FS SSOP-A16 a933 transistor
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BA7626F BA7626FS 11066EAT01 BA7626F/FS R1120A A933 A933 S BA7626FS SSOP-A16 a933 transistor | |
R5524N004A
Abstract: RL56 R5524N R5524
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R5524N EA-188-110622 Room403, Room109, 10F-1, R5524N004A RL56 R5524 | |
CNY70Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • • |
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CNY70 CNY70 2002/95/EC 2002/96/EC 18-Jul-08 | |
sensor cny70
Abstract: CNY70 ir sensing circuit using CNY70
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CNY70 CNY70 2002/95/EC 2002/96/EC 08-Apr-05 sensor cny70 ir sensing circuit using CNY70 | |
Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • • |
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CNY70 CNY70 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area CNY70, a compact reflective optical sensor incudes IR-Emitter and Phototransistor with daylight suppression filter. Recommended range of operation is from |
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CNY70 CNY70, 2002/95/EC 2002/96/EC 08-Apr-05 | |
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ALD1105PBL
Abstract: ALD1105 inverter 4v to 12v n channel mosfet 500 mA 400 v
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ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. CERDIP-14 ALD1105PBL inverter 4v to 12v n channel mosfet 500 mA 400 v | |
5V GATE TO SOURCE VOLTAGE MOSFET
Abstract: cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 ALD1105 ALD1116 ALD1117 differential pair cascode CMOS differential amplifier cascode
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ALD1105 ALD1105 ALD1116 ALD1117 ALD1103. 5V GATE TO SOURCE VOLTAGE MOSFET cascode mosfet current mirror Monolithic Transistor Pair mosfet pair ALD1103 differential pair cascode CMOS differential amplifier cascode | |
ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
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CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 | |
PMV31XN
Abstract: C3137
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PMV31XN PMV31XN MSB003 MBB076 C3137 | |
2103FContextual Info: T O SH IB A RN2101 F~RN2106F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101F, RN2102F, RN2103F RN2104F, RN2105F, RN2106F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • With Built-in B ias Resistors • |
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RN2101 RN2106F RN2101F, RN2102F, RN2103F RN2104F, RN2105F, 1101F 1106F 2103F | |
gs 1117 ax
Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
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ALD1107/ALD1117 1107/ALD 107/A ALD1106 ALD1106 1107/A ALD1101 LD1102 LD1103) gs 1117 ax 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117 | |
GG3C
Abstract: NDP405A cq 532 stablizer circuit diagram NDP405B NDP406A NDP406B NDP405 110981
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NDP405A/NDP405B, NDP406A/NDP406B 0V-00) GG3C NDP405A cq 532 stablizer circuit diagram NDP405B NDP406A NDP406B NDP405 110981 | |
HD66310T
Abstract: lcd 8x2 supply voltage 3.3 volt
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66310T HD66310T00) HD66310T0015) HD66310T HD66310T lcd 8x2 supply voltage 3.3 volt | |
N1106Contextual Info: TOSHIBA RN1101-RN1106 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 1 .6 Í 02 0.8 ± 0.1 "O oo +I • |
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RN1101-RN1106 RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 RN2101 RN2106 RN1101 N1106 | |
2SK3265Contextual Info: T O S H IB A 2SK3265 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK3265 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • |
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2SK3265 2SK3265 |