TRANSISTOR A 1102 Search Results

TM1102

Abstract: S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF
Contextual Info: Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 FEATURES DESCRIPTION • Low output capacitance Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. • Fast switching time

transistor K 1096

Abstract: BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711DÛ2L OObBS'H =134 ■ PHIN 11 BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 13,5 V . The transistor is resistance stabilized

transistor rf cm 1104

Abstract: BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971
Contextual Info: 11 PHILIPS INTERNATIONAL MAINTENANCE TYPE 711DÛ2b DQS7TÌ3 3 E IPHIN 41E D BLY92A T -3 3 -0 9 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage o f 28 V. The transistor Is resistance stabilized and

J2735

Abstract: DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414
Contextual Info: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W

Contextual Info: P e BC857 SEMICONDUCTOR FORW ARD INTERNATIONAL ELECTRONICS LTD, PNP EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS a tT a iriM !5°C Symbol Rating Characteristic Unit Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: Philips Semiconductors Objective specification PowerMQS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION PHX2N40E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL field-effect power transistor in a full pack, plastic envelope featuring high

Contextual Info: BC108 SEMICONDUCTOR FORWARD INTERNATIONAL BLECIRONKS LTD. NPN EPITAXIAL SILICON TRANSISTOR ~~ TECHNICAL DATA GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t Tamb=25°C Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Bnitter-Base Voltage

transistor rf cm 1104

Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
Contextual Info: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

Contextual Info: BC107 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. " " TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS a t TanJj=25°C C haracteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage

marking B3A sot23-5

Contextual Info: BC856S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: SOT-23 ♦Com plem ent to BC846S ABSOLUTE MAXIMUM RATINGS a t Tflmb=1is r c _ C haracteristic Symbol Rating

TM 69

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope using ’trench' technology. The device features very low on-state resistance and has

Contextual Info: BC856 SEMICONDUCTOR FORWARD INTERNATIONA! ELECTRONICS LID. _ TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS at Tan*=25°C C h a ra c te ristic Sym bol Rating » U nit i * C ollector-B ase V oltage

transistor c1945

Abstract: C1945 c1946 A 2531 IC A 2531 transistor c1946 Insulation25 C1949 transformer
Contextual Info: mm QUALITY • [ techn o lo g ies DUAL HIGH-SPEED TRANSISTOR OPTOCOUPLERS HCPL-2530 HCPL-2531 PACKAGE DIMENSIONS DESCRIPTIOI The HCPL-2530/31 dual optocouplers contain two completely separated 700 nm GaAsP LED emitters each optically coupled to a high speed photodetector transistor.

Contextual Info: CA3146, CA3146A, CA3183, CA3183A Semiconductor September 1998 File Number High-Voltage Transistor Arrays Features T h e C A 3 1 4 6 A , C A 3 1 4 6 , C A 3 1 8 3 A , and C A 3 1 8 3 are g en eral • M atc h e d G e n e ra l P u rp o s e Transistors p urpo se high voltage silicon N P N transistor arrays on a

transistor mpsu45

Abstract: MPSU45 MPS-U45 MPSU95 TRANSISTOR 2SC Audio Amplifier Applications MPS-U95 MPSU-45 MPSU45 transistor Darlington pair IC with 15 Amp mps a70 pnp transistor
Contextual Info: MPS-U45 SILICON NPN SILICON DARLINGTON TRANSISTOR NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR . . designed fo r a m plifier and driver applications. • High DC C urrent Gain hpE = 25,000 (Min) @ l c = 200 mAdc 15,000 (Min) @ lc = 500 mAdc • C ollector-E m itter Breakdown Voltage —

BLF888B

Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
Contextual Info: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

smd transistor l31

Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

smd transistor L33

Abstract: transistor smd l33 SMD l33 Transistor
Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

BLF888A

Abstract: SMD l33 Transistor smd transistor L33 dvb-t2 ST EZ 711 253 BLF888AS smd transistor l32 UT-090C-25 L33 SMD transistor smd l33
Contextual Info: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Contextual Info: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly